Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions

Latest revision as of 14:08, 31 January 2023

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Phosphorus Pre-dep furnace (A4)

The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl₃.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Phosphorus Pre-dep furnace (A4)

Process knowledge

Dope with Phosphorus

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

Purpose		Phosphorus doping/pre-deposition using POCl₃
Process parameter range	Process Temperature	900-1150 ^oC
	Process pressure	1 atm (atmospheric pressure)
	Gasses on the system	POCl₃ N₂
Substrates	Batch size	1-30 100 mm wafers
Substrates	Substrate materials allowed	Silicon wafers (RCA cleaned)

@@ Line 1: / Line 1: @@
-==A4 Furnace Phosphor pre-dep==
+'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace click here]'''
-[[Image:C4helstak.jpg|thumb|300x300px|A1 Boron drive in furnace: positioned in cleanroom 2]]
-A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula POCL3.
+''This page is written by DTU Nanolab  internal''
+[[Category: Equipment |Thermal A4]]
+[[Category: Thermal process|Furnace]]
+[[Category: Furnaces|A4]]
-A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
+==Phosphorus Pre-dep furnace (A4)==
+[[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]
-==Overview of the performance of the Phosphor pre-dep furnace and some process related parameters==
+The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.
-{| border="2" cellspacing="0" cellpadding="10"
+A4 is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.
-|-
-!style="background:silver; color:black;" align="left"|Purpose
-|style="background:LightGrey; color:black"|Doping of Phosphor
+'''The user manual, technical information and contact information can be found in LabManager:'''
-|style="background:WhiteSmoke; color:black"|
+'''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=83 Phosphorus Pre-dep furnace (A4)]'''
+== Process knowledge ==
+*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]]
+==Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="2"
 |-
-!style="background:silver; color:black" align="left"|Performance
+!style="background:silver; color:black;" align="center"|Purpose
 |style="background:LightGrey; color:black"|
 |style="background:WhiteSmoke; color:black"|
-*
+*Phosphorus doping/pre-deposition using POCl<sub>3</sub>
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
@@ Line 27: / Line 37: @@
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*1 atm (atmospheric pressure)
 |-
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*POCL<sub>3</sub>
+*POCl<sub>3</sub>
+*N<sub>2</sub>
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 4" wafer (or 2" wafers) per run
+*1-30 100 mm wafers
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+*Silicon wafers (RCA cleaned)
-*In doubt: look at the cross contamination sheet or ask one from the furnace team
 |-
-| style="background:LightGrey; color:black"|Material NOT allowed
-|style="background:WhiteSmoke; color:black"|
-*wafers must NOT have been exposed to metal prior to A4
-*wafers must NOT have been stored in dirty boxes (i.e. boxes that has contained wafers with metal)
-|-
 |}