Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

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==A rough overview of the performance of PECVD thin films and some process related parameters==
==Overview of the performance of PECVD thin films and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Deposition of dielectrica |
|style="background:LightGrey; color:black"|Deposition of dielectrica  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon oxide
*Silicon oxide
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|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
*~10nm - 30µm
*~10nm - 30µm
|-
|-
|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Index of refraction||style="background:WhiteSmoke; color:black"|
|style="background:silver; color:black" |
|style="background:LightGrey; color:black"|Index of refraction
|style="background:WhiteSmoke; color:black"|
*~1.4-2.1
*~1.4-2.1
|-
|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage
|style="background:silver; color:black"|
|style="background:LightGrey; color:black"|Step coverage
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*In general: Not so good
*In general: Not so good
*PBSG: Floats at 1000<sup>o</sup>C
*PBSG: Floats at 1000<sup>o</sup>C
|-
|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Film quality
|style="background:silver; color:black"|
|style="background:LightGrey; color:black"|Film quality
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Not so dense film
*Not so dense film
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*300 <sup>o</sup>C
*300 <sup>o</sup>C
|-
|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
|style="background:silver; color:black"|
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~200-900 mTorr
*~200-900 mTorr
|-
|-
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
|style="background:silver; color:black"|
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SiH<math>_4</math>:0-60 sccm
*SiH<math>_4</math>:0-60 sccm
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*Deposition on one side of the substrate
*Deposition on one side of the substrate
|-
|-
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:silver; color:black"|
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
*Silicon wafers
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*Quartz wafers  
*Quartz wafers  
|-  
|-  
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:silver; color:black"|
| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Aluminium
*Aluminium

Revision as of 14:09, 7 May 2008

PECVD Plasma Enhanced Chemical Vapor Deposition

PECVD1 (part of cluster1) - positioned in cleanroom2
PECVD3 - positioned in cleanroom1

We have three PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD1 and PECVD3 are used for silicon based processing where as PECVD2 is dedicated deposition on III-V materials. PECVD1 is the cleanest system where as PECVD3 is allowed to use with substrates with small abouts of metal on. See the precise rules in the equipment manuals which are uploaded in LabManager.

PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.

All though PECVD1, 2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the same exact same result.

Recipes on PECVD1 and PECVD3


Overview of the performance of PECVD thin films and some process related parameters

Purpose Deposition of dielectrica
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
  • PBSG (Phosphorous Boron doped Silica Glass)
  • Silicon oxide doped with Germanium
Performance Film thickness
  • ~10nm - 30µm
Index of refraction
  • ~1.4-2.1
Step coverage
  • In general: Not so good
  • PBSG: Floats at 1000oC
Film quality
  • Not so dense film
  • Hydrogen will be incorporated in the films
Process parameter range Process Temperature
  • 300 oC
Process pressure
  • ~200-900 mTorr
Gas flows
  • SiH:0-60 sccm
  • NO:0-3000 sccm
  • NH:0-1000 sccm
  • N:0-3000 sccm
  • GeH:0-6.00 sccm
  • 5%PH:0-99 sccm
  • 5%BH:0-1000 sccm
Substrates Batch size
  • 1-3 4" wafer per run
  • 1 6" wafer per run
  • Or several smaler pieces
  • Deposition on one side of the substrate
Substrate material allowed
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Material allowed on the substrate
  • Aluminium
  • All metals < 5% of the substrate coverage (ONLY PECVD3!)