Specific Process Knowledge/Lithography/Coaters: Difference between revisions

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Revision as of 09:13, 23 April 2015

Coaters: Comparison Table


Equipment SSE Spinner KS Spinner Spin Track 1 + 2 Manual Spinner (Polymers) Manual Spinner 1 Spin coater: Manual labspin Spray Coater
Purpose
  • Coating and baking of
    • AZ5214E resist
    • AZ4562 resist
    • E-beam resist
  • Coating and baking of
    • AZ5214E resist
    • AZ4562 resist
    • SU8 resist
  • In-line substrate HMDS priming
  • Coating and baking of
    • AZ MiR 701 (29cps) resist
    • AZ nLOF 2020 resist
  • Post-exposure baking at 110°C
  • Coating of
  • Coating of all resist
  • Coating of
    • UV sensetive resist
    • E-beam resist
  • Spraying imprint resist
  • Spraying photoresist
  • Spraying of other solutions
Performance Substrate handling
  • Cassette-to-cassette
  • Edge handling chuck
  • Single substrate
  • Non-vacuum chuck for fragile substrates
  • Cassette-to-cassette
Single substrate
  • Can handle almost any sample size and shape
Permanent media
  • AZ5214E resist
  • AZ4562 resist
  • Acetone for chuck cleaning
  • Acetone for drip pan
  • AZ5214E resist
  • PGMEA for edge bead removal
  • Acetone for chuck cleaning
  • AZ MiR 701 (29cps) resist
  • AZ nLOF 2020 resist
  • PGMEA for backside rinse and edge-bead removal
  • PGMEA for spinner bowl cleaning and vapor tip bath
Only manual dispense
  • No permanent media
Manual dispense option
  • 2 automatic syringes
  • yes
  • pneumatic dispense for SU8 resist
  • no
  • Two syringe pumps
Process parameter range Spindle speed
  • 100 - 5000 rpm
  • 100-5000 rpm
  • 10 - 9990 rpm
  • 100 - 5000 rpm
  • 100 - 5000 rpm
  • 100 - 7000 rpm
Gyrset
  • optional
  • optional (max. speed 3000rpm)
  • no
  • optional
  • no
  • no
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafer
  • 150 mm wafer
  • 100 mm wafers
  • 150 mm wafers (tool change required)
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • small pieces down to 10x10 mm2
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • small pieces down to 3x3 mm2
  • Any sample(s) that fit inside machine
Batch size
  • 1-24
  • 1
  • 1-25
  • 1
  • 1
  • 1
  • 1
Allowed materials
  • All cleanroom materials except III-V materials
  • All cleanroom materials except III-V materials
  • Silicon
  • Glass
  • All cleanroom materials
  • All cleanroom materials
  • III-V materials
  • Si, SiO2, SOI
  • All chemicals to be spray coated must be approved specifically for spray coating
  • Any non-toxic, non-particulate and non-crosslinking material is likely to be approved


SSE Spinner

The SSE spinner MAXIMUS: positioned in E-5

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SSE Spinner, Maximus 804, SSE Sister Semiconductor Equipment is a resist spinning system at Danchip which can be used for spinning on 2", 4" and 6" substrates.

The system is equipped with 2 different resists lines:

  • AZ 5214E
  • AZ 4562

and

  • 2 syringe lines, which can be used for spinning of e-beam resist.

The user manual, user APV, and contact information can be found in LabManager

Process information

The typical flow for resist spinning is divided in 3 steps: video, spinning and soft bake. You need to create a separate recipe for each station and then collect the recipes in a flow. For the video station we have 3 standard recipes for 3 different wafer sizes: 2inch, 4inch, 6inch. To create a recipe for the coater station you need to describe spinning sequence using the predefined functions. Then you create recipe for the hotplates. After all recipes are created they can be set together in the different flows. It is why we are not recommending the user just change some parameters in the recipe, this change can effect some other flows.

Flow names, process parameters, and test results:

  • DCH 100mm 1,5µm AZ5214E

Spin-off: xx s at yyyy rpm.

Substrate Thickness Uniformity (+/-) Test date Tester initials Comments
Silicon with native oxide 1,446 5,5% 17/02 2015 chasil with HMDS. Average of 3 wafers
Silicon with native oxide 1,415 3,7% 1/4 2015 chasil with HMDS. Average of 3 wafers



Equipment performance and process related parameters

Purpose
  • Spin coating and soft baking UV sensative resists
  • Spin coating and soft baking E-beam resists
Resist
  • AZ5214E
  • AZ4562
  • E-beam resists
Performance Coating thickness
  • AZ5214E 1-4,2 µm
  • AZ4526 6,2-25 µm
  • E-beam resits 0,1-1 µm
Process parameters Spin speed

100 - 5000 rpm

Spin acceleration

100 - 10000 rpm/s

Hotplate temperature
  • 90°C for softbaking of AZ5214E resist
  • 100°C for softbaking of AZ4562 resist
  • 110°C for reverse baking of AZ5214E resits
  • 180°C for softbaking of e-beam resits
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials except III-V materials

Batch

1 - 24


Spin Track 1 + 2

Spin Track 1 + 2 in C-1

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Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.

The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.

The user manual, user APV, and contact information can be found in LabManager

Process information

Equipment performance and process related parameters

Spin Track 1 2
Purpose
  • HMDS priming
  • Spin coating and soft baking
  • Priming, coating, and baking
  • HMDS priming
  • Spin coating and soft baking
  • Priming, coating, and baking
  • Post-exposure baking
Resist

AZ MiR 701 (29cps)

positive tone

AZ nLOF 2020

negative tone

Performance Coating thickness

1 - 3 µm

1 - 4 µm

HMDS contact angle

60° - 90°; standard recipe 82° (on SiO2)

Process parameters Spin speed

10 - 9990 rpm

Spin acceleration

1000 - 50000 rpm/s

Hotplate temperature

90°C

110°C

HMDS priming temperature

50°C

Substrates Substrate size

100 mm wafers

Allowed materials

Silicon and glass wafers

Film or pattern of all types

Batch

1 - 25


KS Spinner

The KS spinner is placed in C-1

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At Danchip we have RC8-THP system which is one of the SUSS MicroTech spinners.

The main purpose of this equipment is experimental spinning the different resist.The spinner has one resist line, AZ5214E, for automatic dispense. All other resist dispenses manually from syringe or disposable pipettes. All SU8 spinning are done on this machine.

The machine can be also used for spinning on the "difficult" surfaces like the substrates with holes, backside structures and unusual shapes.

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose
  • Spin coating and soft baking UV sensative resists
  • Spin coating SU8 resists
Resist
  • AZ5214E permanent line
  • AZ4562 manual dispense
  • SU8 resists manual dispense
Performance Coating thickness
  • AZ5214E 1-4,2 µm
  • AZ4526 6,2-10 µm
  • SU8 resits 0,1-100 µm
Process parameters Spin speed

100 - 5000 rpm

Spin acceleration

100 - 5000 rpm/s

Hotplate temperature
  • changeable temperature from 20° to 200°
  • SU8 must be bake out on SU8 dedicated hotplates
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials except III-V materials

Batch

1


Manual Spinner (Polymers)

The Manual Spinner (Polymers): positioned in fumehood in C-1

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Manual Spinner (Polymers), OPTIcoat SB20+, from ATMSSE is a resist spinning coater at Danchip which is dedicated for single wafers spinning of e-beam resist, the hot embossing/UV imprint polymers and SU8 resit mixed with color/nano particals.

All polymers must be validated manually during the use. On this spinner you can spin whole 2", 4" and 6" substrates and also a small pieces.

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose
  • Spin coating of hot embossing polymers
  • Spin coating of UV imprinting polymers
  • Spin coating of e-beam resists
  • Spin coating of SU8 resists mixed with color/nano particles
Resist
  • PMMA
  • Topas
  • e-beam resits
  • SU8 resists mixed with color/nano particles
Performance Coating thickness
  • resist depended
Process parameters Spin speed

100 - 5000 rpm

Spin acceleration

100 - 5000 rpm/s

Hotplate temperature
  • changeable temperature from 20° to 200°
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • down to 10x10mm pieces
Allowed materials

All cleanroom materials except III-V materials

Batch

1


Manual Spinner 1

The Manual Spinner 1: positioned in fumehood in E-5

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Manual Spinner 1, WS-650 model, from Laurell is a resist spinning coater at Danchip which can be used for spinning on whole 2", 4" and 6" substrates and also a small pieces.

The system can be used for spinning all resists, but remember to clean the spinner with an appropriate solvents, which can remove the resist residues.

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose
  • Spin coating all resists
Resist
  • all approved resists
Performance Coating thickness
  • resist depended
Process parameters Spin speed

100 - 5000 rpm

Spin acceleration

100 - 5000 rpm/s

Hotplate temperature
  • changeable temperature from 20° to 200°
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • down to 10x10mm pieces
Allowed materials

All cleanroom materials

Batch

1


Spin coater: Manual Labspin

Spin coater: Manual Labspin positioned in A-5

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The Spin coater: Manual Labspin is a SÜSS Labspin6 coater intended for processing of III-V compound semiconductors and CMOS compatible materals. The spinner is mounted in a flow hood located in the A-5 room (yellow room). The extra exhaust should always be turned on while spinning.

Please note, that there are different spinnings bowls for different resist, the first step before processing is choosing the proper bowl to use.

The user manual, user APV, and contact information can be found in LabManager

Process information

Positive tone resists:

AZ 5214E

Spinning curve for AZ5214E‎. Process parameters making the recipe: Spinning speed: xxxprm acceleration: 1000rpm/s time: 60s Baking 60sec on 90C hot plate

ZEP520A

Spinning curve for ZEP520A‎. Process parameters making the recipe: Spinning speed: xxxprm acceleration: 1000rpm/s time: 60s Baking 120sec on 180C hot plate


Negative tone resists

AZ nLoF 2020

Spinning curve for AZ nLoF 2020. Process parameters making the recipe: Spinning speed: xxxprm acceleration: 1000rpm/s time: 30s Baking 60sec on 110C hot plate

HSQ: FOX-15

Spinning curve for FOX-15. Process parameters making the recipe: Prebaking 300sec on 220C hot plate Spinning speed: xxxprm acceleration: 4000rpm/s time: 60s Baking 120sec on 120C hot plate 120sec on 220C hot plate. (Spinning curve made by Alexandra Lupi <allu@fotonik.dtu.dk>)

Equipment performance and process related parameters

Purpose
  • Spin coating UV sensative resists
  • Spin coating E-beam resits
Resist
  • UV sensative resist: AZ5214E, AZMiR701, AZ nLoF 2020
  • E-beam resits: ZEP520A, PMMA, HSQ
  • BCB (bisbenzocyclobutene)
  • Diblock copolymer Poly(styrene-b-methyl methacrylate) P(S-b-PMMA)
Performance Coating thickness

Resist depended see spinning curves for differnt resist

Process parameters Spin speed

Max. speed: 8000 rpm

Spin acceleration

100 - 5000 rpm/s

Hotplate temperature
  • changeable temperature from 20°-200° for III-V materials
  • changeable temperature from 20°-200° for other materials
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • small pieces down to 3x3 mm2
Allowed materials

All cleanroom materials

Batch

1