Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

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Is a part of the RCA cleaning procedure. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. For removal of oxide of processed wafers the other HF/BHF bath can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.
Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.

Revision as of 11:48, 3 March 2014

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Removal of native oxide is a part of the RCA cleaning procedure. See the RCA page for further details. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used see the oxide etch page.

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