Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions

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'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''


'''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=83 Phosphorus Predep furnace (A4)]'''
'''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=83 Phosphorus Pre-dep furnace (A4)]'''


== Process knowledge ==
== Process knowledge ==
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]]
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]]


==Overview of the performance of the Phosphoris Pre-dep furnace and some process related parameters==
==Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="0"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Doping of Phosphor
|style="background:WhiteSmoke; color:black"|
|-
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
*Phosphorus pre-deposition using POCL
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Look at Process knowladge
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
Line 46: Line 41:
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 4" wafer (or 2" wafers) per run
*1-30 100 mm wafers (or 50 mm wafers) per run
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (RCA cleaned)
*Silicon wafers (RCA cleaned)
|-
|-
|}
|}

Revision as of 13:40, 10 January 2014

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Phosphorus Pre-dep furnace (A4)

Phosphorus Pre-dep furnace (A4). Positioned in cleanroom 2

The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl3.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Phosphorus Pre-dep furnace (A4)

Process knowledge

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

Purpose
  • Phosphorus pre-deposition using POCL
Process parameter range Process Temperature
  • 900-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • POCl3, N2
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned)
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