Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions

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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace click here]'''
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==Phosphorus Predep furnace (A4)==
==Phosphorus Pre-dep furnace (A4)==
[[Image:A4.JPG|thumb|300x300px|A4 Phosphor Pre-dep furnace. Positioned in cleanroom 2]]
[[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom 2]]


The Phosphorus Predep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl<sub>3</sub>.
The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl<sub>3</sub>.


A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  
A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  
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'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=47 Phosphorus Predep furnace (A4)]'''
'''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=83 Phosphorus Predep furnace (A4)]'''


== Process knowledge ==
== Process knowledge ==
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]]
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]]


==Overview of the performance of the Phosphor pre-dep furnace and some process related parameters==
==Overview of the performance of the Phosphoris Pre-dep furnace and some process related parameters==


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Revision as of 13:34, 10 January 2014

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Phosphorus Pre-dep furnace (A4)

Phosphorus Pre-dep furnace (A4). Positioned in cleanroom 2

The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl3.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Phosphorus Predep furnace (A4)

Process knowledge

Overview of the performance of the Phosphoris Pre-dep furnace and some process related parameters

Purpose Doping of Phosphor
Performance
  • Look at Process knowladge
Process parameter range Process Temperature
  • 900-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • POCl3, N2
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (RCA cleaned)
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