Specific Process Knowledge/Lithography/Descum: Difference between revisions
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[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]] | [[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]] | ||
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=Plasma Asher 2= | =Plasma Asher 2= | ||
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[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]] | [[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]] | ||
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=Plasma Asher 3: Descum= | =Plasma Asher 3: Descum= | ||
Product name: Diener Pico Plasma Asher<br> | |||
Year of purchase: 2014 | |||
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login''' | The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login''' | ||
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=Plasma Asher 4= | =Plasma Asher 4= | ||
Product name: PVA Tepla Gigabatch 380M<br> | |||
Year of purchase: 2024 | |||
Descum of AZ 5214E on 100 mm wafers. The descum process development was done for a single substrate, as well as 3 substrates (for decreased ashing rate and improved ashing uniformity). The substrates were placed vertically in the glass boat. | Descum of AZ 5214E on 100 mm wafers. The descum process development was done for a single substrate, as well as 3 substrates (for decreased ashing rate and improved ashing uniformity). The substrates were placed vertically in the glass boat. | ||
<gallery style="text-align: center;" widths=250 heights=250> | |||
PA_boat_1Wafer_v2.png|Single vertical substrate | |||
PA_boat_3Wafer_v2.png|3 vertical substrates:<br>Dummy - Test - Dummy | |||
</gallery> | |||
For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. The wafers were placed in consecutive slots - when running multiple wafers in this way, the first and last wafers should always be dummy wafers. | For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. The wafers were placed in consecutive slots - when running multiple wafers in this way, the first and last wafers should always be dummy wafers. | ||
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{| class="wikitable" | {| class="wikitable" | ||
|- | |- | ||
! | ! !! Single substrate !! Center of 3 substrates | ||
|- | |||
! scope=row style="text-align: left;" | Test results: ashing rate | |||
| 5.7 ±2.1 nm/min|| 3.8 ±1.6 nm/min | |||
|- | |- | ||
! scope=row| Test results | ! scope=row style="text-align: left;" | Test results: non-uniformity | ||
| 0.6 ±0.4% || 0.4 ±0.2% | |||
|- | |- | ||
! scope=row| Wafers | ! scope=row style="text-align: left;" | Wafers | ||
| 1 || 3 | | 1 || 3 | ||
|- | |- | ||
! scope=row| Wafer size | ! scope=row style="text-align: left;" | Wafer size | ||
| 100 mm || 100 mm | | 100 mm || 100 mm | ||
|- | |- | ||
! scope=row| Boat position | ! scope=row style="text-align: left;" | Boat position | ||
| Center of chamber || Center of chamber | | Center of chamber || Center of chamber | ||
|- | |- | ||
! scope=row| Test wafer position | ! scope=row style="text-align: left;" | Test wafer position | ||
| Center of boat || Center of boat | | Center of boat || Center of boat | ||
|- | |- | ||
! scope=row| Total gas flow rate | ! scope=row style="text-align: left;" | Total gas flow rate | ||
| 200 sccm || 200 sccm | | 200 sccm || 200 sccm | ||
|- | |- | ||
! scope=row| Gas mix ratio | ! scope=row style="text-align: left;" | Gas mix ratio | ||
| 50% N<sub>2</sub> || 50% N<sub>2</sub> | | 50% N<sub>2</sub> || 50% N<sub>2</sub> | ||
|- | |- | ||
! scope=row| Chamber pressure | ! scope=row style="text-align: left;" | Chamber pressure | ||
| 1.3 mbar || 1.3 mbar | | 1.3 mbar || 1.3 mbar | ||
|- | |- | ||
! scope=row| Power | ! scope=row style="text-align: left;" | Power | ||
| 200 W || 200 W | | 200 W || 200 W | ||
|- | |- | ||
! scope=row| Test processing time | ! scope=row style="text-align: left;" | Test processing time | ||
| Tested parameter || Tested parameter | | Tested parameter || Tested parameter | ||
|- | |- | ||
! scope=row| Test average temperature | ! scope=row style="text-align: left;" | Test average temperature | ||
| 33°C || 33°C | | 33°C || 33°C | ||
|} | |} | ||
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==Comparison of ashing rate between substrate sizes== | |||
It is assumed that the low power descum rates, for different substrate sizes, follows the same pattern as the high power ashing rates, which can be seen [[Specific_Process_Knowledge/Lithography/Strip#Comparison_of_ashing_rate_between_substrate_sizes_for_plasma_asher_4_&_5|here]]. | |||
=Plasma Asher 5= | =Plasma Asher 5= | ||
Product name: PVA Tepla Gigabatch 380M<br> | |||
Year of purchase: 2024 | |||
Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|here]]. | Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|here]]. | ||