Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''


''This page is written by DTU Nanolab  internal''
==Annealing==


At DTU Nanolab  we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''
A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.


==Annealing==
==Comparison of the annealing furnaces==
At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
 
The furnace for oxidation are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not necessary to make one more.


==Comparison of the annealing furnaces==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="4" style="text-align:left;"  
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!
!
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide|Anneal Oxide furnace (C1)]]
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal-Bond furnace (C3)]]
!
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing|Resist Pyrolysis (research tool)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]]
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!General description
!General description
|Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1.  
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.  
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of almost materials on silicon wafer.
|Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
|Rapid thermal annealing
|Resist pyrolysis
|Rapid thermal processing, usually, annealing (RTA).
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Annealing gas
!Annealing gas
|
|
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
*Wet annealing with bobbler (water steam + N<sub>2</sub>)
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested)
|
*N<sub>2</sub>
*(H<sub>2</sub>-N<sub>2</sub> gas mixture)
*Vacuum is possible
|
*Ar
*Ar
*N<sub>2</sub>
*Low vacuum is possible (min. 2/3 mbar)
|
|
*N<sub>2</sub>
*Ar
*Vacuum is possible  
*NH<sub>3</sub>
*O<sub>2</sub>
*5% H<sub>2</sub>/Ar
*High vacuum is possible (10<sup>-6</sup> mbar)
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Process temperature
!Process temperature
|
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*700 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*350 <sup>o</sup>C - 1150 <sup>o</sup>C
*Max 500 <sup>o</sup>C for wafers and samples with Al
|
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
|
*20 <sup>o</sup>C - 1200 <sup>o</sup>C
* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer'''
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
|
|
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*700 <sup>o</sup>C - 1200 <sup>o</sup>C
*Ramp up to 300 C/min
*Max. 150 <sup>o</sup>C/s
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Substrate and Batch size  
!Substrate and Batch size  
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1-30 150 mm wafer
*(Small samples on a carrier wafer, horizontal)
|
|
*Small samples on carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*Small samples on a carrier wafer, horizontal
|
|
*Small samples on carrier wafer, horizontal
*1-30 50 mm wafers
*1-25 50 mm wafers
*1-30 100 mm wafers
*1-25 100 mm wafers, vertical and horizontal
*1 150 mm wafer
*Small samples on a carrier wafer, horizontal
|
*1-30 50 mm, 100 mm or 150 mm wafers  
*Small samples on a carrier wafer, horizontal
|
*Single-wafer process
*Chips on carrier
*50 mm, 100 mm or 150 mm wafers
|
|
*Small samples on carrier wafer
*Single-wafer process
*One 100 mm wafers on carrier wafer
*Chips on carrier
*100 mm or 150 mm wafers
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|
|
*All processed wafers have to be RCA cleaned.  
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.  
*Except for wafers from LPCVD furnaces and PECVD1.  
|
*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
|
*Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
|
|
*All processed wafers have to be RCA cleaned.
*Samples for resist pyrolysis.
*Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
*No metals allowed
|
|
*Almost all materials, permission is need.  
*Silicon
*Silicon oxides and nitrides
*Quartz
*Metals - ask for permission
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
|
|
*III-V samples
*Silicon
*Silicon wafer
*Silicon Nitride
*Some metals
*Aluminum Oxide
|-
|-
|}
|}


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Latest revision as of 15:12, 7 November 2024

Feedback to this page: click here

This page is written by DTU Nanolab internal

Annealing

At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.

A 20-minute N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.

Comparison of the annealing furnaces

Anneal Oxide furnace (C1)

Anneal-Bond furnace (C3)

Aluminium Anneal furnace (C4)

Resist Pyrolysis (research tool)

RTP2 Jipelec

RTP Annealsys (research tool)

General description Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. Annealing of wafers and samples with Al and ALD deposited AL2O3 and TiO2 Resist pyrolysis Rapid thermal processing, usually, annealing (RTA). Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
Annealing gas
  • N2
  • N2
  • N2
  • (Forming gas, 5% H2/95% N2 - Being tested)
  • N2
  • (H2-N2 gas mixture)
  • Vacuum is possible
  • Ar
  • N2
  • Low vacuum is possible (min. 2/3 mbar)
  • Ar
  • NH3
  • O2
  • 5% H2/Ar
  • High vacuum is possible (10-6 mbar)
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 350 oC - 1150 oC
  • Max 500 oC for wafers and samples with Al
  • Vacuum: 20 oC - 1050 oC¨
  • No vacuum: 20 oC - 1050 oC
  • 20 oC - 1200 oC
  • Max. 100 oC/s with carrier wafer or sample wafer
  • Max. 50 oC/s with SiC-coated graphite susceptor
  • 700 oC - 1200 oC
  • Max. 150 oC/s
Substrate and Batch size
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafer
  • (Small samples on a carrier wafer, horizontal)
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1 150 mm wafer
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm, 100 mm or 150 mm wafers
  • Small samples on a carrier wafer, horizontal
  • Single-wafer process
  • Chips on carrier
  • 50 mm, 100 mm or 150 mm wafers
  • Single-wafer process
  • Chips on carrier
  • 100 mm or 150 mm wafers
Allowed materials
  • All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.
  • All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
  • Wafers and samples with Al and ALD deposited AL2O3 and TiO2
  • Samples for resist pyrolysis.
  • No metals allowed
  • Silicon
  • Silicon oxides and nitrides
  • Quartz
  • Metals - ask for permission
  • III-V materials - below 440 °C, otherwise it can lead to outgassing of toxic gases.
  • Silicon
  • Silicon Nitride
  • Aluminum Oxide


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