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==Etching of Titanium==
==Etching of Titanium==


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==Comparison of Titanium Etch Metodes==
==Comparison of Titanium Etch Methodes==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|BHF:Etch of titanium with or without photoresist mask.
|BHF Etch of titanium with or without photoresist mask.
|Cold RCA1: Etch of titanium (as stripper or with eagle resist).  
|Cold RCA1 mix etch of titanium (as stripper or with eagle resist).  
|Dry plasma etch of Ti
|Dry plasma etch of Ti
|Sputtering of Ti - pure physical etch
|Sputtering of Ti - pure physical etch
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*~?nm/min
*~?nm/min
|
|
*~14 nm/min (depending on features size and etch load)  
*~50-200 nm/min (depending on features size and etch load and recipe settings)  
|  
|  
*~30nm/min (not tested yet)
*~20nm/min
|-
|-


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|
*smaller pieces on a carrier wafer
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
*<nowiki>#</nowiki>1 150mm wafers  
|
|
Smaller pieces glued to carrier wafer
Smaller pieces glued to carrier wafer
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Ething of Titanium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP]] using Chlorine chemistry or with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions.
==Wet etching of Titanium==
[[Image:Fumehoodetch-chrom2.jpg|300x300px|thumb|Fume hood: positioned in cleanroom 2. <br />Wet Etch of Titanium can take place in this pp tank or in a beaker in this fume hood]]
We have two solutions for wet titanium etching:
 
# BHF
# Cold RCA1
Do it by making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. BHF etching can also take place in the PP-etch bath in the fume hood in cleanroom 2.
===Comparing the two solutions===
{| border="1" cellspacing="0" cellpadding="4"
!
! width="200" | BHF
! width="200" | Cold RCA1
|-
|'''General description'''
| Etch of titanium with or without photoresist mask.
| Etch of titanium (as stripper or with eagle resist).
|-
|'''Chemical solution'''
|HF:NH<sub>4</sub>F 
|NH<sub>3</sub>OH:H<sub>2</sub>O<sub>2</sub>:H<sub>2</sub>O - 1:1:5
|-
|'''Process temperature'''
|Room temperature
|Room temperature
|-
|'''Possible masking materials'''
|
Photoresist (1.5 µm AZ5214E)
|
Eagle resist
|-
|'''Etch rate'''
|
Not known (it bubbles while etching)
|
Not known
|-
|'''Batch size'''
|
1-5 4" in beaker
1-25 wafers at a time in PP-etch bath
|
1-5 4" wafer at a time
|-
|'''Etch bath'''
|Beaker or PP-etch bath in the fume hood in cleanroom 2.
|Beaker
|-
|'''Allowed materials'''
|
No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2.
Make a note on the beaker of which materials have been processed.
|
No restrictions when used in beaker.
Make a note on the beaker of which materials have been processed.
|-
|}
== Dry etching of titanium ==
See the [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]] page.

Latest revision as of 13:36, 18 April 2024

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Titanium

Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Titanium Etch Methodes

Ti wet etch 1 Ti wet etch 2 ICP metal IBE (Ionfab300+)
Generel description BHF Etch of titanium with or without photoresist mask. Cold RCA1 mix etch of titanium (as stripper or with eagle resist). Dry plasma etch of Ti Sputtering of Ti - pure physical etch
Etch rate range
  • ~?nm/min
  • ~?nm/min
  • ~50-200 nm/min (depending on features size and etch load and recipe settings)
  • ~20nm/min
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • Any size and number that can go inside the beaker in use
  • Any size and number that can go inside the beaker in use
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
  • #1 150mm wafers

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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