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	<id>https://labadviser.nanolab.dtu.dk//index.php?action=history&amp;feed=atom&amp;title=Specific_Process_Knowledge%2FWafer_cleaning%2Fcleaning_with_HF</id>
	<title>Specific Process Knowledge/Wafer cleaning/cleaning with HF - Revision history</title>
	<link rel="self" type="application/atom+xml" href="https://labadviser.nanolab.dtu.dk//index.php?action=history&amp;feed=atom&amp;title=Specific_Process_Knowledge%2FWafer_cleaning%2Fcleaning_with_HF"/>
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	<updated>2026-05-13T09:08:26Z</updated>
	<subtitle>Revision history for this page on the wiki</subtitle>
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	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=52921&amp;oldid=prev</id>
		<title>Mmat at 15:21, 10 June 2025</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=52921&amp;oldid=prev"/>
		<updated>2025-06-10T15:21:19Z</updated>

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&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
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				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 17:21, 10 June 2025&lt;/td&gt;
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&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&amp;#039;&amp;#039;&amp;#039;All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.&amp;#039;&amp;#039;&amp;#039;&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&amp;#039;&amp;#039;&amp;#039;All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.&amp;#039;&amp;#039;&amp;#039;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Mmat</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=44627&amp;oldid=prev</id>
		<title>Mbec at 11:56, 13 February 2023</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=44627&amp;oldid=prev"/>
		<updated>2023-02-13T11:56:14Z</updated>

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				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 13:56, 13 February 2023&lt;/td&gt;
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&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&amp;#039;&amp;#039;&amp;#039;All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.&amp;#039;&amp;#039;&amp;#039;&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&amp;#039;&amp;#039;&amp;#039;All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.&amp;#039;&amp;#039;&amp;#039;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
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&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&#039;&#039;&#039;Feedback to this page&#039;&#039;&#039;: &#039;&#039;&#039;[mailto:wetchemistry@&lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;danchip&lt;/del&gt;.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF click here]&#039;&#039;&#039;&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&#039;&#039;&#039;Feedback to this page&#039;&#039;&#039;: &#039;&#039;&#039;[mailto:wetchemistry@&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;nanolab&lt;/ins&gt;.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF click here]&#039;&#039;&#039;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Mbec</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=44520&amp;oldid=prev</id>
		<title>Rkch at 15:15, 6 February 2023</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=44520&amp;oldid=prev"/>
		<updated>2023-02-06T15:15:34Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
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				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 17:15, 6 February 2023&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l1&quot;&gt;Line 1:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 1:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-side-deleted&quot;&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;&#039;&#039;&#039;Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.&#039;&#039;&#039;&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
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&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-side-deleted&quot;&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&amp;#039;&amp;#039;&amp;#039;Feedback to this page&amp;#039;&amp;#039;&amp;#039;: &amp;#039;&amp;#039;&amp;#039;[mailto:wetchemistry@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF click here]&amp;#039;&amp;#039;&amp;#039;&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&amp;#039;&amp;#039;&amp;#039;Feedback to this page&amp;#039;&amp;#039;&amp;#039;: &amp;#039;&amp;#039;&amp;#039;[mailto:wetchemistry@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF click here]&amp;#039;&amp;#039;&amp;#039;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Rkch</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=39023&amp;oldid=prev</id>
		<title>Mbec at 12:49, 19 August 2021</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=39023&amp;oldid=prev"/>
		<updated>2021-08-19T12:49:14Z</updated>

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				&lt;col class=&quot;diff-content&quot; /&gt;
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				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 14:49, 19 August 2021&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l2&quot;&gt;Line 2:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 2:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please&lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;, &lt;/del&gt;see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Mbec</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=31907&amp;oldid=prev</id>
		<title>Rkch at 10:56, 2 July 2019</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=31907&amp;oldid=prev"/>
		<updated>2019-07-02T10:56:03Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;en&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 12:56, 2 July 2019&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l2&quot;&gt;Line 2:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 2:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please, see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details&lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;.&lt;/del&gt;.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please, see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Rkch</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=26991&amp;oldid=prev</id>
		<title>Rkch at 07:41, 5 July 2017</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=26991&amp;oldid=prev"/>
		<updated>2017-07-05T07:41:05Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;en&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 09:41, 5 July 2017&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l2&quot;&gt;Line 2:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 2:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please, see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please, see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;.&lt;/ins&gt;.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Rkch</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13552&amp;oldid=prev</id>
		<title>Kabi at 13:27, 4 March 2014</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13552&amp;oldid=prev"/>
		<updated>2014-03-04T13:27:29Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;en&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 15:27, 4 March 2014&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l2&quot;&gt;Line 2:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 2:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;. Please, &lt;/ins&gt;see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Kabi</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13434&amp;oldid=prev</id>
		<title>Kabi at 09:52, 3 March 2014</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13434&amp;oldid=prev"/>
		<updated>2014-03-03T09:52:39Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;en&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 11:52, 3 March 2014&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l2&quot;&gt;Line 2:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 2:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. &lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;This &lt;/del&gt;bath must only be used during the RCA cleaning procedure &lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;or to remove native oxide on new wafers from the box&lt;/del&gt;. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;The HF/BHF baths in the RCA bench &lt;/ins&gt;bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;for more details&lt;/ins&gt;.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Kabi</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13433&amp;oldid=prev</id>
		<title>Kabi at 09:48, 3 March 2014</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13433&amp;oldid=prev"/>
		<updated>2014-03-03T09:48:23Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
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				&lt;tr class=&quot;diff-title&quot; lang=&quot;en&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 11:48, 3 March 2014&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l2&quot;&gt;Line 2:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 2:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;Is &lt;/del&gt;a part of the RCA cleaning procedure. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box&lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details&lt;/del&gt;. For removal of oxide of processed wafers the other HF/BHF &lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;bath &lt;/del&gt;can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;Removal of native oxide is &lt;/ins&gt;a part of the RCA cleaning procedure&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details&lt;/ins&gt;. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. For removal of oxide of processed wafers &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;that is not getting a full RCA clean &lt;/ins&gt;the other HF/BHF &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;baths &lt;/ins&gt;can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Kabi</name></author>
	</entry>
	<entry>
		<id>https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13432&amp;oldid=prev</id>
		<title>Kabi at 09:46, 3 March 2014</title>
		<link rel="alternate" type="text/html" href="https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF&amp;diff=13432&amp;oldid=prev"/>
		<updated>2014-03-03T09:46:56Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table style=&quot;background-color: #fff; color: #202122;&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;en&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Older revision&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Revision as of 11:46, 3 March 2014&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l2&quot;&gt;Line 2:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 2:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot;&gt;&lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;br&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;−&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Is &lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;in use during &lt;/del&gt;the RCA procedure. This bath must only be used &lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;in &lt;/del&gt;the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details &lt;del style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;or &lt;/del&gt;the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.&lt;/div&gt;&lt;/td&gt;&lt;td class=&quot;diff-marker&quot; data-marker=&quot;+&quot;&gt;&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Is &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;a part of &lt;/ins&gt;the RCA &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;cleaning &lt;/ins&gt;procedure. This bath must only be used &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;during &lt;/ins&gt;the RCA &lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;cleaning &lt;/ins&gt;procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;. For removal of oxide of processed wafers the other HF/BHF bath can be used see &lt;/ins&gt;the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Kabi</name></author>
	</entry>
</feed>