Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test - Revision history

Reet: /* Ion source */

2025-08-28T07:29:15Z

Ion source

← Older revision		Revision as of 09:29, 28 August 2025
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	The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.		The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.

	~~In 2025 we tested the ion source again for SiO<sub>2</sub> using the standard recipe called "ion_etch_Stephen". We found very good agreement with our previous results:~~
	The etch rate was 0.9 +/- 0.1 nm/min for one batch and 1.1 +/- 0.1 nm/min for a second batch (based on measurement of SiO2 layers before and after a total etch of 4 minutes to improve the ability to measure the difference with ellipsometry). Wafer-to-wafer variation was around 2 % within the same batch. Again the etch was strongest in the center with ~10-15 % higher etch rate in the center than at the edge of the wafer. So while the etch rate at the edge was 1 nm/min, the rate at the center was 1.1 nm/min more or less.

	== Vacuum performance ==		== Vacuum performance ==

Reet: /* Ion source */

2025-08-27T21:01:49Z

Ion source

← Older revision		Revision as of 23:01, 27 August 2025
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	== Ion source ==		== Ion source ==

	We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub>. The etch rate is strongest in the center, about 15-20% higher than at the edges of a 6" wafer.		We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub> at the acceptance test in 2028. The etch rate was strongest in the center, about 15-20% higher than at the edges of a 6" wafer.

	The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.		The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.

			In 2025 we tested the ion source again for SiO<sub>2</sub> using the standard recipe called "ion_etch_Stephen". We found very good agreement with our previous results:
			The etch rate was 0.9 +/- 0.1 nm/min for one batch and 1.1 +/- 0.1 nm/min for a second batch (based on measurement of SiO2 layers before and after a total etch of 4 minutes to improve the ability to measure the difference with ellipsometry). Wafer-to-wafer variation was around 2 % within the same batch. Again the etch was strongest in the center with ~10-15 % higher etch rate in the center than at the edge of the wafer. So while the etch rate at the edge was 1 nm/min, the rate at the center was 1.1 nm/min more or less.

	== Vacuum performance ==		== Vacuum performance ==

Reet: /* Temescal acceptance test */

2025-08-05T12:42:54Z

Temescal acceptance test

← Older revision		Revision as of 14:42, 5 August 2025
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	In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.		In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.

	The uniformity of the ion beam etch was ~~tested~~ on Si wafers with SiO<sub>2</sub> coating of a known thickness~~. It was measured by ellipsometry~~.		The uniformity of the ion beam etch was measured by ellipsometry in 5 points on Si wafers with SiO<sub>2</sub> coating of a known thickness.

	For metal films the thickness was measured with a stylus profiler and for Ti/Ni the sheet resistance uniformity was measured by Capres.		For metal films the thickness was measured with a stylus profiler and for Ti/Ni the sheet resistance uniformity was measured by Capres A/S (now part of KLA).

	Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.		Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.

Paphol at 09:43, 11 May 2023

2023-05-11T09:43:07Z

← Older revision		Revision as of 11:43, 11 May 2023
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Temescal/Acceptance_Test click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Temescal/Acceptance_Test click here]'''

			<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>

	==Temescal acceptance test ==		==Temescal acceptance test ==

Reet: /* Thickness uniformity */

2022-08-16T10:50:32Z

Thickness uniformity

← Older revision		Revision as of 12:50, 16 August 2022
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	The thickness uniformity was not tested for the 8" sample holder nor for the tilted sample holder.		The thickness uniformity was not tested for the 8" sample holder nor for the tilted sample holder.

	We cannot guarantee that the batch-to-batch thickness reproducibility will always be below 3 % as there may be more drift over longer times. We check the thickness of a Ti/Au deposition every month and ensure that it is within 10 % of the expected value and ~~so far, within~~ in ~~the first half year of using the instrument,~~ the variation has been much less than 10 %.		We cannot guarantee that the batch-to-batch thickness reproducibility will always be below 3 % as there may be more drift over longer times. We check the thickness of a Ti/Au deposition every month and ensure that it is within 10 % of the expected value and in most cases the variation has been much less than 10 %. You can see the deviation over time in the QC data which is found in LabManager under Documents or ask staff for the detailed data.


	== Sheet resistance uniformity ==		== Sheet resistance uniformity ==

Reet: /* Temescal acceptance test */

2022-08-16T10:44:19Z

Temescal acceptance test

← Older revision		Revision as of 12:44, 16 August 2022
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	In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.		In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.

	The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness.		The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness. It was measured by ellipsometry.

	For metal films, the thickness and for Ti/Ni the sheet resistance uniformity ~~were~~ measured.		For metal films the thickness was measured with a stylus profiler and for Ti/Ni the sheet resistance uniformity was measured by Capres.

	Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.		Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.

Reet: /* Temescal acceptance test */

2022-08-16T10:42:08Z

Temescal acceptance test

← Older revision		Revision as of 12:42, 16 August 2022
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	[[File:w26 with resist02.jpg\|400px\|right\|thumb\|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]]		[[File:w26 with resist02.jpg\|400px\|right\|thumb\|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]]

	In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger.		In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.

	The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness.		The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness.

Reet: /* Temescal acceptance test */

2018-09-14T13:50:15Z

Temescal acceptance test

← Older revision		Revision as of 15:50, 14 September 2018
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	[[File:w26 with resist02.jpg\|400px\|right\|thumb\|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]]		[[File:w26 with resist02.jpg\|400px\|right\|thumb\|Si wafer with 1 µm tall nLOF resist pattern and 10 nm Ti/100 nm Au on top. The side wall is free of deposition.]]

	In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films.		In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger.

	The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness.		The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness.

Reet: /* Ion source */

2018-09-14T13:49:11Z

Ion source

← Older revision		Revision as of 15:49, 14 September 2018
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	We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub>. The etch rate is strongest in the center, about 15-20% higher than at the edges of a 6" wafer.		We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub>. The etch rate is strongest in the center, about 15-20% higher than at the edges of a 6" wafer.

	The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between ~~the~~ two identical batches.		The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.


	== Vacuum performance ==		== Vacuum performance ==

Reet: /* Side wall deposition on tilted samples */

2018-09-14T13:48:34Z

Side wall deposition on tilted samples

← Older revision		Revision as of 15:48, 14 September 2018
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	As expected, the side wall deposition was thicker for 53 ° tilt than for 17 ° tilt.		As expected, the side wall deposition was thicker for 53 ° tilt than for 17 ° tilt.

	[[File:tilt27_sample1-_01.jpg\|400px\|thumb\|left\|17 ° tilt: Side wall deposition of Ti/Au on Si and nLOF resist.]]		[[File:tilt27_sample1-_01.jpg\|400px\|thumb\|left\|17 ° tilt: Side wall deposition of Ti/Au on Si and 1 µm tall nLOF resist.]]
	[[File:tilt53_sample2_01.jpg\|400px\|thumb\|right\|53 ° tilt: Side wall deposition of Ti/Au on Si and nLOF resist.]]		[[File:tilt53_sample2_01.jpg\|400px\|thumb\|right\|53 ° tilt: Side wall deposition of Ti/Au on Si and 1 µm tall nLOF resist.]]