Specific Process Knowledge/Thin film deposition/PECVD/Doping - Revision history

Mmat at 14:23, 10 June 2025

2025-06-10T14:23:13Z

← Older revision		Revision as of 16:23, 10 June 2025
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''

	=<span style="color:#FF0000">This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar</span>=		<span style="color:#FF0000">This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar</span>

	==Boron-doping by use of BSG glass deposited in PECVD2==		==Boron-doping by use of BSG glass deposited in PECVD2==

Bghe: /* Boron-doping by use of BSG glass deposited in PECVD2 */

2023-08-07T13:08:12Z

Boron-doping by use of BSG glass deposited in PECVD2

← Older revision		Revision as of 15:08, 7 August 2023
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	[[image:PECVD_Boron_doping_profiles.jpg\|627x424px\|left\|thumb\|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]]		[[image:PECVD_Boron_doping_profiles.jpg\|627x424px\|left\|thumb\|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]]
			<br clear="all" />

	Measured peak concentrations and sheet resistances:		Measured peak concentrations and sheet resistances:
			<br>
	{\| border="1" cellspacing="0" cellpadding="7" with="50" style="text-align:center;"		{\| border="1" cellspacing="0" cellpadding="7" with="50" style="text-align:center;"
	\|-		\|-

Bghe at 07:38, 5 October 2020

2020-10-05T07:38:29Z

← Older revision		Revision as of 09:38, 5 October 2020
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''

	=<span style="color:#FF0000">This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar</span>=		=<span style="color:#FF0000">This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar</span>=

Bghe: /* This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar */

2020-10-05T07:37:51Z

This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar

← Older revision		Revision as of 09:37, 5 October 2020
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''

	=This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar=		=<span style="color:#FF0000">This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar</span>=

	==Boron-doping by use of BSG glass deposited in PECVD2==		==Boron-doping by use of BSG glass deposited in PECVD2==

Bghe at 10:28, 12 March 2018

2018-03-12T10:28:02Z

← Older revision		Revision as of 12:28, 12 March 2018
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''

			=This work has been done on PECVD2. PECVD2 has been decomissioned but we keep this information because we expect PECVD3 and PECVD4 to behave similar=

	==Boron-doping by use of BSG glass deposited in PECVD2==		==Boron-doping by use of BSG glass deposited in PECVD2==

Kabi: /* Recipe */

2015-12-01T13:09:33Z

Recipe

← Older revision		Revision as of 15:09, 1 December 2015
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	5 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide.		5 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide.
	The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then analyzed by SIMS and the results are shown in the figure below:		The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF.

			The wafers were then analyzed by SIMS and the results are shown in the figure below:

Kabi: /* Recipe */

2015-12-01T13:08:57Z

Recipe

← Older revision		Revision as of 15:08, 1 December 2015
Line 67:		Line 67:

	3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide.		3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide.

	The wafers were going through several annealing and oxidation step:		The wafers were going through several annealing and oxidation step:

Kabi: /* Recipe */

2015-12-01T13:08:40Z

Recipe

← Older revision		Revision as of 15:08, 1 December 2015
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	\|}		\|}

	3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in ~~440 nm~~ Oxide.		3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide.
	The wafers were going through several annealing and oxidation step:		The wafers were going through several annealing and oxidation step:

Kabi at 13:04, 1 December 2015

2015-12-01T13:04:23Z

← Older revision		Revision as of 15:04, 1 December 2015
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD/Doping click here]'''




	~~=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png\|200px]]=~~

	==Boron-doping by use of BSG glass deposited in PECVD2==		==Boron-doping by use of BSG glass deposited in PECVD2==

Kabi: /* Recipe */

2015-12-01T13:02:33Z

Recipe

← Older revision		Revision as of 15:02, 1 December 2015
Line 84:		Line 84:

	[[image:PECVD_Boron_doping_profiles.jpg\|627x424px\|left\|thumb\|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]]		[[image:PECVD_Boron_doping_profiles.jpg\|627x424px\|left\|thumb\|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]]

			Measured peak concentrations and sheet resistances:

			{\| border="1" cellspacing="0" cellpadding="7" with="50" style="text-align:center;"
			\|-
			\|Wafer
			\|Peak Concentration
			[atoms/cm<sup>3</sup>]
			\|Sheet Resistance
			[Ω/sq]
			\|-
			\|BSG120
			\|1.75*10<sup>19</sup>
			\|56.4
			\|-
			\|BSG130
			\|2.44*10<sup>19</sup>
			\|36.2
			\|-
			\|BSG140
			\|2.36*10<sup>19</sup>
			\|40.3
			\|-
			\|}

	<br clear="all" />		<br clear="all" />