Specific Process Knowledge/Thin film deposition/PECVD - Revision history

Mmat at 20:26, 20 June 2025

2025-06-20T20:26:28Z

← Older revision		Revision as of 22:26, 20 June 2025
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br>		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br>

	[[~~index.php?title=~~Category:Equipment\|Thin film PECVD]]		[[Category:Equipment\|Thin film PECVD]]
	[[~~index.php?title=~~Category:Thin Film Deposition\|PECVD]]		[[Category:Thin Film Deposition\|PECVD]]

	==PECVD Plasma Enhanced Chemical Vapor Deposition==		==PECVD Plasma Enhanced Chemical Vapor Deposition==

Elelop: /* Process information on PECVD3 and PECVD4 */

2025-06-18T09:09:12Z

Process information on PECVD3 and PECVD4

← Older revision		Revision as of 11:09, 18 June 2025
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br>		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br>

	[[Category: Equipment\|Thin film PECVD]]		[[index.php?title=Category:Equipment\|Thin film PECVD]]
	[[Category: Thin Film Deposition\|PECVD]]		[[index.php?title=Category:Thin Film Deposition\|PECVD]]

	==PECVD Plasma Enhanced Chemical Vapor Deposition==		==PECVD Plasma Enhanced Chemical Vapor Deposition==
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	*[[/Pre-release tests on PECVD4\|Pre-release tests on PECVD4]]		*[[/Pre-release tests on PECVD4\|Pre-release tests on PECVD4]]

	*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si deposition using PECVD\|Si deposition using PECVD3]]		*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si deposition using PECVD\|Si deposition using PECVD3]]<br />







	<br ~~clear="all"~~ />

	==Overview of the performance of PECVD thin films and some process related parameters==		==Overview of the performance of PECVD thin films and some process related parameters==

Mmat at 14:22, 16 June 2025

2025-06-16T14:22:51Z

← Older revision		Revision as of 16:22, 16 June 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br>		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br>

	[[Category: Equipment\|Thin film PECVD]]		[[Category: Equipment\|Thin film PECVD]]
	[[Category: Thin Film Deposition\|PECVD]]		[[Category: Thin Film Deposition\|PECVD]]
	~~{{CC1}}~~

	==PECVD Plasma Enhanced Chemical Vapor Deposition==		==PECVD Plasma Enhanced Chemical Vapor Deposition==

Bghe: /* Overview of the performance of PECVD thin films and some process related parameters */

2025-05-02T11:45:57Z

Overview of the performance of PECVD thin films and some process related parameters

← Older revision		Revision as of 13:45, 2 May 2025
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	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~10nm - 30µm		*~10nm - 30µm (recipe dependant)
	\|		\|
	*~10nm - 30µm		*~10nm - 30µm (recipe dependant)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Index of refraction		\|style="background:LightGrey; color:black"\|Index of refraction

Bghe: /* Overview of the performance of PECVD thin films and some process related parameters */

2023-05-26T07:53:30Z

Overview of the performance of PECVD thin films and some process related parameters

← Older revision		Revision as of 09:53, 26 May 2023
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	\|style="background:LightGrey; color:black"\|Gas flows		\|style="background:LightGrey; color:black"\|Gas flows
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*SiH<sub>4</sub>:0-60 sccm		*SiH<sub>4</sub>:0-180 sccm
	*N<sub>2</sub>O:0-3000 sccm		*N<sub>2</sub>O:0-3000 sccm
	*NH<sub>3</sub>:0-1000 sccm		*NH<sub>3</sub>:0-1000 sccm

Bghe at 10:01, 24 March 2023

2023-03-24T10:01:38Z

← Older revision		Revision as of 12:01, 24 March 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/PECVD click here]''' <br>

	[[Category: Equipment\|Thin film PECVD]]		[[Category: Equipment\|Thin film PECVD]]
	[[Category: Thin Film Deposition\|PECVD]]		[[Category: Thin Film Deposition\|PECVD]]
	~~''This page is written by DTU Nanlab internal''~~		{{CC1}}

	==PECVD Plasma Enhanced Chemical Vapor Deposition==		==PECVD Plasma Enhanced Chemical Vapor Deposition==

Bghe: /* PECVD Plasma Enhanced Chemical Vapor Deposition */

2023-01-31T12:36:03Z

PECVD Plasma Enhanced Chemical Vapor Deposition

← Older revision		Revision as of 14:36, 31 January 2023
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	Name PECVD4: PRO CVD <br>		Name PECVD4: PRO CVD <br>
	Vendor: SPTS <br>		Vendor: SPTS <br>
	[[image:PECVD3a.jpg\|300x300px\|right\|thumb\|PECVD3 - positioned in cleanroom A-1]]		[[image:PECVD3a.jpg\|300x300px\|right\|thumb\|PECVD3 - positioned in cleanroom A-1, photo: DTU Nanolab internal]]
	[[image:PECVD4.JPG\|300x300px\|right\|thumb\|PECVD4 - positioned in cleanroom B-1]]		[[image:PECVD4.JPG\|300x300px\|right\|thumb\|PECVD4 - positioned in cleanroom B-1, photo: DTU Nanolab internal]]
	We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.		We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.

Bghe at 12:14, 31 January 2023

2023-01-31T12:14:25Z

← Older revision		Revision as of 14:14, 31 January 2023
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	[[Category: Equipment\|Thin film PECVD]]		[[Category: Equipment\|Thin film PECVD]]
	[[Category: Thin Film Deposition\|PECVD]]		[[Category: Thin Film Deposition\|PECVD]]
			''This page is written by DTU Nanlab internal''

	==PECVD Plasma Enhanced Chemical Vapor Deposition==		==PECVD Plasma Enhanced Chemical Vapor Deposition==
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	All though PECVD4 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.		All though PECVD4 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.

	'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:'''		'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager (requires login):'''
	<!-- remember to remove the type of documents that are not present -->		<!-- remember to remove the type of documents that are not present -->

Bghe: /* Overview of the performance of PECVD thin films and some process related parameters */

2022-08-29T12:46:38Z

Overview of the performance of PECVD thin films and some process related parameters

← Older revision		Revision as of 14:46, 29 August 2022
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	*Silicon oxynitride		*Silicon oxynitride
	*BPSG (Boron Phosphorous doped Silica Glass)		*BPSG (Boron Phosphorous doped Silica Glass)
			*aSi
	\|		\|
	*Silicon oxide		*Silicon oxide

Bghe at 12:46, 29 August 2022

2022-08-29T12:46:04Z

← Older revision		Revision as of 14:46, 29 August 2022
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	We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.		We have two PECVD's here at DTU Nanolab. They can both be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron and Phosphorus. PECVD3 can also deposit thin layer of aSi. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage, under some condition even more) of metals where as PECVD4 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD4 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.

	PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive species. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.		PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive species. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. PECVD films are however known for not being stochiometeric and normally a lot of hydrogen is incorporated inside the films.

	All though PECVD4 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.		All though PECVD4 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.