Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS - Revision history

Mmat: /* Overview of the performance of the LPCVD TEOS furnace and some process related parameters */

2025-06-20T20:30:58Z

Overview of the performance of the LPCVD TEOS furnace and some process related parameters

← Older revision		Revision as of 22:30, 20 June 2025
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	{\| border="2" cellspacing="0" cellpadding="10"		{\| border="2" cellspacing="0" cellpadding="10"
	\|-		\|-
	!colspan="2" border="none" style="background:silver; color:black;" align="center"\|Purpose		!colspan="2" border="none" style="background:silver; color:black" align="center"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|'''Deposition of TEOS oxide'''
	~~\|style="background:WhiteSmoke; color:black"\|~~
	Deposition of TEOS oxide
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Performance		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Performance

Mmat: /* Overview of the performance of the LPCVD TEOS furnace and some process related parameters */

2025-06-20T20:28:57Z

Overview of the performance of the LPCVD TEOS furnace and some process related parameters

← Older revision		Revision as of 22:28, 20 June 2025
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	==Overview of the performance of the LPCVD TEOS furnace and some process related parameters==		==Overview of the performance of the LPCVD TEOS furnace and some process related parameters==

	{\| border="2" cellspacing="0" cellpadding="0"		{\| border="2" cellspacing="0" cellpadding="10"
	\|-		\|-
	!style="background:silver; color:black;" align="center"\|Purpose		!colspan="2" border="none" style="background:silver; color:black;" align="center"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|

Mmat at 12:35, 17 June 2025

2025-06-17T12:35:55Z

← Older revision		Revision as of 14:35, 17 June 2025
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	More information about the TEOS oxide deposition process can be found here:		More information about the TEOS oxide deposition process can be found here:

	[[Specific Process Knowledge/Thin film deposition/~~Deposition of~~ TEOS~~/Deposition of TEOS using LPCVD~~\|Deposition of TEOS oxide using LPCVD]]		[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS\|Deposition of TEOS oxide using LPCVD]]

Mmat at 14:14, 6 March 2025

2025-03-06T14:14:56Z

← Older revision		Revision as of 16:14, 6 March 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_TEOS) click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_TEOS) click here]'''

	~~<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>~~

	[[Category: Equipment\|Thin film LPCVD TEOS]]		[[Category: Equipment\|Thin film LPCVD TEOS]]

Pevo: /* Overview of the performance of the LPCVD TEOS furnace and some process related parameters */

2025-01-10T13:55:54Z

Overview of the performance of the LPCVD TEOS furnace and some process related parameters

← Older revision		Revision as of 15:55, 10 January 2025
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	\|style="background:LightGrey; color:black"\|Gas flows		\|style="background:LightGrey; color:black"\|Gas flows
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*TEOS (tetraethoxysilane): ~50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, ~~but~~ the MFC is not calibrated for TEOS</i>		*TEOS (tetraethoxysilane): ~50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, because the MFC is not calibrated for TEOS</i>
	*O<sub>2</sub>: 0 sccm		*O<sub>2</sub>: 0 sccm
	\|-		\|-

Pevo: /* Overview of the performance of the LPCVD TEOS furnace and some process related parameters */

2025-01-10T13:24:50Z

Overview of the performance of the LPCVD TEOS furnace and some process related parameters

← Older revision		Revision as of 15:24, 10 January 2025
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	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~0 nm -~~ 3000 nm		*Up to 3000 nm
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Step coverage		\|style="background:LightGrey; color:black"\|Step coverage

Pevo: /* LPCVD TEOS oxide */

2025-01-10T13:18:43Z

LPCVD TEOS oxide

← Older revision		Revision as of 15:18, 10 January 2025
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	[[Category: Furnaces\|LPCVD TEOS]]		[[Category: Furnaces\|LPCVD TEOS]]

	==LPCVD TEOS ~~oxide~~==		==B3 LPCVD TEOS furnace==
	[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 LPCVD TEOS furnace. Positioned in cleanroom B-1]]		[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 LPCVD TEOS furnace. Positioned in cleanroom B-1]]

Pevo at 13:17, 10 January 2025

2025-01-10T13:17:57Z

← Older revision		Revision as of 15:17, 10 January 2025
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	==LPCVD TEOS oxide==		==LPCVD TEOS oxide==
	[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 ~~Furnace~~ LPCVD TEOS. Positioned in cleanroom B-1]]		[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 LPCVD TEOS furnace. Positioned in cleanroom B-1]]

	DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)".		DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)".

Pevo at 12:34, 10 January 2025

2025-01-10T12:34:01Z

Pevo: /* LPCVD TEOS oxide */

2025-01-10T12:30:04Z

LPCVD TEOS oxide

← Older revision		Revision as of 14:30, 10 January 2025
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	[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]		[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]

	DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace. The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4" wafers at a time.		DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)". The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4" wafers at a time.

	TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube).		TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube).

← Older revision		Revision as of 14:34, 10 January 2025
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	[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]		[[Image:160904_danchip_4538.jpg\|300x300px\|thumb\|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]

	DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)". The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4" wafers at a time.		DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace, in LabManager "Furnace: LPCVD TEOS (B3)".

			The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4" wafers at a time.

	TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube).		TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube).
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	It is possible to anneal TEOS oxide layers to increase the density and thus improve the electrical properties as well as the chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process.		It is possible to anneal TEOS oxide layers to increase the density and thus improve the electrical properties as well as the chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process.

	LPCVD TEOS oxide has an excellent step coverage and is very good for trench filling, however very small nanometer trenched and/or very deep trenches will be challenging to fill. The film thickness is very uniform ~~over each wafer~~.		LPCVD TEOS oxide has an excellent step coverage and is very good for trench filling, however very small nanometer trenched and/or very deep trenches will be challenging to fill. The film thickness over the wafers is very uniform.

	More information about the TEOS oxide deposition process can be found here:		More information about the TEOS oxide deposition process can be found here:
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	*[https://labmanager.dtu.dk/view_binary.php?class=MiscDocument&id=19&name=Furnace+computer+manual+April+2024.pdf See LabManager (requires a login)]		*[https://labmanager.dtu.dk/view_binary.php?class=MiscDocument&id=19&name=Furnace+computer+manual+April+2024.pdf See LabManager (requires a login)]

	==Process ~~Knowledge~~==		==Process knowledge==
	Please take a look at the process side for deposition of TEOS oxide:		Please take a look at the process side for deposition of TEOS oxide:

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	\|style="background:LightGrey; color:black"\|Gas flows		\|style="background:LightGrey; color:black"\|Gas flows
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*TEOS: ~50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, but the MFC is not calibrated for TEOS</i>		*TEOS (tetraethoxysilane): ~50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, but the MFC is not calibrated for TEOS</i>
	*O<sub>2</sub>: 0 sccm		*O<sub>2</sub>: 0 sccm
	\|-		\|-
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	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Silicon and fused silica/quartz wafers. <i>New wafers supplied by Nanolab, can to go directly into the furnace</i>		*Silicon and fused silica/quartz wafers. <i>New wafers supplied by Nanolab can to go directly into the furnace</i>
	*Wafers from the A stack, B stack and E stack furnaces. <i> The wafers have to go directly into the furnace </i>		*Wafers from the A stack, B stack and E stack furnaces. <i> The wafers have to go directly into the furnace </i>
	*Processed wafers (only allowed materials - see the cross contamination information in LabManager). <i> The wafers have to be RCA cleaned </i>		*Processed wafers (only allowed materials - see the cross contamination information in LabManager). <i> The wafers have to be RCA cleaned </i>