Specific Process Knowledge/Thin film deposition/Depositionof NbTi - Revision history

Eves: Replaced content with "Delete it!"

2025-07-30T16:13:30Z

Replaced content with "Delete it!"

Eves: /* Sputter deposition of Niobium Nitride */

2025-07-30T16:12:51Z

Sputter deposition of Niobium Nitride

← Older revision		Revision as of 18:12, 30 July 2025
Line 11:		Line 11:
	Users can deposit NbTi in either the Sputter-System (Lesker) or the Sputter-System Metal-Nitride(PC3) (Preferable option)		Users can deposit NbTi in either the Sputter-System (Lesker) or the Sputter-System Metal-Nitride(PC3) (Preferable option)

	* [[Specific Process Knowledge/Thin film deposition/Depositionof NbTi in Sputter-System Metal-Nitride PC3/\|Deposition of NbTi in Sputter-System Metal-Nitride(PC3)]]		* [[Specific Process Knowledge/Thin film deposition/Depositionof NbTi/Deposition of NbTi in Sputter-System Metal-Nitride PC3/\|Deposition of NbTi in Sputter-System Metal-Nitride(PC3)]]

	==Comparison of sputter systems for alloy deposition==		==Comparison of sputter systems for alloy deposition==

Eves: /* Comparison of sputter systems for alloy deposition */

2025-07-30T16:10:47Z

Comparison of sputter systems for alloy deposition

← Older revision		Revision as of 18:10, 30 July 2025
Line 40:		Line 40:
	\|		\|
	*NbTi (Sputter-System Metal-Nitride(PC3))		*NbTi (Sputter-System Metal-Nitride(PC3))
	~~Tunable composition~~		NbTi 67/33 At.% (4" target)
	\|		\|
	*Unknown		*Unknown
Line 50:		Line 50:
	\|		\|
	*Limited by process time.		*Limited by process time.
	*Deposition rate (0.18 nm/s) likely faster than Sputter-System (Lesker)		*Deposition rate (0.67 nm/s) likely faster than Sputter-System (Lesker)

	\|		\|

Eves: /* Comparison of sputter systems for alloy deposition */

2025-07-30T16:07:24Z

Comparison of sputter systems for alloy deposition

← Older revision		Revision as of 18:07, 30 July 2025
Line 29:		Line 29:
	!Generel description		!Generel description
	\|		\|
	*Pulsed DC ~~reactive sputtering~~		*DC/Pulsed DC
	*~~Reactive~~ HIPIMS (high-power impulse magnetron sputtering) (require 3-inch target)		*HIPIMS (high-power impulse magnetron sputtering) (require 3-inch target)
	\|		\|
	*~~Reactive~~ DC sputtering (not tested)		*DC sputtering (not tested)
	\|-		\|-

Line 39:		Line 39:
	!Stoichiometry		!Stoichiometry
	\|		\|
	*~~Nb<sub>x</sub>T<sub>y</sub>N~~ (Sputter-System Metal-Nitride(PC3))		*NbTi (Sputter-System Metal-Nitride(PC3))
	Tunable composition		Tunable composition
	\|		\|

Eves at 16:06, 30 July 2025

2025-07-30T16:06:11Z

← Older revision		Revision as of 18:06, 30 July 2025
Line 1:		Line 1:
			=Niobium Nitride=

			Niobium–titanium (Nb‑Ti) is a ductile, readily machinable alloy that merges niobium’s superconductivity with titanium’s strength, yielding a rigid, corrosion‑resistant material valued in cryogenic and high‑field environments.
			Thin films are produced chiefly by magnetron sputtering, where the Nb/Ti ratio and post‑anneal determine phase purity, resistivity, and the superconducting critical temperature (≈ 9.2 K for near‑eutectic compositions).
			In microelectronics, Nb‑Ti can act as a robust diffusion barrier, gate or contact metal, and mechanically compliant liner. Yet, its signature role is as a superconductor: kilometer-length multifilament Nb-Ti wires carry mega-ampere currents in MRI scanners, particle-accelerator magnets, and experimental fusion coils under magnetic fields approaching 10 T.
			Ultrathin Nb‑Ti nanowires serve in superconducting nanowire single‑photon detectors, kinetic‑inductance detectors, and low‑loss microwave resonators, while Nb‑Ti/Al bilayers enable Josephson junctions and rapid single‑flux‑quantum circuits.
			The alloy’s radiation tolerance, thermal stability, and moderate atomic number support cryogenic beam‑line components and X‑ray filters, and its biocompatibility and wear resistance extend its usefulness to medical implants and protective MEMS coatings, underscoring Nb‑Ti’s versatility wherever robust, easily processed superconducting or barrier films are required.

			==Sputter deposition of Niobium Nitride==

			Users can deposit NbTi in either the Sputter-System (Lesker) or the Sputter-System Metal-Nitride(PC3) (Preferable option)

			* [[Specific Process Knowledge/Thin film deposition/Depositionof NbTi in Sputter-System Metal-Nitride PC3/\|Deposition of NbTi in Sputter-System Metal-Nitride(PC3)]]

	==Comparison of sputter systems for alloy deposition==		==Comparison of sputter systems for alloy deposition==

Eves: /* Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition */

2025-07-30T16:00:19Z

Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition

← Older revision		Revision as of 18:00, 30 July 2025
Line 1:		Line 1:
	==Comparison of ~~LPCVD, PECVD, and~~ sputter systems for ~~silicon nitride~~ deposition==		==Comparison of sputter systems for alloy deposition==

	{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"

Eves: Created page with "==Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition== {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" |- |- |-style="background:silver; color:black" ! !Sputter-System Metal-Nitride(PC3) !Lesker sputter system |- |- |-style="background:White..."

2025-07-30T15:59:08Z

Created page with "==Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition== {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" |- |- |-style="background:silver; color:black" ! !Sputter-System Metal-Nitride(PC3) !Lesker sputter system |- |- |-style="background:White..."

New page

==Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition==

{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-

|-
|-style="background:silver; color:black"
!
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Nitride(PC3)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputter system]]
|-

|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering) (require 3-inch target)
|
*Reactive DC sputtering (not tested)
|-

|-
|-style="background:LightGrey; color:black"
!Stoichiometry
|
*NbxTyN (Sputter-System Metal-Nitride(PC3))
Tunable composition
|
*Unknown
|-

|-
|-style="background:WhiteSmoke; color:black"
!Film thickness
|
*Limited by process time.
*Deposition rate (0.18 nm/s) likely faster than Sputter-System (Lesker)

|
*Limited by process time.
*Deposition rate unknown
|-

|-
|-style="background:LightGrey; color:black"
!Process temperature
|
*Up to 600 °C
|
*Up to 400 °C
|-

|-
|-style="background:WhiteSmoke; color:black"
!Step coverage
|
*Some step coverage possible
|
*Some step coverage possible but amount unknown
|-

|-
|-style="background:LightGrey; color:black"
!Film quality
|
*Deposition on one side of the substrate
*Properties including tunable stoichiometry (requires process development)
|
*Deposition on one side of the substrate
*Unknown quality
*Likely O-contamination
|-

|-
|-style="background:WhiteSmoke; color:black"
!Batch size
|
*Many smaller samples
*Up to 10*100 mm or 150 mm wafers
|
*Several smaller samples
*1-several 50 mm wafers
*1*100 mm wafers
*1*150 mm wafer
|-

|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
|
*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
|-
|}