Specific Process Knowledge/Thin film deposition/Deposition of V3Si - Revision history

Eves: /* Deposition of Vanadium Silicide */

2026-10-13T18:00:20Z

Deposition of Vanadium Silicide

← Older revision		Revision as of 19:00, 13 October 2026
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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study. Use only as inspiration!		* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study. Use with care and only as inspiration!

	==Comparison of sputter systems for V<sub>3</sub>Si deposition==		==Comparison of sputter systems for V<sub>3</sub>Si deposition==

Eves: /* Deposition of Vanadium Silicide */

2026-10-13T17:59:59Z

Deposition of Vanadium Silicide

← Older revision		Revision as of 18:59, 13 October 2026
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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]] - Recommended approach.		* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]] - <b>Recommended approach.</b>

Eves: /* Deposition of Vanadium Silicide */

2026-10-13T17:33:28Z

Deposition of Vanadium Silicide

← Older revision		Revision as of 18:33, 13 October 2026
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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study.		* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study. Use only as inspiration!

	==Comparison of sputter systems for V<sub>3</sub>Si deposition==		==Comparison of sputter systems for V<sub>3</sub>Si deposition==

Eves: /* Deposition of Vanadium Silicide */

2026-10-13T17:29:43Z

Deposition of Vanadium Silicide

← Older revision		Revision as of 18:29, 13 October 2026
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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]]		* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]] - Recommended approach.



	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study		* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study.

	==Comparison of sputter systems for V<sub>3</sub>Si deposition==		==Comparison of sputter systems for V<sub>3</sub>Si deposition==

Eves: /* Deposition of Vanadium Silicide */

2026-10-13T17:29:25Z

Deposition of Vanadium Silicide

← Older revision		Revision as of 18:29, 13 October 2026
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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]]		* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]]

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]]

			* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study

	==Comparison of sputter systems for V<sub>3</sub>Si deposition==		==Comparison of sputter systems for V<sub>3</sub>Si deposition==

Eves: /* Deposition of Vanadium Silicide */

2026-10-13T17:29:00Z

Deposition of Vanadium Silicide

← Older revision		Revision as of 18:29, 13 October 2026
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	At DTU Nanolab, V<sub>3</sub>Si thin films are developed by RF-DC co-sputtering from separate elemental V and Si targets in an Ar atmosphere. Independent control of the two sources makes it possible to tune the V/Si arrival-rate ratio, while substrate temperature and optional RF substrate bias provide additional control over film density, crystallinity and net deposition rate.		At DTU Nanolab, V<sub>3</sub>Si thin films are developed by RF-DC co-sputtering from separate elemental V and Si targets in an Ar atmosphere. Independent control of the two sources makes it possible to tune the V/Si arrival-rate ratio, while substrate temperature and optional RF substrate bias provide additional control over film density, crystallinity and net deposition rate.

	The preferred tool for this application is ~~the~~ cluster-based multi-chamber high-vacuum sputtering system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The characterized PC1 process is described in detail here:		The preferred tool for this application is a cluster-based, multi-chamber, high-vacuum sputtering system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The characterized PC1 process is described in detail here:


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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]]		* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]]

			* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]]

	As of ~~October 2026, the characterized PC1 process uses a 3-inch V target and a 3-inch Si target. The present process~~-~~development series used 145 W~~ DC on V, 120 W RF on Si, 3 mTorr Ar, substrate temperatures from room temperature to 500 °C, and optional 30 W RF substrate bias. Target availability and source configuration should always be confirmed before planning a run.

	~~The required elemental thickness~~-~~rate ratio is not 3:1. After accounting for the molar masses and bulk densities of V and Si, a stoichiometric atomic arrival ratio~~ of ~~V:Si = 3:1 corresponds to an approximate elemental thickness-rate ratio <i>r</i><sub>~~V</sub>~~/<i>r~~</~~i><~~sub>Si~~</sub> = 2.07. The characterized process was deliberately adjusted slightly toward the V~~-~~rich side, approximately 2.2~~-~~2.3~~, ~~to reduce~~ the ~~risk of forming Si-rich VSi<sub>~~2~~</sub>. These calculated rates are starting values;~~ the ~~resulting phase and composition must be verified experimentally.~~

	==Comparison of sputter systems for V<sub>3</sub>Si deposition==		==Comparison of sputter systems for V<sub>3</sub>Si deposition==

Eves at 17:27, 13 October 2026

2026-10-13T17:27:02Z

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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_V3Si&action=submit click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_V3Si&action=submit click here]'''

			=Vanadium Silicide (V<sub>3</sub>Si)=

			Vanadium silicide, V<sub>3</sub>Si, is a metallic intermetallic compound with the cubic A15 crystal structure. It is one of the classic A15 superconductors and combines a relatively high superconducting transition temperature with high critical current density and a high upper critical magnetic field. These properties depend strongly on the V/Si ratio, A15 chemical ordering, crystalline quality, strain, film thickness, interfaces and oxygen contamination.

			A particularly important property of V<sub>3</sub>Si is its superconductivity. Well-ordered bulk material can exhibit a superconducting transition temperature, <i>T</i><sub>c</sub>, close to 17 K. Thin-film values are often lower and depend on deposition and annealing conditions; values above 13 K have nevertheless been demonstrated in silicon-compatible structures. Achieving a low and narrow transition requires formation of the A15 phase while limiting competing phases such as Si-rich VSi<sub>2</sub>, unreacted V and oxygen-containing compounds.

			V<sub>3</sub>Si is therefore of interest for superconducting and quantum technologies, particularly where compatibility with silicon processing is important. Possible applications include superconducting interconnects, Josephson junctions, superconducting quantum interference devices (SQUIDs), microwave and kinetic-inductance structures, and other cryogenic components for silicon-integrated quantum circuits. Its relatively high <i>T</i><sub>c</sub> and critical field are attractive, but low microwave loss, reproducible interfaces, patterning behaviour and coherence performance must be demonstrated before V<sub>3</sub>Si can be considered a mature quantum-circuit material. It remains less established for quantum devices than Al, Nb, NbN, NbTiN or TiN.

			Outside quantum-device research, V<sub>3</sub>Si is also studied for superconducting radio-frequency components, high-field superconducting structures and fundamental investigations of A15 superconductivity. In every application, a room-temperature metallic resistance or a V<sub>3</sub>Si-like diffraction pattern is not by itself proof of superconductivity. Temperature-dependent electrical measurements through <i>T</i><sub>c</sub>, preferably together with critical-current and magnetic-field measurements, are required.

			==Deposition of Vanadium Silicide==

			At DTU Nanolab, V<sub>3</sub>Si thin films are developed by RF-DC co-sputtering from separate elemental V and Si targets in an Ar atmosphere. Independent control of the two sources makes it possible to tune the V/Si arrival-rate ratio, while substrate temperature and optional RF substrate bias provide additional control over film density, crystallinity and net deposition rate.

			The preferred tool for this application is the cluster-based multi-chamber high-vacuum sputtering system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The characterized PC1 process is described in detail here:



			* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1\|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]]



			As of October 2026, the characterized PC1 process uses a 3-inch V target and a 3-inch Si target. The present process-development series used 145 W DC on V, 120 W RF on Si, 3 mTorr Ar, substrate temperatures from room temperature to 500 °C, and optional 30 W RF substrate bias. Target availability and source configuration should always be confirmed before planning a run.

			The required elemental thickness-rate ratio is not 3:1. After accounting for the molar masses and bulk densities of V and Si, a stoichiometric atomic arrival ratio of V:Si = 3:1 corresponds to an approximate elemental thickness-rate ratio <i>r</i><sub>V</sub>/<i>r</i><sub>Si</sub> = 2.07. The characterized process was deliberately adjusted slightly toward the V-rich side, approximately 2.2-2.3, to reduce the risk of forming Si-rich VSi<sub>2</sub>. These calculated rates are starting values; the resulting phase and composition must be verified experimentally.

			==Comparison of sputter systems for V<sub>3</sub>Si deposition==

			{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
			\|-

			\|-
			\|-style="background:silver; color:black"
			!
			![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-System Metal-Oxide (PC1)]]
			![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-System Metal-Nitride (PC3)]]
			\|-

			\|-
			\|-style="background:WhiteSmoke; color:black"
			!General description
			\|
			*RF-DC co-sputtering from independent Si and V targets
			*Optional RF substrate bias
			*Characterized V<sub>3</sub>Si process available
			\|
			*RF-DC co-sputtering is technically possible
			*Process parameters require separate qualification
			\|-

			\|-
			\|-style="background:LightGrey; color:black"
			!Stoichiometry
			\|
			*Tunable through the independently calibrated V and Si deposition rates
			\|
			*Tunable through the independently calibrated V and Si deposition rates
			\|-

			\|-
			\|-style="background:WhiteSmoke; color:black"
			!Film thickness
			\|
			*Limited by process time
			*The characterized series produced approximately 100-120 nm in 1600 s; RF bias reduced the net thickness

			\|
			*Limited by process time
			*Deposition rate depends on the selected V and Si powers and must be calibrated for the source configuration
			\|-

			\|-
			\|-style="background:LightGrey; color:black"
			!Process temperature
			\|
			*Up to 600 °C
			\|
			*Up to 600 °C
			\|-

			\|-
			\|-style="background:WhiteSmoke; color:black"
			!Step coverage
			\|
			*Some step coverage possible
			\|
			*Some step coverage possible
			\|-

			\|-
			\|-style="background:LightGrey; color:black"
			!Film quality
			\|
			*Deposition on one side of the substrate
			*Composition, A15 phase formation, density and resistivity depend on power ratio, temperature and substrate bias
			\|
			*Deposition on one side of the substrate
			*Composition and phase formation require process development and characterization
			\|-

			\|-
			\|-style="background:WhiteSmoke; color:black"
			!Batch size
			\|
			*Many smaller samples
			*Up to ten 100 mm or 150 mm wafers
			\|
			*Many smaller samples
			*Up to ten 100 mm or 150 mm wafers
			\|-

			\|-
			\|-style="background:LightGrey; color:black"
			!'''Allowed materials'''
			\|
			*Most vacuum-compatible materials, provided that they do not outgas significantly and are not highly toxic; see the cross-contamination sheets
			\|
			*Most vacuum-compatible materials, provided that they do not outgas significantly and are not highly toxic; see the cross-contamination sheets
			\|-
			\|}

			<br clear="all" />

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2026-10-13T17:22:59Z

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