Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride - Revision history

Eves: /* Tungsten Nitride (WNx) */

2025-07-30T17:05:49Z

Tungsten Nitride (WNx)

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	Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness, and good electrical conductivity in a composition‑tunable, CMOS‑compatible matrix.		Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness, and good electrical conductivity in a composition‑tunable, CMOS‑compatible matrix.
	Thin films are produced chiefly by reactive magnetron ~~sputtering—where~~ nitrogen flow and substrate temperature set stoichiometry and ~~phase—and by e‑beam evaporation of tungsten in a reactive nitrogen ambient~~, yielding dense layers with controllable resistivity and stress.		Thin films are produced chiefly by reactive magnetron sputtering, where nitrogen flow and substrate temperature set stoichiometry and phase, yielding dense layers with controllable resistivity and stress.
	In semiconductor process flows, WNₓ acts as a robust Cu diffusion barrier/liner, hard mask, gate or contact material, and precision thin‑film resistor; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks and a candidate for x‑ray mask blanks.		In semiconductor process flows, WNₓ acts as a robust Cu diffusion barrier/liner, hard mask, gate or contact material, and precision thin‑film resistor; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks and a candidate for x‑ray mask blanks.
	Optically, WN-based stacks offer durable, high-temperature plasmonic and thermally emissive coatings, mid-IR absorbers, and multilayer structures for soft-x-ray mirrors and synchrotron beamline optics, delivering stability far beyond noble metals under extreme photon flux.		Optically, WN-based stacks offer durable, high-temperature plasmonic and thermally emissive coatings, mid-IR absorbers, and multilayer structures for soft-x-ray mirrors and synchrotron beamline optics, delivering stability far beyond noble metals under extreme photon flux.

Eves: /* Deposition of Tungsten Nitride */

2025-07-30T16:55:02Z

Deposition of Tungsten Nitride

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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)



	At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1.		At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1.

Eves: /* Deposition of Tungsten Nitride */

2025-07-30T16:54:52Z

Deposition of Tungsten Nitride

← Older revision		Revision as of 18:54, 30 July 2025
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	The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The operating process is described in detail.:		The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The operating process is described in detail.:



	* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)

Eves: /* Deposition of Tungsten Nitride */

2025-07-30T16:54:39Z

Deposition of Tungsten Nitride

← Older revision		Revision as of 18:54, 30 July 2025
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	Deposition of WN<sub>x</sub> can only be done by reactive sputtering using W target.		Deposition of WN<sub>x</sub> can only be done by reactive sputtering using W target.

	The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is described in detail.:		The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The operating process is described in detail.:

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)

	At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1.		At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1.


	==Comparison of sputter systems for reactive deposition==		==Comparison of sputter systems for reactive deposition==

Eves: /* Comparison of sputter systems for reactive deposition */

2025-07-30T16:53:31Z

Comparison of sputter systems for reactive deposition

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	\|		\|
	*Limited by process time.		*Limited by process time.
	*Deposition rate (0.6 nm/s) is likely faster than Sputter-System (Lesker)		*Deposition rate (0.2 nm/s) is likely faster than Sputter-System (Lesker)

	\|		\|

Eves: /* Deposition of Tungsten Nitride */

2025-07-30T16:53:10Z

Deposition of Tungsten Nitride

Show changes

Eves: /* Deposition of Tungsten Nitride */

2025-07-30T16:49:14Z

Deposition of Tungsten Nitride

← Older revision		Revision as of 18:49, 30 July 2025
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	== Deposition of Tungsten Nitride ==		== Deposition of Tungsten Nitride ==

	Deposition of WN can only be done by reactive sputtering using W target.		Deposition of WN<sub>x</sub> can only be done by reactive sputtering using W target.

	The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is described in detail.:		The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is described in detail.:
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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)

	At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 ~~orPC1~~		At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1.

Eves: /* Deposition of Scandium Nitride */

2025-07-30T16:48:38Z

Deposition of Scandium Nitride

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	Beyond electronics and photonics, the material’s wear and oxidation resistance support MEMS springs, high‑temperature sensors, and corrosion‑resistant coatings, while select WN phases become superconducting below roughly 3–5 K, enabling niche low‑loss microwave resonators and detector elements that benefit from its mechanical robustness and diffusion‑barrier capability.		Beyond electronics and photonics, the material’s wear and oxidation resistance support MEMS springs, high‑temperature sensors, and corrosion‑resistant coatings, while select WN phases become superconducting below roughly 3–5 K, enabling niche low‑loss microwave resonators and detector elements that benefit from its mechanical robustness and diffusion‑barrier capability.

	== Deposition of ~~Scandium~~ Nitride ==		== Deposition of Tungsten Nitride ==

	Deposition of WN can only be done by reactive sputtering using W target.		Deposition of WN can only be done by reactive sputtering using W target.

Eves: /* Deposition of Scandium Nitride */

2025-07-30T16:46:34Z

Deposition of Scandium Nitride

← Older revision		Revision as of 18:46, 30 July 2025
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	== Deposition of Scandium Nitride ==		== Deposition of Scandium Nitride ==

	Deposition of ~~ScN~~ can only be done by reactive sputtering using Sc target.		Deposition of WN can only be done by reactive sputtering using W target.

	The ~~only~~ tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is ~~thoroughly documented and~~ described in detail.:		The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is described in detail.:

	* [[Specific Process Knowledge/Thin film deposition/Deposition of ~~Scandium~~ Nitride/~~ScN~~ Reactive Sputtering in Cluster Lesker PC3\|Deposition of ~~Scandium~~ Nitride (~~ScN~~) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)

	At the moment (~~October 2023~~) we have a 4-inch Sc target (0.~~250~~" thick, bonded to Cu) for PC3 ~~Src1.~~		At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 orPC1

Eves: /* Tungsten Nitride (WNx) */

2025-07-30T16:44:17Z

Tungsten Nitride (WNx)

← Older revision		Revision as of 18:44, 30 July 2025
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	=Tungsten Nitride (WN<sub>x</sub>)=		=Tungsten Nitride (WN<sub>x</sub>)=

	~~Scandium nitride~~ (~~ScN~~) is a ~~rocksalt‑structure semiconductor with an indirect bandgap near 0.9 eV and a direct transition around 2.1 eV~~, ~~combining high electron mobility~~, ~~excellent thermal stability~~, and ~~notable hardness~~ in a ~~chemically inert~~ matrix.		Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness, and good electrical conductivity in a composition‑tunable, CMOS‑compatible matrix.
	~~It is deposited~~ by reactive magnetron ~~sputtering for dense, textured films~~ and by ~~atomic layer deposition (ALD) when ultra-conformal~~, ~~thickness-precise coatings are required on high-aspect-ratio or temperature-sensitive structures~~.		Thin films are produced chiefly by reactive magnetron sputtering—where nitrogen flow and substrate temperature set stoichiometry and phase—and by e‑beam evaporation of tungsten in a reactive nitrogen ambient, yielding dense layers with controllable resistivity and stress.
	In ~~microelectronics~~, ~~ScN functions~~ as a diffusion barrier ~~or seed layer~~, ~~a lattice‑matched buffer for GaN/AlGaN power devices~~, ~~and an emerging channel~~ or contact material ~~for high‑mobility transistors and thermoelectric modules.~~		In semiconductor process flows, WNₓ acts as a robust Cu diffusion barrier/liner, hard mask, gate or contact material, and precision thin‑film resistor; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks and a candidate for x‑ray mask blanks.
	~~During reactive sputtering of AlN, elemental Sc is routinely co‑sputtered to form Al₁₋ₓScₓN~~, ~~whose enhanced piezoelectric coefficients~~ and ~~ferroelectric phases enable next‑generation MEMS resonators, RF filters,~~ and ~~non‑volatile FeFET memories~~.		Optically, WN-based stacks offer durable, high-temperature plasmonic and thermally emissive coatings, mid-IR absorbers, and multilayer structures for soft-x-ray mirrors and synchrotron beamline optics, delivering stability far beyond noble metals under extreme photon flux.
	Optically, ~~ScN’s tunable plasma frequency supports near‑IR plasmonics~~, ~~hot‑carrier photodetectors~~, ~~and durable high‑temperature~~ absorbers, ~~while doped ScN shows adjustable n‑type conductivity~~ and ~~potential room‑temperature ferromagnetism~~ for ~~spintronic devices~~.		Beyond electronics and photonics, the material’s wear and oxidation resistance support MEMS springs, high‑temperature sensors, and corrosion‑resistant coatings, while select WN phases become superconducting below roughly 3–5 K, enabling niche low‑loss microwave resonators and detector elements that benefit from its mechanical robustness and diffusion‑barrier capability.
	~~Its high hardness~~, oxidation resistance, and ~~decent thermal conductivity further suit ScN for protective~~ coatings, ~~MEMS layers~~, and ~~thermoelectric power generators in harsh environments, underscoring~~ its ~~versatility across semiconductor, photonic,~~ and ~~engineering applications~~.

	== Deposition of Scandium Nitride ==		== Deposition of Scandium Nitride ==