Specific Process Knowledge/Thin film deposition/Deposition of Tungsten - Revision history

Eves at 09:49, 29 July 2025

2025-07-29T09:49:07Z

← Older revision		Revision as of 11:49, 29 July 2025
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	<i> This page is written by <b>DTU Nanolab staff</b></i>		<i> This page is written by <b>DTU Nanolab staff</b></i>

	= Tungsten ~~deposition~~ =		=Tungsten (W)=

	~~Tungsten~~ (W) ~~can be deposited~~ by e-beam evaporation and ~~sputtering~~. ~~However~~, in ~~case of evaporation~~ the ~~process generates a lot of heat, so it is not easy~~ to ~~deposit films much thicker than 50~~-~~60 nm~~. ~~Sputtering can be used without any particular issues~~. ~~In the chart below you can compare the deposition equipment~~.		Tungsten (W) is a refractory metal with the highest melting point of any element, remarkable density, hardness, and outstanding resistance to radiation and corrosion, making it indispensable in semiconductor, optical, and harsh‑environment technologies.
			Thin films are produced primarily by magnetron sputtering or e-beam evaporation, yielding dense, low-resistivity body-centered-cubic α-W when pressure, substrate temperature, and energy are adequately controlled.
			Within semiconductor process flows, α‑W serves as a robust diffusion‑barrier/liner, gate or contact metal, and reliable via/plug fill for logic, memory, and power devices operating at elevated temperatures.
			In optics, the metal’s high atomic number and thermal stability underpin multilayer W/Si or W/C stacks used in X‑ray mirrors—such as Göbel mirrors, Kirkpatrick–Baez optics, synchrotron beamline monochromators, and space‑borne telescope coatings—delivering high reflectivity and power‑handling in the soft-to-hard-X-ray range.
			α‑W also supports high‑temperature plasmonic and thermally emissive coatings, mid‑IR absorbers, and durable metamaterial surfaces that endure far greater power densities than noble metals.
			Beyond electronics and photonics, tungsten’s mechanical strength and radiation tolerance enable MEMS springs, X‑ray/EUV shielding, high‑temperature sensors, and dense protective components; moreover, α‑W becomes superconducting at millikelvin temperatures, allowing niche low‑loss microwave resonators and detector elements where extreme stability is required.

	==Evaporation of W==		== Tungsten deposition ==

			Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in the case of evaporation, the process generates a lot of heat, so it is not easy to deposit films much thicker than 50-60 nm. Sputtering can be used without any particular issues. In the chart below, you can compare the deposition equipment.

			===Evaporation of W===

	*[[/Evaporation of W in Temescal\|E-beam evaporation of Tungsten in the Temescal]]		*[[/Evaporation of W in Temescal\|E-beam evaporation of Tungsten in the Temescal]]

	==Sputtering of W==		===Sputtering of W===

	*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]		*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]

Reet at 22:08, 7 July 2025

2025-07-07T22:08:27Z

← Older revision		Revision as of 00:08, 8 July 2025
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten click here]'''

	<i> ~~Unless otherwise stated, this~~ page is written by <b>DTU Nanolab ~~internal~~</b></i>		<i> This page is written by <b>DTU Nanolab staff</b></i>

	= Tungsten deposition =		= Tungsten deposition =

Reet: /* Tungsten deposition */

2025-07-07T22:05:33Z

Tungsten deposition

← Older revision		Revision as of 00:05, 8 July 2025
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	= Tungsten deposition =		= Tungsten deposition =

	Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the ~~precess~~ generates a lot of heat ~~(despite water cooling)~~, ~~and this means the pressure rises as the chamber~~ is ~~baking out. It is therefore~~ not easy to deposit films much thicker than 50-60 nm. Sputtering can be used without any particular issues. In the chart below you can compare the deposition equipment.		Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the process generates a lot of heat, so it is not easy to deposit films much thicker than 50-60 nm. Sputtering can be used without any particular issues. In the chart below you can compare the deposition equipment.

	==Evaporation of W==		==Evaporation of W==

Reet: /* Tungsten deposition */

2025-07-07T22:05:01Z

Tungsten deposition

← Older revision		Revision as of 00:05, 8 July 2025
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	= Tungsten deposition =		= Tungsten deposition =

	Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk). Sputtering can be used without any ~~sufficient~~ issues. In the chart below you can compare the deposition equipment.		Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. Sputtering can be used without any particular issues. In the chart below you can compare the deposition equipment.

	==Evaporation of W==		==Evaporation of W==

Eves at 16:13, 1 February 2023

2023-02-01T16:13:03Z

← Older revision		Revision as of 18:13, 1 February 2023
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	'''Feedback to this page''': '''[mailto:~~pvd~~@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php~~?title=~~Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten~~&action=edit~~ click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten click here]'''

			<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>

	= Tungsten deposition =		= Tungsten deposition =

Eves at 13:55, 2 January 2023

2023-01-02T13:55:09Z

← Older revision		Revision as of 15:55, 2 January 2023
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	Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk). Sputtering can be used without any sufficient issues. In the chart below you can compare the deposition equipment.		Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk). Sputtering can be used without any sufficient issues. In the chart below you can compare the deposition equipment.

			==Evaporation of W==

			*[[/Evaporation of W in Temescal\|E-beam evaporation of Tungsten in the Temescal]]

	==Sputtering of W==		==Sputtering of W==

	*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]		*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]
	*[[/Evaporation of W in Temescal\|E-beam evaporation of Tungsten in the Temescal]]
	*[[/DC Sputtering of W in Sputter-System (Lesker)\|DC Sputtering of Tungsten in the Sputter-System (Lesker)]]		*[[/DC Sputtering of W in Sputter-System (Lesker)\|DC Sputtering of Tungsten in the Sputter-System (Lesker)]]
	*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]		*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]

Eves: /* Sputtering of W */

2023-01-02T13:48:28Z

Sputtering of W

← Older revision		Revision as of 15:48, 2 January 2023
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	*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]		*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]
	*[[/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3)\|HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]		*[[/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3)\|HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]



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Eves: /* Sputtering of W */

2023-01-02T13:48:20Z

Sputtering of W

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	*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]		*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]
			*[[/Evaporation of W in Temescal\|E-beam evaporation of Tungsten in the Temescal]]
			*[[/DC Sputtering of W in Sputter-System (Lesker)\|DC Sputtering of Tungsten in the Sputter-System (Lesker)]]
			*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]
			*[[/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3)\|HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]

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Eves: /* Sputtering of W */

2023-01-02T13:42:14Z

Sputtering of W

← Older revision		Revision as of 15:42, 2 January 2023
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	(for a 60 nm film it rose above 123 C)		(for a 60 nm film it rose above 123 C)

	Wait for low base pressure (3-5 10<sup>-7</sup> Torr)		Wait for low base pressure before start (3-5 10<sup>-7</sup> Torr)
	\|Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC)		\|Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC)
	\|Deposition rate is 0.124 nm/s for 140W and 3mTorr (PC3, Src3 DC),		\|Deposition rate is 0.124 nm/s for 140W and 3mTorr (PC3, Src3 DC),

Eves: /* Sputtering of W */

2023-01-02T13:41:12Z

Sputtering of W

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	(0.04 nm/s using HiPIMS - PC3, Src3)		(0.04 nm/s using HiPIMS - PC3, Src3)
	\|Note! ~~bad~~ uniformity		\|Note! Bad uniformity.
	Deposition rate is 0.03 nm/s using big glass chamber
	Deposition rate is 0.2-0.9 nm/s (current dependent) using small glass chamber		Deposition rate is 0.03 nm/s using big glass chamber.

			Deposition rate is 0.2-0.9 nm/s (current dependent) using small glass chamber.
	\|}		\|}

	'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.''		'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.''

← Older revision		Revision as of 15:48, 2 January 2023
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	*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]		*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]
	*[[/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3)\|HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]		*[[/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3)\|HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]



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← Older revision		Revision as of 15:48, 2 January 2023
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	*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]		*[[/Sputtering of W in Sputter Coater 3\|Sputtering of Tungsten in the Sputter Coater 3]]
			*[[/Evaporation of W in Temescal\|E-beam evaporation of Tungsten in the Temescal]]
			*[[/DC Sputtering of W in Sputter-System (Lesker)\|DC Sputtering of Tungsten in the Sputter-System (Lesker)]]
			*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)\|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]
			*[[/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3)\|HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]]

	{\| border="1" cellspacing="0" cellpadding="4"		{\| border="1" cellspacing="0" cellpadding="4"