Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide - Revision history

Reet: /* Comparison of the methods for deposition of Titanium Oxide */

2025-08-28T07:03:57Z

Comparison of the methods for deposition of Titanium Oxide

← Older revision		Revision as of 09:03, 28 August 2025
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	!Generel description		!Generel description
	\|		\|
	*Evaporation of Ti or ~~TiO~~<sub>2</sub> pellets in the presence of a O<sub>2</sub> ~~flow~~.		*Evaporation of Ti or Ti<sub>2</sub>O<sub>3</sub> pellets in the presence of O<sub>2</sub>.
	*Can heat up to 250 °C		*Can heat up to 250 °C.
	\|		\|
	*Reactive DC sputtering of Ti target		*Reactive DC sputtering of Ti target

Reet: /* Comparison of the methods for deposition of Titanium Oxide */

2024-08-29T09:46:41Z

Comparison of the methods for deposition of Titanium Oxide

← Older revision		Revision as of 11:46, 29 August 2024
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	!Generel description		!Generel description
	\|		\|
	*Evaporation of Ti or TiO<sub>2</sub> pellets in the presence of a O<sub>2</sub> flow.		*Evaporation of Ti or TiO<sub>2</sub> pellets in the presence of a O<sub>2</sub> flow.
			*Can heat up to 250 °C
	\|		\|
	*Reactive DC sputtering of Ti target		*Reactive DC sputtering of Ti target
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	*Reactive pulsed DC sputtering		*Reactive pulsed DC sputtering
	*Reactive HIPIMS (high-power impulse magnetron sputtering)		*Reactive HIPIMS (high-power impulse magnetron sputtering)
			*Can heat up to 6000 °C
	\|		\|
	*Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma		*Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma
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	\|		\|
	*ALD (atomic layer deposition) of TiO<sub>2</sub>		*ALD (atomic layer deposition) of TiO<sub>2</sub>
			*Can heat up to 350 °C
	\|-		\|-

Reet: /* Comparison of the methods for deposition of Titanium Oxide */

2024-08-29T09:45:18Z

Comparison of the methods for deposition of Titanium Oxide

← Older revision		Revision as of 11:45, 29 August 2024
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	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	!Stoichiometry		!Stoichiometry and form
	\|		\|
	*Can probably be varied, expect somewhat O-poor composition		*Can probably be varied, expect somewhat O-poor composition

Reet: /* Comparison of the methods for deposition of Titanium Oxide */

2024-07-04T11:11:03Z

Comparison of the methods for deposition of Titanium Oxide

← Older revision		Revision as of 13:11, 4 July 2024
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	!Generel description		!Generel description
	\|		\|
	*Evaporation of Ti pellets in the presence of a O<sub>2</sub> flow.		*Evaporation of Ti or TiO<sub>2</sub> pellets in the presence of a O<sub>2</sub> flow.
	\|		\|
	*Reactive DC sputtering of Ti target		*Reactive DC sputtering of Ti target

Reet: /* Comparison of the methods for deposition of Titanium Oxide */

2024-01-22T14:24:33Z

Comparison of the methods for deposition of Titanium Oxide

← Older revision		Revision as of 16:24, 22 January 2024
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	!More info on TiO2		!More info on TiO2
	\|		\|
	*~~Expected to be~~ lower density than bulk material of same stoichiometry.		*Expect lower density than bulk material of same stoichiometry.
	\|		\|
	*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)\|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]		*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)\|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]

Reet: /* Comparison of the methods for deposition of Titanium Oxide */

2024-01-22T14:23:56Z

Comparison of the methods for deposition of Titanium Oxide

← Older revision		Revision as of 16:23, 22 January 2024
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	!Deposition rate		!Deposition rate
	\|		\|
	*1-10 Å/s Ti deposition rate (~~TiO<sub>2</sub>~~ should be faster)		*1-10 Å/s Ti deposition rate (oxidized layer growth should be faster; actual growth rate will need testing)
	\|		\|
	*not yet known, probably faster than Sputter-System(Lesker)		*not yet known, probably faster than Sputter-System(Lesker)

Reet: /* Comparison of the methods for deposition of Titanium Oxide */

2024-01-22T14:23:10Z

Comparison of the methods for deposition of Titanium Oxide

← Older revision		Revision as of 16:23, 22 January 2024
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	!Stoichiometry		!Stoichiometry
	\|		\|
	*Can probably be varied ~~(sputter target: Ti;~~ O~~<sub>2</sub> added during deposition)~~		*Can probably be varied, expect somewhat O-poor composition
	\|		\|
	*Can probably be varied		*Can probably be varied

Reet at 14:22, 22 January 2024

2024-01-22T14:22:33Z

← Older revision		Revision as of 16:22, 22 January 2024
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	==Deposition of Titanium Oxide==		==Deposition of Titanium Oxide==
	Titanium oxide can be deposited ~~either~~ by ~~a sputter technique~~ or ~~by use of~~ ALD (atomic layer deposition). In ~~sputter~~ deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry.		Titanium oxide can be deposited at Nanolab by sputtering, e-beam deposition, or ALD (atomic layer deposition). In sputtering and e-beam deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry. The oxygen flow in e-beam evaporation is lower than in sputtering, so it may not be possible to obtain fully oxidized TiO<sub>2</sub>, though we have not yet verified this.

	*[[/IBSD of TiO2\|TiO2 made on IBE/IBSD Ionfab300]]
	*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD\|TiO2 deposition using ALD]]		*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD\|TiO2 deposition using ALD]]
	*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)\|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]		*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)\|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]
	*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition in Sputter System (Lesker)\|TiO2 deposition in Sputter System (Lesker)]]		*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition in Sputter System (Lesker)\|TiO2 deposition in Sputter System (Lesker)]]

			We also used to have the option to sputter-deposit [[/IBSD of TiO2\|TiO2 with the IBE/IBSD Ionfab300]].

	==Comparison of the methods for deposition of Titanium Oxide==		==Comparison of the methods for deposition of Titanium Oxide==
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	\|-style="background:silver; color:black"		\|-style="background:silver; color:black"
	!		!
	!~~Sputter technique using~~ [[Specific Process Knowledge/~~Etch~~/~~IBE⁄IBSD Ionfab 300~~\|~~IBE/IBSD Ionfab300~~]]		![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]]
	![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-system Metal-Oxide(PC1)]]		![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-system Metal-Oxide(PC1)]]
	![[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System(Lesker)]]		![[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System(Lesker)]]
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	!Generel description		!Generel description
	\|		\|
	*~~TiO~~<sub>2</sub> ~~created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created~~.		*Evaporation of Ti pellets in the presence of a O<sub>2</sub> flow.
	\|		\|
	*Reactive DC sputtering of Ti target		*Reactive DC sputtering of Ti target
	*Reactive or non-reactive RF sputtering of ~~TiO2~~ target		*Reactive or non-reactive RF sputtering of TiO<sub>2</sub> target
	*Reactive pulsed DC sputtering		*Reactive pulsed DC sputtering
	*Reactive HIPIMS (high-power impulse magnetron sputtering)		*Reactive HIPIMS (high-power impulse magnetron sputtering)
	\|		\|
	*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma		*Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma
	*RF sputtering of ~~TiO2~~ target		*RF sputtering of TiO<sub>2</sub> target
	\|		\|
	*ALD (atomic layer deposition) of TiO<sub>2</sub>		*ALD (atomic layer deposition) of TiO<sub>2</sub>
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	!Stoichiometry		!Stoichiometry
	\|		\|
	*Can probably be varied (sputter target: Ti~~, O2~~ added during deposition)		*Can probably be varied (sputter target: Ti; O<sub>2</sub> added during deposition)
	\|		\|
	*Can probably be varied		*Can probably be varied
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	!Film Thickness		!Film Thickness
	\|		\|
	*~~~10~~ nm - ~~~0.5 µm (>2h)~~		*few nm - 100 nm
	\|		\|
	*~10 nm - ~0.5 µm		*~10 nm - ~0.5 µm
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	*~10 nm - ~0.5 µm (>2h)		*~10 nm - ~0.5 µm (>2h)
	\|		\|
	* 0 nm - 100 nm		* few nm - 100 nm
	\|-		\|-

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	!Deposition rate		!Deposition rate
	\|		\|
	*~~3.0~~-~~3.5 nm~~/~~min~~ (~~reactive sputtering~~)		*1-10 Å/s Ti deposition rate (TiO<sub>2</sub> should be faster)
	\|		\|
	*not yet known, probably faster than Sputter-System(Lesker)		*not yet known, probably faster than Sputter-System(Lesker)
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	!Step coverage		!Step coverage
	\|		\|
	*~~Not Known~~		*expect no step coverage unless the tilted sample holder is used, in which case step coverage should be very good and may be tuned with the tilt angle.
	\|		\|
	*Not Known		*Not Known
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	!Process Temperature		!Process Temperature
	\|		\|
	*~~Expected~~ to ~~be below 100~~ °C		*RT to 250 °C
	\|		\|
	*RT to 600 °C		*RT to 600 °C
	\|		\|
	*RT ~~to 400 °C~~		*RT
	\|		\|
	*120 °C - 150 °C: Amorphous TiO<sub>2</sub>		*120 °C - 150 °C: Amorphous TiO<sub>2</sub>
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	!More info on TiO2		!More info on TiO2
	\|		\|
	*~~[[/IBSD~~ of ~~TiO2\|TiO2 made on IBE/IBSD Ionfab300]]~~		*Expected to be lower density than bulk material of same stoichiometry.
	\|		\|
	*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)\|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]		*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)\|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]]
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	!Substrate size		!Substrate size
	\|		\|
	*~~1 50mm wafer~~		*Up to 4x6" wafers
	*~~1 100mm wafer~~		*Up to 3x8" wafers (ask for holder)
	*~~1 150mm wafer~~		*smaller pieces
	*1 200mm wafer
	*Smaller pieces ~~can be mounted with capton tape~~
	\|		\|
	*many small samples		*many small samples
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	!Allowed materials		!Allowed materials
	\|		\|
	*Almost any ~~materials~~		*Almost any material that does not outgas at your intended substrate temperature and is not toxic
	*~~not Pb and very poisonous materials~~		*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]
	\|		\|
	*Almost any ~~materials~~		*Almost any material that does not outgas at your intended substrate temperature
	*Pb and ~~poisonous~~ materials only after special agreement		*Pb and other toxic materials only after special agreement
	\|		\|
	*Almost any that do not outgas and are not very ~~poisonous~~		*Almost any that do not outgas and are not very toxic
	*Dedicated carrier for III-V materials		*Dedicated carrier for III-V materials
	*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]		*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]

Reet at 11:20, 13 June 2023

2023-06-13T11:20:13Z

← Older revision		Revision as of 13:20, 13 June 2023
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	''All contents by '''Nanolab staff'.'''''		''All contents by '''Nanolab staff.'''''

	==Deposition of Titanium Oxide==		==Deposition of Titanium Oxide==

Reet at 11:20, 13 June 2023

2023-06-13T11:20:01Z

← Older revision		Revision as of 13:20, 13 June 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Titanium_Oxide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Titanium_Oxide click here]'''

	''All contents by '''Nanolab staff'.''''		''All contents by '''Nanolab staff'.'''''

	==Deposition of Titanium Oxide==		==Deposition of Titanium Oxide==