Specific Process Knowledge/Thin film deposition/Deposition of Titanium - Revision history

Reet: /* Comparison of methods of Ti deposition */

2025-07-07T22:03:07Z

Comparison of methods of Ti deposition

← Older revision		Revision as of 00:03, 8 July 2025
Line 27:		Line 27:
	!		!
	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])
	~~! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])~~
	~~! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])~~
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! General description		! General description
	~~\|E-beam deposition of Titanium (line-of-sight deposition)~~
	\|E-beam deposition of Titanium (line-of-sight deposition)		\|E-beam deposition of Titanium (line-of-sight deposition)
	~~\|Sputter deposition of Titanium (some step coverage)~~
	\|Sputter deposition of Titanium (some step coverage)		\|Sputter deposition of Titanium (some step coverage)
	\|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage)		\|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage)
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	\|Ar ion etch (only in E-beam evaporator Temescal)		\|Ar ion etch (only in E-beam evaporator Temescal)
	\|		\|
	\|
	~~\|RF Ar clean~~
	\|RF Ar clean		\|RF Ar clean
	\|-		\|-
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	! Layer thickness		! Layer thickness
	\|10Å to 1 µm*		\|10Å to 1 µm*
	\|10Å to 1 µm*
	\|.
	\|.		\|.
	\|.		\|.
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	! Deposition rate		! Deposition rate
	\|1 Å/s to 10Å/s		\|1 Å/s to 10Å/s
	~~\|few Å/s to 15Å/s~~
	~~\|Depending on process parameters~~
	\|Depending on process parameters, about 1 Å/s.		\|Depending on process parameters, about 1 Å/s.
	\|Depending on process parameters		\|Depending on process parameters
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	*Up to 3x8" wafers (ask for holder)		*Up to 3x8" wafers (ask for holder)
	*smaller pieces		*smaller pieces
	\|
	*24x2" wafers or
	*6x4" wafers or
	*6x6" wafers
	\|
	*24x2" wafers or
	*6x4" wafers or
	*6x6" wafers
	\|		\|
	* Smaller pieces		* Smaller pieces
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Allowed ~~substrates~~		! Allowed materials

	\|		\|
	*Almost any as long as they do not degas. See cross-contamination sheet.
	\|
	*Almost any as long as they do not degas. See cross-contamination sheet.		*Almost any as long as they do not degas. See cross-contamination sheet.
	\|		\|
	*Almost any as long as they do not degas. See cross-contamination sheet.		*Almost any as long as they do not degas. See cross-contamination sheet.
	\|
	*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
	\|		\|
	*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.		*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	~~!Allowed materials~~
	\|
	*Almost any as noted above
	\|
	*Almost any as noted above
	\|
	*Almost any as noted above
	\|
	*Almost any as noted above
	\|
	*Almost any as noted above
	~~\|-style="background:LightGrey; color:black"~~
	! Comment		! Comment
	\|		\|
	\|
	\|
	\|		\|

Mmat at 20:49, 17 June 2025

2025-06-17T20:49:09Z

← Older revision		Revision as of 22:49, 17 June 2025
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	\|1 Å/s to 10Å/s		\|1 Å/s to 10Å/s
	\|few Å/s to 15Å/s		\|few Å/s to 15Å/s
	\|Depending on process parameters~~, see [[Sputtering of Ti in Wordentec\|here]].~~		\|Depending on process parameters
	\|Depending on process parameters, about 1 Å/s.		\|Depending on process parameters, about 1 Å/s.
	\|Depending on process parameters		\|Depending on process parameters

Reet: /* Titanium deposition */

2024-01-22T14:11:03Z

Titanium deposition

← Older revision		Revision as of 16:11, 22 January 2024
Line 7:		Line 7:
	==Titanium deposition ==		==Titanium deposition ==

	Titanium can be deposited by e-beam evaporation or sputtering.		Titanium can be deposited at DTU Nanolab by e-beam evaporation or sputtering.

	*[[/Ti deposition in Sputter System (Lesker)\|Ti deposition in Sputter System (Lesker)]]		*[[/Ti deposition in Sputter System (Lesker)\|Ti deposition in Sputter System (Lesker)]]


	~~In the chart below you can compare the different deposition equipment.~~

	== Ti as an adhesion layer ==		== Ti as an adhesion layer ==

Reet: /* Comparison of methods of Ti deposition */

2024-01-22T14:04:07Z

Comparison of methods of Ti deposition

← Older revision		Revision as of 16:04, 22 January 2024
Line 130:		Line 130:

	\|}		\|}
	'''*''' ''For thicknesses above 600 nm please write to metal@~~nanotech~~.dtu.dk to ensure that there is enough material available.''		'''*''' ''For thicknesses above 600 nm please write to metal@nanolab.dtu.dk to ensure that there is enough material available.''

Reet at 14:03, 22 January 2024

2024-01-22T14:03:31Z

← Older revision		Revision as of 16:03, 22 January 2024
Line 14:		Line 14:
	In the chart below you can compare the different deposition equipment.		In the chart below you can compare the different deposition equipment.

	~~The section below the chart elaborates on the use of~~ Ti as an ~~'''~~adhesion layer~~'''.~~		== Ti as an adhesion layer ==

			Titanium is most often used as a adhesion layer for other metals, such as gold. Gold does not stick very well to Si, and to prevent it to come off in future process steps or in the final application, a layer of Ti (or Cr or an organic layer) is often deposited onto the wafer.

			The most common thickness of the Ti adhesion layer is '''10 nm'''. Also layers with a thickness of 5 nm is used. Read more about [[Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers\|gold adhesion layers]].

			===Very thin adhesion layers===

			If it is important to have a very thin Ti layer, it is possible to use even thinner adhesion layers. There is some experience in using a 3 nm Ti as adhesion layer for a 200 nm thick gold layer. In this case a Si wafer was dipped in buffer and rinsed in water immediately before being placed in the PVD equipment (Wordentec). After an RF clean process of the wafer, 3nm of Ti and 200 nm of Au was deposited, and this worked fine during futher processing.

			==Comparison of methods of Ti deposition==

	{\| border="1" cellspacing="0" cellpadding="4"		{\| border="1" cellspacing="0" cellpadding="4"
	\|-style="background:silver; color:black"		\|-style="background:silver; color:black"
	!		!
	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|Temescal]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])
	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! General description		! General description
	\|E-beam deposition of Titanium		\|E-beam deposition of Titanium (line-of-sight deposition)
	\|E-beam deposition of Titanium		\|E-beam deposition of Titanium (line-of-sight deposition)
	\|Sputter deposition of Titanium		\|Sputter deposition of Titanium (some step coverage)
	\|Sputter deposition of Titanium		\|Sputter deposition of Titanium (some step coverage)
	\|Sputter deposition of Titanium		\|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage)
	\|-		\|-

	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Pre-clean		! Pre-clean
	\|Ar ion beam		\|Ar ion etch (only in E-beam evaporator Temescal)
	\|		\|
	\|		\|
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Deposition rate		! Deposition rate
	\|~~0.5Å~~/s to 10Å/s		\|1 Å/s to 10Å/s
	\|~~10Å~~/s to 15Å/s		\|few Å/s to 15Å/s
	\|Depending on process parameters, see [[Sputtering of Ti in Wordentec\|here]].		\|Depending on process parameters, see [[Sputtering of Ti in Wordentec\|here]].
	\|Depending on process parameters, about 1 Å/s.		\|Depending on process parameters, about 1 Å/s.
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	\|}		\|}
	'''*''' ''For thicknesses above 600 nm please write to metal@nanotech.dtu.dk to ensure that there is enough material available.''		'''*''' ''For thicknesses above 600 nm please write to metal@nanotech.dtu.dk to ensure that there is enough material available.''

	~~== Comments: Adhesion layer ==~~

	~~'''Ti as an adhesion layer'''~~

	Titanium is most often used as a adhesion layer for other metals, like for example gold. Gold does not stick very well to Si, and to prevent it to come off in future process steps or in the final application, a layer of Ti (or Cr) is often deposited onto the wafer.

	The most common thickness of the Ti adhesion layer is '''10 nm'''. Also layers with a thickness of 5 nm is used. Read more about [[Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers\|gold adhesion layers]].

	~~'''Very thin adhesion layers'''~~

	If it is important to have a very thin Ti layer, it is possible to use even thinner adhesion layers. There is some experience in using a 3 nm Ti as adhesion layer for a 200 nm thick gold layer. In this case a Si wafer was dipped in buffer and rinsed in water immediately before being placed in the PVD equipment (Wordentec). After an RF clean process of the wafer, 3nm of Ti and 200 nm of Au was deposited, and this worked fine during futher processing.

Eves at 16:11, 1 February 2023

2023-02-01T16:11:55Z

← Older revision		Revision as of 18:11, 1 February 2023
Line 1:		Line 1:

	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php~~?title=~~Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Titanium click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Titanium click here]'''

			<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>

Reet: /* Titanium deposition */ removed physimeca

2022-09-21T09:16:31Z

Titanium deposition: removed physimeca

← Older revision		Revision as of 11:16, 21 September 2022
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	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|Temescal]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|Temescal]])
	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])
	~~! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca\|Physimeca]])~~
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! General description		! General description
	~~\|E-beam deposition of Titanium~~
	\|E-beam deposition of Titanium		\|E-beam deposition of Titanium
	\|E-beam deposition of Titanium		\|E-beam deposition of Titanium
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	! Pre-clean		! Pre-clean
	\|Ar ion beam		\|Ar ion beam
	~~\|RF Ar clean~~
	\|		\|
	\|~~RF Ar clean~~		\|
	\|RF Ar clean		\|RF Ar clean
	\|RF Ar clean		\|RF Ar clean
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	\|10Å to 1 µm*		\|10Å to 1 µm*
	\|10Å to 1 µm*		\|10Å to 1 µm*
	~~\|10Å to 1000Å~~
	\|.		\|.
	\|.		\|.
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	\|0.5Å/s to 10Å/s		\|0.5Å/s to 10Å/s
	\|10Å/s to 15Å/s		\|10Å/s to 15Å/s
	~~\|About 10Å/s~~
	\|Depending on process parameters, see [[Sputtering of Ti in Wordentec\|here]].		\|Depending on process parameters, see [[Sputtering of Ti in Wordentec\|here]].
	\|Depending on process parameters, about 1 Å/s.		\|Depending on process parameters, about 1 Å/s.
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	*6x4" wafers or		*6x4" wafers or
	*6x6" wafers		*6x6" wafers
	\|
	*1x 2" wafer or
	*1x 4" wafers or
	*Several smaller pieces
	\|		\|
	*24x2" wafers or		*24x2" wafers or
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	\|		\|
	* ~~Silicon wafers~~		*Almost any as long as they do not degas. See cross-contamination sheet.
	* Quartz wafers
	* Pyrex wafers
	\|
	* Silicon wafers
	* Quartz wafers
	* Pyrex wafers
	\|		\|
	* ~~III~~-~~V materials~~		*Almost any as long as they do not degas. See cross-contamination sheet.
	* Silicon wafers
	* Quartz wafers
	* Pyrex wafers
	\|		\|
	* ~~Silicon wafers~~		*Almost any as long as they do not degas. See cross-contamination sheet.
	* Quartz wafers
	* Pyrex wafers
	\|		\|
	*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination ~~sheets~~.		*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
	\|		\|
	*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination ~~sheets~~.		*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Allowed materials		!Allowed materials
	\|		\|
	* ~~Silicon oxide~~		*Almost any as noted above
	* Silicon (oxy)nitride
	* Photoresist
	* PMMA
	* Mylar
	* SU-8
	* Metals
	\|		\|
	* ~~Silicon oxide~~		*Almost any as noted above
	* Silicon (oxy)nitride
	* Photoresist
	* PMMA
	* Mylar
	* SU-8
	* Metals
	\|		\|
	* ~~Silicon oxide~~		*Almost any as noted above
	* Silicon (oxy)nitride
	* Photoresist
	* PMMA
	* Mylar
	\|
	* Silicon oxide
	* Silicon (oxy)nitride
	* Photoresist
	* PMMA
	* Mylar
	* SU-8
	* Metals
	\|		\|
	*Almost any as noted above		*Almost any as noted above
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	\|		\|
	\|		\|
	\|
	\|		\|
	\|-		\|-

Eves: /* Titanium deposition */

2022-01-11T21:45:27Z

Titanium deposition

← Older revision		Revision as of 23:45, 11 January 2022
Line 5:		Line 5:
	==Titanium deposition ==		==Titanium deposition ==

	Titanium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.		Titanium can be deposited by e-beam evaporation or sputtering.

			*[[/Ti deposition in Sputter System (Lesker)\|Ti deposition in Sputter System (Lesker)]]


			In the chart below you can compare the different deposition equipment.

	The section below the chart elaborates on the use of Ti as an '''adhesion layer'''.		The section below the chart elaborates on the use of Ti as an '''adhesion layer'''.

Reet: /* Titanium deposition */ cluster sputter name

2020-08-08T22:28:01Z

Titanium deposition: cluster sputter name

← Older revision		Revision as of 00:28, 9 August 2020
Line 18:		Line 18:
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-~~based_multi~~-~~chamber_high_vacuum_sputtering_deposition_system#Process_information~~\|~~Cluster~~-~~based sputter~~ system]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
	\|-		\|-

Reet: /* Titanium deposition */ advertisement for section below

2020-04-20T13:09:07Z

Titanium deposition: advertisement for section below

← Older revision		Revision as of 15:09, 20 April 2020
Line 5:		Line 5:
	==Titanium deposition ==		==Titanium deposition ==

	Titanium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment. The ~~following sections tell about some properties of evaporated Ti films and~~ the use of Ti as an adhesion layer.		Titanium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

			The section below the chart elaborates on the use of Ti as an '''adhesion layer'''.