Specific Process Knowledge/Thin film deposition/Deposition of Tantalum Nitride - Revision history

Eves: /* Comparison of sputter systems for reactive deposition */

2025-07-30T17:07:50Z

Comparison of sputter systems for reactive deposition

← Older revision		Revision as of 19:07, 30 July 2025
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	*Limited by process time.		*Limited by process time.
	*Deposition rate (0.2 nm/s) is likely faster than Sputter-System (Lesker)		*Deposition rate (0.16 nm/s) is likely faster than Sputter-System (Lesker)

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Eves: /* Tantalum Nitride (TaNx) */

2025-07-30T17:04:59Z

Tantalum Nitride (TaNx)

← Older revision		Revision as of 19:04, 30 July 2025
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	=Tantalum Nitride (TaN<sub>x</sub>)=		=Tantalum Nitride (TaN<sub>x</sub>)=

	~~Tungsten~~ nitride (~~WNₓ~~, ~~commonly W₂N~~ or ~~δ‑WN~~) is a refractory ceramic that ~~combines~~ very high melting temperature, extreme hardness, chemical inertness, and ~~good~~ electrical ~~conductivity~~ in a ~~composition‑tunable,~~ CMOS‑compatible matrix.		Tantalum nitride (TaNₓ, typically Ta₂N or cubic δ‑TaN) is a refractory ceramic that pairs very high melting temperature, extreme hardness, chemical inertness, and controllable electrical resistivity in a CMOS‑compatible matrix.
	Thin films are ~~produced chiefly~~ by reactive magnetron ~~sputtering—where~~ nitrogen flow ~~and~~ substrate temperature ~~set stoichiometry~~ and ~~phase—and by e‑beam evaporation of tungsten~~ in ~~a reactive nitrogen ambient~~, ~~yielding dense layers with controllable~~ resistivity ~~and stress~~.		Thin films are grown mainly by reactive magnetron sputtering; tuning nitrogen flow, substrate temperature, and energy lets engineers dial in stoichiometry, grain size, stress, and resistivity.
	In semiconductor process flows, ~~WNₓ acts as a robust~~ Cu diffusion barrier/liner, ~~hard mask,~~ gate or contact ~~material~~, and precision thin‑film resistor; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks ~~and a candidate for x‑ray mask blanks~~.		Within semiconductor process flows, TaNₓ is the workhorse Cu diffusion barrier/liner, a stable gate or contact metal, a hard mask, and a precision thin‑film resistor in analog/RF circuits; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks.
	Optically, ~~WN-based stacks offer~~ durable~~, high-temperature~~ plasmonic and thermally emissive coatings, ~~mid-IR~~ absorbers, and ~~multilayer structures~~ for ~~soft-x-ray mirrors~~ and ~~synchrotron beamline optics~~, ~~delivering stability far beyond~~ noble metals under extreme photon ~~flux~~.		Optically, TaN‑based multilayers act as durable high‑temperature plasmonic and thermally emissive coatings, mid‑IR absorbers, and soft‑X‑ray mirrors for synchrotron beamlines and space telescopes, outperforming noble metals under extreme photon and thermal loads.
	Beyond electronics and photonics, ~~the material’s~~ wear and oxidation resistance ~~support~~ MEMS springs, high‑temperature sensors, and corrosion‑resistant coatings, while ~~select WN~~ phases become superconducting below ~~roughly 3–5 K~~, enabling ~~niche~~ low‑loss microwave resonators and ~~detector elements~~ that benefit from its mechanical robustness and diffusion‑barrier capability.		Beyond electronics and photonics, TaN’s wear and oxidation resistance underpin MEMS springs, high‑temperature sensors, and corrosion‑resistant coatings, while many TaN phases become superconducting below ~4–8 K, enabling low‑loss microwave resonators, kinetic‑inductance detectors, and other cryogenic devices that benefit from its simultaneous mechanical robustness and diffusion‑barrier capability.

	== Deposition of Tantalum Nitride ==		== Deposition of Tantalum Nitride ==

	Deposition of TaN<sub>x</sub> can only be done by reactive sputtering using W target.		Deposition of TaN<sub>x</sub> can only be done by reactive sputtering using a Ta target.

	The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The operating process is described in detail.:		The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The operating process is described in detail.:

Eves: /* Deposition of Tantalum Nitride */

2025-07-30T17:03:49Z

Deposition of Tantalum Nitride

← Older revision		Revision as of 19:03, 30 July 2025
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	== Deposition of Tantalum Nitride ==		== Deposition of Tantalum Nitride ==

	Deposition of WN<sub>x</sub> can only be done by reactive sputtering using W target.		Deposition of TaN<sub>x</sub> can only be done by reactive sputtering using W target.

	The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The operating process is described in detail.:		The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Cluster Lesker]]." The operating process is described in detail.:

Eves: Created page with "{{cc-nanolab}} '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum_Nitride&action=submit click here]''' =Tantalum Nitride (TaN_x)= Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness,..."

2025-07-30T17:02:57Z

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=Tantalum Nitride (TaNx)=

Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness, and good electrical conductivity in a composition‑tunable, CMOS‑compatible matrix.
Thin films are produced chiefly by reactive magnetron sputtering—where nitrogen flow and substrate temperature set stoichiometry and phase—and by e‑beam evaporation of tungsten in a reactive nitrogen ambient, yielding dense layers with controllable resistivity and stress.
In semiconductor process flows, WNₓ acts as a robust Cu diffusion barrier/liner, hard mask, gate or contact material, and precision thin‑film resistor; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks and a candidate for x‑ray mask blanks.
Optically, WN-based stacks offer durable, high-temperature plasmonic and thermally emissive coatings, mid-IR absorbers, and multilayer structures for soft-x-ray mirrors and synchrotron beamline optics, delivering stability far beyond noble metals under extreme photon flux.
Beyond electronics and photonics, the material’s wear and oxidation resistance support MEMS springs, high‑temperature sensors, and corrosion‑resistant coatings, while select WN phases become superconducting below roughly 3–5 K, enabling niche low‑loss microwave resonators and detector elements that benefit from its mechanical robustness and diffusion‑barrier capability.

== Deposition of Tantalum Nitride ==

Deposition of WNx can only be done by reactive sputtering using W target.

The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]]." The operating process is described in detail.:

* [[Specific Process Knowledge/Thin film deposition/Deposition of Tantalum Nitride/TaN Reactive Sputtering in Cluster Lesker PC3|Deposition of Tantalum Nitride (TaN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target)

At the moment (July 2025), we have a 3-inch Ta target (0.250" thick, nonbonded - mounted using the screw-through-target approach) for PC3 or PC1.

==Comparison of sputter systems for reactive deposition==

{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-

|-
|-style="background:silver; color:black"
!
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Nitride(PC3)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputter system]]
|-

|-
|-style="background:WhiteSmoke; color:black"
!Generel description
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*reactive DC/Pulsed DC
*reactive HIPIMS (high-power impulse magnetron sputtering)
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*reactive DC sputtering (not tested)
|-

|-
|-style="background:LightGrey; color:black"
!Stoichiometry
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*Tunable
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*Tunable
|-

|-
|-style="background:WhiteSmoke; color:black"
!Film thickness
|
*Limited by process time.
*Deposition rate (0.2 nm/s) is likely faster than Sputter-System (Lesker)

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*Limited by process time.
*Deposition rate unknown
|-

|-
|-style="background:LightGrey; color:black"
!Process temperature
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*Up to 600 °C
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*Up to 400 °C (Room temperature from 2021)
|-

|-
|-style="background:WhiteSmoke; color:black"
!Step coverage
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*Some step coverage possible
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*Some step coverage possible but amount unknown
|-

|-
|-style="background:LightGrey; color:black"
!Film quality
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*Deposition on one side of the substrate
*Properties including tunable stoichiometry (requires process development)
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*Deposition on one side of the substrate
*Unknown quality
*Likely O-contamination
|-

|-
|-style="background:WhiteSmoke; color:black"
!Batch size
|
*Many smaller samples
*Up to 10*100 mm or 150 mm wafers
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*Several smaller samples
*1-several 50 mm wafers
*1*100 mm wafers
*1*150 mm wafer
|-

|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
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*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
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*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
|-
|}