Specific Process Knowledge/Thin film deposition/Deposition of Tantalum - Revision history

Reet: /* E-beam evaporation of Tantalum */

2025-08-28T07:01:59Z

E-beam evaporation of Tantalum

← Older revision		Revision as of 09:01, 28 August 2025
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	== E-beam evaporation of Tantalum ==		== E-beam evaporation of Tantalum ==

	Tantalum can be deposited by e-beam ~~assisted~~ evaporation in ~~the~~ Temescal ~~tool~~.		Tantalum can be deposited by e-beam evaporation in our two Temescal tools.

	*[[/Ta Ebeam evaporation in Temescal \|E-beam evaporation of Ta in Temescal]]		*[[/Ta Ebeam evaporation in Temescal \|E-beam evaporation of Ta in Temescal]]

Eves: /* E-beam evaporation of Tantalum */

2025-07-30T12:34:30Z

E-beam evaporation of Tantalum

← Older revision		Revision as of 14:34, 30 July 2025
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Deposition rate		! Deposition rate
	\|0.5Å/s to 2Å/s		\|0.5Å/s to 1Å/s
	\|~0.3Å/s		\|~0.3Å/s
	\|at least in the range 1 Å/s to 4 Å/s		\|at least in the range 1 Å/s to 4 Å/s

Eves: /* E-beam evaporation of Tantalum */

2025-07-30T12:33:51Z

E-beam evaporation of Tantalum

← Older revision		Revision as of 14:33, 30 July 2025
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	! Layer thickness		! Layer thickness
	\|10Å to 0.2 µm*		\|10Å to 0.2 µm*
	\|10Å to ?		\|10Å to 6000Å
	\|10Å to ?		\|10Å to 6000Å
	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Deposition rate		! Deposition rate
	\|0.5Å/s to ~~10Å~~/s		\|0.5Å/s to 2Å/s
	\|~0.3Å/s		\|~0.3Å/s
	\|at least in the range 1 Å/s to 4 Å/s		\|at least in the range 1 Å/s to 4 Å/s

Eves: /* Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3) */

2025-07-30T12:31:51Z

Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3)

← Older revision		Revision as of 14:31, 30 July 2025
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	Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.		Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.



	==Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3)==		==Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3)==

	*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta in Sputter-System Metal-Nitride-PC3\|Sputtering of Ta in Sputter-System Metal-Nitride(PC3)]]. (Recommended approach)		*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta in Sputter-System Metal-Nitride-PC3\|Sputtering of Ta in Sputter-System Metal-Nitride(PC3)]]. (Recommended approach)


	==Sputtering of Tantalum in Sputter-System (Lesker)==		==Sputtering of Tantalum in Sputter-System (Lesker)==

Eves: /* Sputtering of Tantalum in Sputter-System (Lesker) */

2025-07-30T12:31:40Z

Sputtering of Tantalum in Sputter-System (Lesker)

← Older revision		Revision as of 14:31, 30 July 2025
Line 14:		Line 14:

	Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.		Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.

			==Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3)==

			*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta in Sputter-System Metal-Nitride-PC3\|Sputtering of Ta in Sputter-System Metal-Nitride(PC3)]]. (Recommended approach)


	==Sputtering of Tantalum in Sputter-System (Lesker)==		==Sputtering of Tantalum in Sputter-System (Lesker)==

Eves: /* Sputtering of Tantalum */

2025-07-30T12:29:26Z

Sputtering of Tantalum

← Older revision		Revision as of 14:29, 30 July 2025
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	Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.		Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.

	==Sputtering of Tantalum==		==Sputtering of Tantalum in Sputter-System (Lesker)==

	*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta\|Sputtering of Ta in Sputter-System (Lesker)]].		*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta\|Sputtering of Ta in Sputter-System (Lesker)]].

Eves at 09:41, 29 July 2025

2025-07-29T09:41:14Z

← Older revision		Revision as of 11:41, 29 July 2025
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	<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>		<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>

			=Tantalum (Ta)=

			Tantalum (Ta) is a refractory metal prized for its extreme melting point, corrosion resistance, and biocompatibility, serving an array of semiconductor, optical, and engineering roles.
			Thin films are produced mainly by magnetron sputtering or e‑beam evaporation; process conditions determine whether low‑resistivity α‑Ta (stable body‑centered‑cubic) or high‑resistivity β‑Ta (metastable tetragonal) is obtained.
			In semiconductor fabrication, Ta acts as an adhesion liner and Cu diffusion barrier in interconnects, a robust gate or contact metal, and a hard mask, with α‑Ta preferred when minimal resistive loss is essential.
			Crucially, α‑Ta becomes superconducting below ≈4.5 K, making it valuable for superconducting nanowire detectors, qubit circuitry, and low‑loss microwave resonators. In contrast, the intrinsically stressed β-Ta phase is leveraged for thin-film precision resistors, microheaters, and radiation-hard sensors.
			Both phases benefit from Ta’s chemical inertness and x‑ray opacity, supporting x‑ray/EUV optics, MEMS springs, biomedical implants, and durable corrosion‑resistant coatings, underscoring Ta’s versatility when a stable, tunable metallic film is required.

	== Tantalum deposition ==		== Tantalum deposition ==

Reet: /* E-beam evaporation of Tantalum */

2025-07-07T21:28:51Z

E-beam evaporation of Tantalum

← Older revision		Revision as of 23:28, 7 July 2025
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	!		!

	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|Temescal]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|Temescal]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])
	! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker\|Lesker]])		! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker\|Lesker]])
	! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])		! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
Line 39:		Line 39:
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Pre-clean		! Pre-clean
	\|Ar ion source		\|Ar ion source (E-beam evaporator Temescal only)
	\|~~RF Ar clean~~		\|none
	\|RF Ar clean		\|RF Ar clean
	\|-		\|-
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	! Comment		! Comment
	\| Tantalum deposition heats the chamber*		\| Tantalum deposition heats the chamber*
	\| 2-inch Ta target
	\| 3-inch Ta target		Heating to 250 °C available in the 10-pocket e-beam evaporator.
			\| 2-inch Ta target.

			\| 3-inch Ta target.
			Heating available to 600 °C.
	\|}		\|}

	'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].''		'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].''

Reet: /* Sputtering of Tantalum */

2025-07-07T21:26:40Z

Sputtering of Tantalum

← Older revision		Revision as of 23:26, 7 July 2025
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	==Sputtering of Tantalum==		==Sputtering of Tantalum==

	~~You can read more about Ta sputter deposition using Sputter-System(Lesker)~~

	*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta\|Sputtering of Ta in Sputter-System (Lesker)]].		*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta\|Sputtering of Ta in Sputter-System (Lesker)]].

Reet: /* E-beam evaporation of Tantalum */

2023-06-13T11:13:13Z

E-beam evaporation of Tantalum

← Older revision		Revision as of 13:13, 13 June 2023
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	\|0.5Å/s to 10Å/s		\|0.5Å/s to 10Å/s
	\|~0.3Å/s		\|~0.3Å/s
	\|~~Not been tested~~		\|at least in the range 1 Å/s to 4 Å/s
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
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	! Comment		! Comment
	\| Tantalum deposition heats the chamber*		\| Tantalum deposition heats the chamber*
	\|		\| 2-inch Ta target
	\| 3-inch Ta target		\| 3-inch Ta target
	\|}		\|}

	'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].''		'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].''