Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide - Revision history

Mmat at 12:35, 17 June 2025

2025-06-17T12:35:09Z

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	==Deposition of Silicon Oxide using LPCVD==		==Deposition of Silicon Oxide using LPCVD==
	The LPCVD oxide you can deposit at DTU Nanolab is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS\|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of 13 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The TEOS oxide has good step coverage and hole filing/covering properties and the film thickness is very uniform over the wafer. We have two standard TEOS processes: One for depositing standard layers ~(0-1.5 µm) and one for deposition thick layers ~(1.5µm-4µm). The TEOS oxide has a dielectric constant very close to the one for thermal oxide (3.65 for TEOS).		The LPCVD oxide you can deposit at DTU Nanolab is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS\|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of 13 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The TEOS oxide has good step coverage and hole filing/covering properties and the film thickness is very uniform over the wafer. We have two standard TEOS processes: One for depositing standard layers ~(0-1.5 µm) and one for deposition thick layers ~(1.5µm-4µm). The TEOS oxide has a dielectric constant very close to the one for thermal oxide (3.65 for TEOS).
	*[[/Deposition of Silicon Oxide using LPCVD TEOS\|Deposition of Silicon Oxide using LPCVD TEOS]]		*[[/Deposition of Silicon Oxide using LPCVD TEOS\|Deposition of Silicon Oxide using LPCVD TEOS]]

Paphol: /* Comparison of the methods for deposition of Silicon Oxide */

2025-04-02T07:28:51Z

Comparison of the methods for deposition of Silicon Oxide

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	'''*''' If you wish to deposit more than ~~100~~ nm, please talk to responsible staff or write to thinfilm@nanolab.dtu.dk		'''*''' If you wish to deposit more than 200 nm, please talk to responsible staff or write to thinfilm@nanolab.dtu.dk

Paphol: /* Comparison of the methods for deposition of Silicon Oxide */

2025-04-02T07:28:21Z

Comparison of the methods for deposition of Silicon Oxide

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	* Thin layers (up to 200-300 nm)		* Thin layers (up to 200-300 nm)
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	* Thin layers (up to ~~100~~ nm)*		* Thin layers (up to 200 nm)*
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	*1,5-2 nm after 10 min.		*1,5-2 nm after 10 min.

Eves at 14:45, 7 February 2024

2024-02-07T14:45:32Z

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	==Deposition of Silicon Oxide using e-beam evaporation==		==Deposition of Silicon Oxide using e-beam evaporation==
	It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.		It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.

			*[[/Deposition of SiO2 in E-Beam Evaporator Temescal-2\|Deposition of SiO2 using E-Beam Evaporator (10-pockets)]]

	==Wet SiO2 growth ==		==Wet SiO2 growth ==

Reet at 13:49, 22 January 2024

2024-01-22T13:49:36Z

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	'''Training and risk assessment always needed'''		'''Training and risk assessment always needed'''


	==Deposition of Silicon Oxide using ALD==		==Deposition of Silicon Oxide using ALD==

Reet at 13:48, 22 January 2024

2024-01-22T13:48:51Z

Reet at 13:46, 22 January 2024

2024-01-22T13:46:08Z

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	''All contents by DTU Nanolab staff.''		''All contents by DTU Nanolab staff.''

	Deposition of Silicon Oxide can be done ~~with either~~ LPCVD, PECVD, by sputtering, or by e-beam evaporation. It is also possible to grow silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation\|thermal oxide]] in a hot furnace.		Deposition of Silicon Oxide can be done here at DTU Nanolab by LPCVD, PECVD, sputtering, or e-beam evaporation. In our cleanroom it is also possible to '''grow''' silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation\|thermal oxide]] in a hot furnace.

	==Deposition of Silicon Oxide using LPCVD==		==Deposition of Silicon Oxide using LPCVD==

Reet at 13:45, 22 January 2024

2024-01-22T13:45:11Z

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	''All contents by DTU Nanolab staff.''		''All contents by DTU Nanolab staff.''

	Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputtering, by e-beam evaporation~~, or by ALD~~. ~~You can~~ also ~~make~~ a silicon ~~oxide layer by growing~~ a [[Specific Process Knowledge/Thermal Process/Oxidation\|thermal oxide]] in a hot furnace ~~but that requires a silicon surface as a starting point~~.		Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputtering, or by e-beam evaporation. It is also possible to grow silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation\|thermal oxide]] in a hot furnace.

	==Deposition of Silicon Oxide using LPCVD==		==Deposition of Silicon Oxide using LPCVD==
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	Formerly we also had the option to sputter silicon oxide using the [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE Ionfab300]]. You can read more about that [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2\|here]].		Formerly we also had the option to sputter silicon oxide using the [[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300\|IBE Ionfab300]]. You can read more about that [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2\|here]].

	~~==Deposition of Silicon Oxide using ALD==~~
	Formerly it was possible to deposit thin films of silicon oxide up to 50 nm in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2]]. This is unfortunately no longer possible. You can read about the results of depositions in the past here: [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2\|Deposition of Silicon Oxide using ALD2]].

	==Deposition of Silicon Oxide using e-beam evaporation==		==Deposition of Silicon Oxide using e-beam evaporation==
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	'''Training and risk assessment always needed'''		'''Training and risk assessment always needed'''


			==Deposition of Silicon Oxide using ALD==
			Formerly it was possible to deposit thin films of silicon oxide up to 50 nm in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2]]. This is unfortunately no longer possible. You can read about the results of depositions in the past here: [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2\|Deposition of Silicon Oxide using ALD2]].


	==Comparison of the methods for deposition of Silicon Oxide==		==Comparison of the methods for deposition of Silicon Oxide==

Reet: /* Deposition of Silicon Oxide using ALD */

2024-01-22T13:42:32Z

Deposition of Silicon Oxide using ALD

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	==Deposition of Silicon Oxide using ALD==		==Deposition of Silicon Oxide using ALD==
	~~Thin~~ films of silicon oxide up to 50 nm ~~can be deposited~~ in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2]]. ~~The ALD2 uses the plasma source and~~ can ~~therefore only deposit on one wafer at a time. The deposition takes place at 300 <sup>o</sup>C, where~~ the ~~growth rate is 0.1222nm on flat samples. It is also possible to deposit uniform layers on high aspect ratio structures with a growth rate~~ of ~~0.1629 nm/cycle.~~		Formerly it was possible to deposit thin films of silicon oxide up to 50 nm in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2]]. This is unfortunately no longer possible. You can read about the results of depositions in the past here: [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2\|Deposition of Silicon Oxide using ALD2]].

	*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2\|Deposition of Silicon Oxide using ALD2]]

	==Deposition of Silicon Oxide using e-beam evaporation==		==Deposition of Silicon Oxide using e-beam evaporation==

Reet: /* Deposition of Silicon Oxide using ALD */

2024-01-22T13:40:47Z

Deposition of Silicon Oxide using ALD

← Older revision		Revision as of 15:40, 22 January 2024
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	==Deposition of Silicon Oxide using ALD==		==Deposition of Silicon Oxide using ALD==
	Thin films of silicon oxide up to 50 nm can ~~also~~ be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2]]. The ALD2 uses the plasma source and can therefore only deposit on one wafer at a time. The deposition takes place at 300 <sup>o</sup>C, where the growth rate is 0.1222nm on flat samples. It is also possible to deposit uniform layers on high aspect ratio structures with a growth rate of 0.1629 nm/cycle.		Thin films of silicon oxide up to 50 nm can be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2]]. The ALD2 uses the plasma source and can therefore only deposit on one wafer at a time. The deposition takes place at 300 <sup>o</sup>C, where the growth rate is 0.1222nm on flat samples. It is also possible to deposit uniform layers on high aspect ratio structures with a growth rate of 0.1629 nm/cycle.

	*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2\|Deposition of Silicon Oxide using ALD2]]		*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2\|Deposition of Silicon Oxide using ALD2]]

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	''All contents by DTU Nanolab staff.''		''All contents by DTU Nanolab staff.''

	~~Deposition of~~ Silicon Oxide can be ~~done~~ here at DTU Nanolab by LPCVD, PECVD, sputtering, or e-beam evaporation. In our cleanroom it is also possible to '''grow''' silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation\|thermal oxide]] in a hot furnace.		Silicon Oxide can be '''deposited''' here at DTU Nanolab by LPCVD, PECVD, sputtering, or e-beam evaporation. In our cleanroom it is also possible to '''grow''' silicon oxide using a silicon surface as a starting point. This can be done with wet chemistry in a beaker (see below), or as a [[Specific Process Knowledge/Thermal Process/Oxidation\|thermal oxide]] in a hot furnace.

	==Deposition of Silicon Oxide using LPCVD==		==Deposition of Silicon Oxide using LPCVD==
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	==Deposition of Silicon Oxide using PECVD==		==Deposition of Silicon Oxide using PECVD==
	PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 ~~degrees Celcius~~. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used eg. as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, ~~this~~ is not allowed in the LPCVD and in PECVD4.		PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 °C. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used, e.g., as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, which is not allowed in the LPCVD and in PECVD4.
	*[[/Deposition of Silicon Oxide using PECVD\|Deposition of Silicon Oxide using PECVD]]		*[[/Deposition of Silicon Oxide using PECVD\|Deposition of Silicon Oxide using PECVD]]

	==Deposition of Silicon Oxide using sputter deposition==		==Deposition of Silicon Oxide using sputter deposition==
	At DTU Nanolab ~~you can~~ sputter silicon oxide in the Sputter-System [[Specific Process Knowledge/Thin film deposition/Lesker\|(Lesker)]] or the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-System Metal Oxide(PC1)]]. An advantage ~~here~~ is that you can deposit on many kinds of material.		At DTU Nanolab we sputter silicon oxide in the Sputter-System [[Specific Process Knowledge/Thin film deposition/Lesker\|(Lesker)]] or the [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-System Metal Oxide(PC1)]]. An advantage of sputtering is that you can deposit on many kinds of material.

	*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1)\|Reactively Sputtered Silicon Oxide in Sputter-System Metal Oxide (PC1)]]		*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1)\|Reactively Sputtered Silicon Oxide in Sputter-System Metal Oxide (PC1)]]
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	*Almost any that will not degas and is not very poisonous		*Almost any that will not degas and is not very poisonous
	*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]		*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
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	*Almost any that will not degas and is not very poisonous		*Almost any that will not degas and is not very poisonous
	*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]		*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]
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	*Acids react with a number of metals to produce hydrogen which, in contact with the air, may cause explosions		*Acids react with a number of metals to produce hydrogen which, in contact with the air, may cause explosions