Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride - Revision history

Eves at 09:37, 29 July 2025

2025-07-29T09:37:00Z

← Older revision		Revision as of 11:37, 29 July 2025
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''

			=Silicon Nitride (Si₃N₄)=

			Silicon nitride (Si₃N₄) is a wide‑bandgap (~5 eV) ceramic prized for its high mechanical strength, low intrinsic stress, chemical inertness, and excellent dielectric properties, making it a workhorse insulator in microelectronics and MEMS.
			It is deposited by reactive magnetron sputtering for dense, low‑defect films, and by low‑pressure CVD (LPCVD) or plasma‑enhanced CVD (PECVD) to obtain highly uniform, conformal layers over large wafers or temperature‑sensitive substrates.
			Within semiconductor process flows, Si₃N₄ serves as a hard mask, etch stop, stress liner, diffusion barrier, gate or capacitor dielectric, shallow‑trench‑isolation liner, and robust passivation layer for logic, memory, and power devices.
			Optically, its moderate refractive index (~2.0) and low propagation loss enable high-Q integrated-photonics waveguides, resonators, frequency-comb sources, filters, and durable anti-reflection coatings spanning the visible to the mid-IR.
			Beyond electronics and photonics, Si₃N₄’s high fracture toughness, fatigue resistance, and chemical stability support MEMS pressure sensors, accelerometers, and resonators, as well as protective barriers in solar cells, Li‑ion batteries, and high‑temperature or corrosive‑environment components, underscoring its versatility across semiconductor, optical, and engineering applications.

	== Deposition of silicon nitride ==		== Deposition of silicon nitride ==

	Deposition of silicon nitride can be done by either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). Stoichiometric nitride or silicon rich (low stress) LPCVD nitride is deposited on a batch of wafers in a LPCVD nitride furnace. PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD it is possible to deposit a much lower temperature and a thicker layer of nitride on different types of samples, but the nitride does not cover sidewalls very well.		Deposition of silicon nitride can be done by either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). Stoichiometric nitride or silicon-rich (low stress) LPCVD nitride is deposited on a batch of wafers in an LPCVD nitride furnace. PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD, it is possible to deposit a much lower temperature and a thicker layer of nitride on different types of samples, but the nitride does not cover the sidewalls very well.

	It is also possible to deposit silicon nitride and oxynitride by reactive sputtering.		It is also possible to deposit silicon nitride and oxynitride by reactive sputtering.

Mmat at 12:58, 6 March 2025

2025-03-06T12:58:29Z

← Older revision		Revision as of 14:58, 6 March 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''

	~~<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>~~

	== Deposition of silicon nitride ==		== Deposition of silicon nitride ==

Paphol at 09:12, 11 May 2023

2023-05-11T09:12:30Z

← Older revision		Revision as of 11:12, 11 May 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''

			<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>

	== Deposition of silicon nitride ==		== Deposition of silicon nitride ==

Eves: /* Deposition of silicon nitride */

2022-01-11T21:13:23Z

Deposition of silicon nitride

← Older revision		Revision as of 23:13, 11 January 2022
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	*[[/Deposition of silicon nitride using Lesker sputter system\|Nitride deposition using Lesker sputter system]]		*[[/Deposition of silicon nitride using Lesker sputter system\|Nitride deposition using Lesker sputter system]]

			*[[/Deposition of silicon nitride using Sputter-System Metal-Oxide(PC1)\|Nitride deposition using Sputter-System Metal-Oxide(PC1)]]

	==Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition==		==Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition==

Reet: /* Comparison of LPCVD, PECVD and Lesker sputter system for silicon nitride deposition */ Added sputter-system metal-nitridePC3 and metal-oxide PC1

2020-04-23T10:39:20Z

Comparison of LPCVD, PECVD and Lesker sputter system for silicon nitride deposition: Added sputter-system metal-nitridePC3 and metal-oxide PC1

← Older revision		Revision as of 12:39, 23 April 2020
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	*[[/Deposition of silicon nitride using Lesker sputter system\|Nitride deposition using Lesker sputter system]]		*[[/Deposition of silicon nitride using Lesker sputter system\|Nitride deposition using Lesker sputter system]]

	==Comparison of LPCVD, PECVD and ~~Lesker~~ sputter ~~system~~ for silicon nitride deposition==		==Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition==

	{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
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	![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride\|LPCVD]]		![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride\|LPCVD]]
	![[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]]		![[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]]
			![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-System Metal-Nitride(PC3) and Sputter-System Metal-Oxide(PC1)]]
	![[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker sputter system]]		![[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker sputter system]]
	\|-		\|-
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Generel description		!Generel description
	\|Low Pressure Chemical Vapour Deposition (LPCVD furnace process)		\|
	\|Plasma Enhanced Chemical Vapour Deposition (PECVD process)		*Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
	\|Reactive sputtering		\|
			*Plasma Enhanced Chemical Vapour Deposition (PECVD process)
			\|
			*Reactive sputtering
			*Pulsed DC reactive sputtering
			*Reactive HIPIMS (high-power impulse magnetron sputtering)
			\|*Reactive sputtering
	\|-		\|-

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	*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>		*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
	Silicon nitride can be doped with boron or phosphorus		Silicon nitride can be doped with boron or phosphorus
	\|Unknown		\|
			*Si<sub>x</sub>N<sub>y</sub> (Sputter-System Metal-Nitride(PC3))
			*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub> (Sputter-System Metal-Oxide(PC1))
			Tunable composition
			\|
			*Unknown
	\|-		\|-

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	\|		\|
	*~40 nm - 10 µm		*~40 nm - 10 µm
	\|limited by process time.		\|
	Deposition rate is ~1~~.7nm~~/min		*limited by process time.
			*Deposition rate likely faster than Sputter-System (Lesker)

			\|
			*limited by process time.
			*Deposition rate ~ 1-5 nm/min
	\|-		\|-

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	!Process temperature		!Process temperature
	\|		\|
	*Stoichiometric nitride: 780 ~~<sup>o</sup>C~~ - 800 ~~<sup>o</sup>C~~		*Stoichiometric nitride: 780 °C - 800 °C
	*Silicon rich (low stress) nitride: 810 ~~<sup>o</sup>C~~ - 845 ~~<sup>o</sup>C~~		*Silicon rich (low stress) nitride: 810 °C - 845 °C
	\|		\|
	*300 ~~<sup>o</sup>C~~		*300 °C
	\|~~Room temperature (higher temperature possible)~~		\|
			*Up to 600 °C
			\|
			*Up to 400 °C
	\|-		\|-

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	\|		\|
	*Less good		*Less good
	\|~~yes~~, but amount unknown		\|
			*some step coverage possible, especially by HIPIMS
			\|
			*some step coverage possible but amount unknown
	\|-		\|-

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	*Less dense film		*Less dense film
	*Incorporation of hydrogen in the film		*Incorporation of hydrogen in the film
			\|
			*Deposition on one side of the substrate
			*Less dense film
			*Properties including density tunable (requires process development)
	\|		\|
	*Deposition on one side of the substrate		*Deposition on one side of the substrate
	*unknown quality		*unknown quality
			*likely O-contamination
	\|-		\|-

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	\|		\|
	*Dependent on recipe: ~1-10 Å/min		*Dependent on recipe: ~1-10 Å/min
	\|Unknown		\|
			*Unknown
			\|
			*Unknown
	\|-		\|-

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	!BHF etch rate		!BHF etch rate
	\|		\|
	*Very low		*Very low ([[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride\|more info here]])
	\|		\|
	*Very high compared the LPCVD nitride		*Very high compared the LPCVD nitride ([[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride\|more info here]])
	\|Unknown		\|
			*Unknown
			\|
			*Unknown
	\|-		\|-

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	*1 150 mm wafer		*1 150 mm wafer
	Depending on what PECVD you use		Depending on what PECVD you use
			\|
			*many smaller samples
			Up to 10100 mm or 150 mm wafers
	\|		\|
	*Several smaller samples		*Several smaller samples
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	*III-V materials (in PECVD4)		*III-V materials (in PECVD4)
	*Small amount of metals (in PECVD3)		*Small amount of metals (in PECVD3)
	\|Any		\|
			*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
			\|
			*Any
	\|-		\|-
	\|}		\|}

Reet: /* Deposition of silicon nitride */ removed specific reference to old Lesker where now we have more options

2020-04-23T10:20:47Z

Deposition of silicon nitride: removed specific reference to old Lesker where now we have more options

← Older revision		Revision as of 12:20, 23 April 2020
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	== Deposition of silicon nitride ==		== Deposition of silicon nitride ==

	Deposition of silicon nitride can be done ~~with~~ either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). Stoichiometric nitride or silicon rich (low stress) LPCVD nitride is deposited on a batch of wafers in a LPCVD nitride furnace~~, and~~ PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD it is possible to deposit a much lower temperature and a thicker layer of nitride on different types of samples, but the nitride does not cover sidewalls very well.		Deposition of silicon nitride can be done by either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). Stoichiometric nitride or silicon rich (low stress) LPCVD nitride is deposited on a batch of wafers in a LPCVD nitride furnace. PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD it is possible to deposit a much lower temperature and a thicker layer of nitride on different types of samples, but the nitride does not cover sidewalls very well.

	It is also possible to deposit silicon nitride ~~using the Lesker sputter system~~.		It is also possible to deposit silicon nitride and oxynitride by reactive sputtering.

	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace\|Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace]]		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace\|Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace]]

Jmli at 14:02, 25 November 2019

2019-11-25T14:02:19Z

← Older revision		Revision as of 16:02, 25 November 2019
Line 168:		Line 168:

	==Deposition of Silicon Nitride using LPCVD==		==Deposition of Silicon Nitride using LPCVD==
	LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride\|LPCVD nitride furnace]]. ~~Danchip~~ has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers.		LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride\|LPCVD nitride furnace]]. DTU Nanolab has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers.

	The LPCVD nitride deposition is a batch process, meaning that nitride can be deposited on a batch of up to 15 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at a pressure of 120-200 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces there are standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride furnace).		The LPCVD nitride deposition is a batch process, meaning that nitride can be deposited on a batch of up to 15 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at a pressure of 120-200 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces there are standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride furnace).

Jmli at 14:00, 25 November 2019

2019-11-25T14:00:20Z

← Older revision		Revision as of 16:00, 25 November 2019
Line 174:		Line 174:

	==Deposition of Silicon Nitride using PECVD==		==Deposition of Silicon Nitride using PECVD==
	PECVD nitride and oxynitride can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] systems at ~~Danchip~~. You can run 1-3 wafers on several smaller chips at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celsius. This can be of importance for some applications, but it gives a less dense film compared to LPCVD nitride, and the stoichiometry is on the following form: Si<sub>x</sub>N<sub>y</sub>O<sub>z</sub>H<sub>v</sub>. The step coverage and the thickness uniformity of the film are not as good as for the LPCVD nitride. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system; this is not allowed in the LPCVD furnace and in the clean PECVD (PECVD1). We also have a PECVD for deposition on III-V materials (PECVD2).		PECVD nitride and oxynitride can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] systems at DTU Nanolab. You can run 1-3 wafers on several smaller chips at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celsius. This can be of importance for some applications, but it gives a less dense film compared to LPCVD nitride, and the stoichiometry is on the following form: Si<sub>x</sub>N<sub>y</sub>O<sub>z</sub>H<sub>v</sub>. The step coverage and the thickness uniformity of the film are not as good as for the LPCVD nitride. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system; this is not allowed in the LPCVD furnace and in the clean PECVD (PECVD1). We also have a PECVD for deposition on III-V materials (PECVD2).
	*[[/Deposition of Silicon Nitride using PECVD\|Deposition of Silicon Nitride using PECVD]] - ''or oxynitride''		*[[/Deposition of Silicon Nitride using PECVD\|Deposition of Silicon Nitride using PECVD]] - ''or oxynitride''

Jmli at 12:13, 25 November 2019

2019-11-25T12:13:47Z

Bghe: /* Comparison of LPCVD, PECVD and Lesker sputter system for silicon nitride deposition */

2017-06-26T09:51:12Z

Comparison of LPCVD, PECVD and Lesker sputter system for silicon nitride deposition

← Older revision		Revision as of 11:51, 26 June 2017
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	\|		\|
	*Silicon		*Silicon
	*Silicon oxide (with boron, phosphorous ~~and germanium~~)		*Silicon oxide (with boron, phosphorous)
	*Silicon nitrides (with boron, phosphorous ~~and germanium~~)		*Silicon nitrides (with boron, phosphorous)
	*Pure quartz (fused silica)		*Pure quartz (fused silica)
			*III-V materials (in PECVD4)
			*Small amount of metals (in PECVD3)
	\|Any		\|Any
	\|-		\|-

← Older revision		Revision as of 14:13, 25 November 2019
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''

	== Deposition of silicon nitride ==		== Deposition of silicon nitride ==

	Deposition of silicon nitride can be done with either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). ~~Stochiometric~~ nitride or silicon rich (low stress) LPCVD nitride is deposited on a batch of wafers in a LPCVD nitride furnace, and PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD it is possible to deposit a much lower temperature and a thicker layer of nitride on different types of samples, but the nitride does not cover sidewalls very well.		Deposition of silicon nitride can be done with either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). Stoichiometric nitride or silicon rich (low stress) LPCVD nitride is deposited on a batch of wafers in a LPCVD nitride furnace, and PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD it is possible to deposit a much lower temperature and a thicker layer of nitride on different types of samples, but the nitride does not cover sidewalls very well.

	It is also possible to deposit silicon nitride using the Lesker sputter system.		It is also possible to deposit silicon nitride using the Lesker sputter system.

	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace\|Deposition of ~~stochiometric~~ nitride using the 4" LPCVD nitride furnace]]		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace\|Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace]]
	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of low stress nitride using the 6" LPCVD nitride furnace\|Deposition of silicon rich (low stress) nitride using the 6" LPCVD nitride furnace]]		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of low stress nitride using the 6" LPCVD nitride furnace\|Deposition of silicon rich (low stress) nitride using the 6" LPCVD nitride furnace]]

Line 52:		Line 52:
	!Film thickness		!Film thickness
	\|		\|
	*~~Stoichimetric~~ nitride: ~5 nm - ~230 nm		*Stoichiometric nitride: ~5 nm - ~230 nm
	*Silicon rich (low stress) nitride: ~5 nm - ~335 nm		*Silicon rich (low stress) nitride: ~5 nm - ~335 nm
	Thicker nitride layers can be deposited over more runs (maximum two)		Thicker nitride layers can be deposited over more runs (maximum two)
Line 170:		Line 170:
	LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride\|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers.		LPCVD silicon nitride can be deposited in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride\|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or on 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers.

	The LPCVD nitride deposition is a batch process, meaning that nitride can be deposited on a batch of up to 15 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at a pressure of 120-200 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces there are standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride ~~funace~~).		The LPCVD nitride deposition is a batch process, meaning that nitride can be deposited on a batch of up to 15 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at a pressure of 120-200 mTorr. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces there are standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SRN) (only on the old nitride furnace).
	*[[/Deposition of Silicon Nitride using LPCVD\|Deposition of Silicon Nitride using LPCVD]]		*[[/Deposition of Silicon Nitride using LPCVD\|Deposition of Silicon Nitride using LPCVD]]