Specific Process Knowledge/Thin film deposition/Deposition of Silicon Carbide - Revision history

Eves at 17:20, 30 July 2025

2025-07-30T17:20:22Z

← Older revision		Revision as of 19:20, 30 July 2025
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Carbide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Carbide click here]'''

			{{cc-nanolab}}

	<br clear="all" />		<br clear="all" />

Eves at 17:19, 30 July 2025

2025-07-30T17:19:43Z

← Older revision		Revision as of 19:19, 30 July 2025
Line 2:		Line 2:

	<br clear="all" />		<br clear="all" />


			=Silicon Carbide=

			Silicon carbide (SiC) is a wide‑bandgap (≈2.3–3.3 eV) semiconductor with exceptionally high thermal conductivity, extreme hardness, chemical inertness, and strong radiation tolerance, making it ideal for harsh‑environment and high‑power applications.
			It is deposited by magnetron sputtering for dense amorphous or nanocrystalline films and by LPCVD (not at DTU Nanolab) or PECVD (not at DTU Nanolab) for conformal, low‑stress coatings, or grown epitaxially by CVD for device‑grade 3C/4H/6H layers on Si or bulk SiC wafers.
			Within semiconductor process flows, thin‑film SiC acts as a hard mask, diffusion barrier, and robust structural or passivation layer, while epitaxial SiC underpins high‑voltage MOSFETs, Schottky diodes, and MEMS resonators that operate well above 300 °C.
			Optically, its moderate refractive index (~2.6) and wide transparency window (UV to mid‑IR) enable low‑loss integrated‑photonics waveguides, mid‑IR lenses and windows, and quantum photonic platforms hosting color‑center emitters.
			Beyond electronics and photonics, SiC’s wear, oxidation, and corrosion resistance support protective coatings, tribological layers, high‑temperature sensors, micro‑heaters, and thermal management substrates—underscoring its versatility wherever a tough, thermally conductive, and chemically stable thin film is required.

	== Deposition of Silicon Carbide ==		== Deposition of Silicon Carbide ==

Eves at 11:44, 9 January 2025

2025-01-09T11:44:44Z

← Older revision		Revision as of 13:44, 9 January 2025
Line 5:		Line 5:
	== Deposition of Silicon Carbide ==		== Deposition of Silicon Carbide ==

	Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System (Lesker)]]:		Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System (Lesker)]] (Src5-RF):

	*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]		*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]

Eves at 18:48, 20 December 2022

2022-12-20T18:48:02Z

← Older revision		Revision as of 20:48, 20 December 2022
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/~~Thin film deposition~~/Deposition_of_Silicon_Carbide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Carbide click here]'''

	<br clear="all" />		<br clear="all" />

Eves at 18:47, 20 December 2022

2022-12-20T18:47:13Z

← Older revision		Revision as of 20:47, 20 December 2022
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/~~Deposition of Silicon Carbide~~ click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition_of_Silicon_Carbide click here]'''

	<br clear="all" />		<br clear="all" />

Eves: /* Deposition of Silicon Carbide */

2022-12-20T18:46:26Z

Deposition of Silicon Carbide

← Older revision		Revision as of 20:46, 20 December 2022
Line 5:		Line 5:
	== Deposition of Silicon Carbide ==		== Deposition of Silicon Carbide ==

	~~Sicicon~~ Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System (Lesker)]]:		Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System (Lesker)]]:

	*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]		*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]

Eves at 18:46, 20 December 2022

2022-12-20T18:46:17Z

← Older revision		Revision as of 20:46, 20 December 2022
Line 5:		Line 5:
	== Deposition of Silicon Carbide ==		== Deposition of Silicon Carbide ==

	Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker):		Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System (Lesker)]]:

	*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]		*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]

Eves: /* Deposition of Sicicon Carbide */

2022-12-16T16:56:14Z

Deposition of Sicicon Carbide

← Older revision		Revision as of 18:56, 16 December 2022
Line 3:		Line 3:
	<br clear="all" />		<br clear="all" />

	== Deposition of ~~Sicicon~~ Carbide ==		== Deposition of Silicon Carbide ==

	Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker):		Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker):

	*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]		*[[/Deposition of SiC in Sputter-System Lesker\|Deposition of SiC in Sputter-System (Lesker)]]

Eves: Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Silicon Carbide click here]'''
== Deposition of Sicicon Carbide == Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker): */Deposition of SiC in Sputter-System Les..."

2022-12-15T19:48:57Z

Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Silicon Carbide click here]''' <br clear="all" /> == Deposition of Sicicon Carbide == Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker): */Deposition of SiC in Sputter-System Les..."

New page

'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Silicon Carbide click here]'''

<br clear="all" />

== Deposition of Sicicon Carbide ==

Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker):

*[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]]