Specific Process Knowledge/Thin film deposition/Deposition of Silicon - Revision history

Reet: /* Comparison of the methods for deposition of Silicon */

2025-07-07T22:22:39Z

Comparison of the methods for deposition of Silicon

← Older revision		Revision as of 00:22, 8 July 2025
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	\|few nm to >200 nm		\|few nm to >200 nm
	\|few nm to ?		\|few nm to ?
	\|few nm to 600 nm *		\|few nm to 600 nm
	\|-		\|-

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	\|		\|
	\|}		\|}

	~~'''*''' If you wish to deposit a thicker layer than 100 nm please talk to responsible staff or write to thinfilm@nanolab.dtu.dk~~

Reet: /* Comparison of the methods for deposition of Silicon */

2025-07-07T22:22:13Z

Comparison of the methods for deposition of Silicon

← Older revision		Revision as of 00:22, 8 July 2025
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	\|few nm to >200 nm		\|few nm to >200 nm
	\|few nm to ?		\|few nm to ?
	\|few nm to ~~100~~ nm *		\|few nm to 600 nm *
	\|-		\|-

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	\|		\|
	\|		\|
	\| ~~Please only deposit Si on the afternoon before a scheduled service as it can result in many flakes in the chamber. See the booking calendar or ask staff to find out when the next service will be.~~		\|
	\|}		\|}

	'''*''' If you wish to deposit a thicker layer than 100 nm please talk to responsible staff or write to thinfilm@nanolab.dtu.dk		'''*''' If you wish to deposit a thicker layer than 100 nm please talk to responsible staff or write to thinfilm@nanolab.dtu.dk

Reet: /* Deposition of Silicon using e-beam evaporation */

2025-07-07T22:19:54Z

Deposition of Silicon using e-beam evaporation

← Older revision		Revision as of 00:19, 8 July 2025
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	==Deposition of Silicon using e-beam evaporation==		==Deposition of Silicon using e-beam evaporation==
	It is possible to e-beam evaporate silicon at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]]. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.		It is possible to e-beam evaporate silicon at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]], where the substrate can be heated up to 250 °C. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si evaporation in E-beam evaporator Temescal-2\|Si evaporation in E-beam evaporator (10-pockets)]]		* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si evaporation in E-beam evaporator Temescal-2\|Si evaporation in E-beam evaporator (10-pockets)]]


	==Comparison of the methods for deposition of Silicon==		==Comparison of the methods for deposition of Silicon==

Reet: /* Deposition of Silicon using sputter deposition */

2025-07-07T22:19:29Z

Deposition of Silicon using sputter deposition

← Older revision		Revision as of 00:19, 8 July 2025
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	==Deposition of Silicon using sputter deposition==		==Deposition of Silicon using sputter deposition==

	At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like. In the cluster system you can heat the substrate up to 600 C.		At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like. In the cluster system you can heat the substrate up to 600 °C.

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''		* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''

Reet: /* Deposition of Silicon using sputter deposition */

2025-07-07T22:19:06Z

Deposition of Silicon using sputter deposition

← Older revision		Revision as of 00:19, 8 July 2025
Line 25:		Line 25:
	==Deposition of Silicon using sputter deposition==		==Deposition of Silicon using sputter deposition==

	At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like.		At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like. In the cluster system you can heat the substrate up to 600 C.

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''		* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''

Reet: /* Deposition of Silicon using sputter deposition */

2025-07-07T22:18:02Z

Deposition of Silicon using sputter deposition

← Older revision		Revision as of 00:18, 8 July 2025
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	At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like.		At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like.

	* [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec\|Si sputter deposition in the Wordentec]] (tool now decommissioned but general results may still be of interest)
	* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''		* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''
	* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)\|Si sputter deposition in the Sputter-System Metal-Oxide(PC1)]]		* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)\|Si sputter deposition in the Sputter-System Metal-Oxide(PC1)]]
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	It was previosly possible to sputter Si with our [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\| IonFab 300]]. You can read about the deposition conditions and results from that [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si\|here]].		It was previosly possible to sputter Si with our [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300\| IonFab 300]]. You can read about the deposition conditions and results from that [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si\|here]].

			Some parameters for sputter deposition of Si in the now-decomissioned Wordentec[[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec\| are found here]].

	==Deposition of Silicon using e-beam evaporation==		==Deposition of Silicon using e-beam evaporation==

Reet: /* Comparison of the methods for deposition of Silicon */

2025-07-07T22:15:50Z

Comparison of the methods for deposition of Silicon

← Older revision		Revision as of 00:15, 8 July 2025
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	! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon\|Furnace LPCVD PolySi]])		! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon\|Furnace LPCVD PolySi]])
	! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]])		! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]])
	~~! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])~~
	! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])		! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])
	! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])		! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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	\| Plasma Enhanced Chemical Vapor Deposition of Si		\| Plasma Enhanced Chemical Vapor Deposition of Si
	\| Sputter deposition of Si.		\| Sputter deposition of Si.
	~~\| Sputter deposition of Si.~~
	\| Sputter deposition of Si.		\| Sputter deposition of Si.
	\| E-beam evaporation of Si.		\| E-beam evaporation of Si.
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	\|Yes, B (boron) and P (phosphorus)		\|Yes, B (boron) and P (phosphorus)
	\|Yes, B and P		\|Yes, B and P
	~~\|None~~
	\|None		\|None
	\|None		\|None
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	\|New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned		\|New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned
	\|		\|
	\|~~RF Ar clean available~~		\|None
	~~\|RF Ar clean available~~
	\|RF Ar clean available		\|RF Ar clean available
	\|None		\|None
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	\|~5 nm to 2 µm, if thicker layers are needed please ask the furnace team.		\|~5 nm to 2 µm, if thicker layers are needed please ask the furnace team.
	\|few nm to ~ 600 nm		\|few nm to ~ 600 nm
	~~\|few nm to ~ 300 nm~~
	\|few nm to >200 nm		\|few nm to >200 nm
	\|few nm to ?		\|few nm to ?
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	*Phosphorous doped:~20 Å/min		*Phosphorous doped:~20 Å/min
	\|~6 Å/s can probably be higher		\|~6 Å/s can probably be higher
	\|
	~~On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec\|here.]]~~
	\| Depends on process parameters, roughly 0.2-2 Å/s. See Process Log.		\| Depends on process parameters, roughly 0.2-2 Å/s. See Process Log.
	\|Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance\|here]]		\|Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance\|here]]
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	\|560 °C (amorphous) and 620 °C (poly)		\|560 °C (amorphous) and 620 °C (poly)
	\|300 °C		\|300 °C
	~~\|room temperature~~
	\|room temperature		\|room temperature
	\|room temperature to 600 °C		\|room temperature to 600 °C
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	! Step coverage		! Step coverage
	\|Good		\|Good
	~~\|Medium~~
	\|Medium		\|Medium
	\|Medium		\|Medium
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	\|Good for fused silica, silicon oxide, silicon nitride, silicon		\|Good for fused silica, silicon oxide, silicon nitride, silicon
	\|Not tested, but do not deposit on top of silicon		\|Not tested, but do not deposit on top of silicon
	~~\| ~~
	\|		\|
	\|		\|
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	* 1x 100 mm wafer		* 1x 100 mm wafer
	* 1x 150 mm wafer		* 1x 150 mm wafer
	\|
	*24x 2" wafers or
	*6x 4" wafers or
	*6x 6" wafers

	\|		\|
	* Up to 1x6" wafers		* Up to 1x6" wafers
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	* Quartz/fused silica wafers (RCA cleaned)		* Quartz/fused silica wafers (RCA cleaned)
	\|		\|
	*See the cross contamination sheets		*See the cross contamination sheets.
	\|
	*Almost any that does not degas.
	\|		\|
	* Almost any that does not degas, see cross-contamination sheet		* Almost any that does not degas, see cross-contamination sheet
	\|		\|
	*Almost any that does not degas~~, see~~ cross-contamination sheets		*Almost any that does not degas at your intended substrate temperature. See also cross-contamination sheets.
	\|		\|
	*Almost any that does not degas~~, see~~ cross-contamination ~~sheets~~		*Almost any that does not degas at your intended substrate temperature. See also cross-contamination sheet.

	\|-		\|-
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	\|		\|
	*See the cross contamination sheets		*See the cross contamination sheets
	\|
	* Almost any that does not degas.

	\|		\|
	*Almost any that does not degas, see the cross-contamination sheet		*Almost any that does not degas, see the cross-contamination sheet
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	\|Only in PECVD3		\|Only in PECVD3
	\|		\|
	\|
	\|		\|
	\| Please only deposit Si on the afternoon before a scheduled service as it can result in many flakes in the chamber. See the booking calendar or ask staff to find out when the next service will be.		\| Please only deposit Si on the afternoon before a scheduled service as it can result in many flakes in the chamber. See the booking calendar or ask staff to find out when the next service will be.

Reet: /* Deposition of Silicon using sputter deposition */

2025-07-07T22:11:05Z

Deposition of Silicon using sputter deposition

← Older revision		Revision as of 00:11, 8 July 2025
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	==Deposition of Silicon using sputter deposition==		==Deposition of Silicon using sputter deposition==

	At Nanolab we can sputter silicon ~~the using Wordentec or~~ the Lesker Sputter systems. One of the advantages of sputtering is that you can deposit on almost any material you like.		At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like.

	* [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec\|Si sputter deposition in the Wordentec]]		* [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec\|Si sputter deposition in the Wordentec]] (tool now decommissioned but general results may still be of interest)
	* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''		* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker\|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress''
	* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)\|Si sputter deposition in the Sputter-System Metal-Oxide(PC1)]]		* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)\|Si sputter deposition in the Sputter-System Metal-Oxide(PC1)]]

Mmat: /* Deposition of PolySilicon using LPCVD */

2025-06-20T20:19:36Z

Deposition of PolySilicon using LPCVD

← Older revision		Revision as of 22:19, 20 June 2025
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	==Deposition of PolySilicon using LPCVD==		==Deposition of PolySilicon using LPCVD==
	DTU Nanolab has two furnaces for the deposition of [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon \| ~~Polysilicon~~ using Low Chemical Vapour Deposition]] (LPCVD).		DTU Nanolab has two furnaces for the deposition of [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon \| PolySilicon using Low Chemical Vapour Deposition]] (LPCVD).

	We have a 6" furnace (installed in 2011) for the deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for the deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers.		We have a 6" furnace (installed in 2011) for the deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for the deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers.
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	In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively.		In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively.

	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 4" polysilicon furnace\|Deposition of ~~Polysilicon~~ using the 4" ~~Polysilicon~~ Furnace]]		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 4" polysilicon furnace\|Deposition of PolySilicon using the 4" PolySilicon Furnace]]

	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 6" polysilicon furnace\|Deposition of ~~Polysilicon~~ using the 6" ~~Polysilicon~~ Furnace]]		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 6" polysilicon furnace\|Deposition of PolySilicon using the 6" PolySilicon Furnace]]

	==Deposition of Silicon using PECVD==		==Deposition of Silicon using PECVD==

Mmat: /* Deposition of PolySilicon using LPCVD */

2025-06-20T20:01:28Z

Deposition of PolySilicon using LPCVD

← Older revision		Revision as of 22:01, 20 June 2025
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	In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively.		In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively.

	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/~~Deposition using~~ the 4" ~~Polysilicon Furnace~~\|Deposition of Polysilicon using the 4" Polysilicon Furnace]]		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 4" polysilicon furnace\|Deposition of Polysilicon using the 4" Polysilicon Furnace]]

	*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/~~Deposition using~~ the 6" ~~Polysilicon Furnace~~\|Deposition of Polysilicon using the 6" Polysilicon Furnace]]		*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 6" polysilicon furnace\|Deposition of Polysilicon using the 6" Polysilicon Furnace]]

	==Deposition of Silicon using PECVD==		==Deposition of Silicon using PECVD==