Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride - Revision history

Eves at 09:33, 29 July 2025

2025-07-29T09:33:28Z

← Older revision		Revision as of 11:33, 29 July 2025
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride&action=submit click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride&action=submit click here]'''

			=Scandium nitride (ScN)=

			Scandium nitride (ScN) is a rocksalt‑structure semiconductor with an indirect bandgap near 0.9 eV and a direct transition around 2.1 eV, combining high electron mobility, excellent thermal stability, and notable hardness in a chemically inert matrix.
			It is deposited by reactive magnetron sputtering for dense, textured films and by atomic layer deposition (ALD) when ultra-conformal, thickness-precise coatings are required on high-aspect-ratio or temperature-sensitive structures.
			In microelectronics, ScN functions as a diffusion barrier or seed layer, a lattice‑matched buffer for GaN/AlGaN power devices, and an emerging channel or contact material for high‑mobility transistors and thermoelectric modules.
			During reactive sputtering of AlN, elemental Sc is routinely co‑sputtered to form Al₁₋ₓScₓN, whose enhanced piezoelectric coefficients and ferroelectric phases enable next‑generation MEMS resonators, RF filters, and non‑volatile FeFET memories.
			Optically, ScN’s tunable plasma frequency supports near‑IR plasmonics, hot‑carrier photodetectors, and durable high‑temperature absorbers, while doped ScN shows adjustable n‑type conductivity and potential room‑temperature ferromagnetism for spintronic devices.
			Its high hardness, oxidation resistance, and decent thermal conductivity further suit ScN for protective coatings, MEMS layers, and thermoelectric power generators in harsh environments, underscoring its versatility across semiconductor, photonic, and engineering applications.

	== Deposition of Scandium Nitride ==		== Deposition of Scandium Nitride ==

Mmat at 17:25, 10 June 2025

2025-06-10T17:25:20Z

← Older revision		Revision as of 19:25, 10 June 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride&action=submit click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride&action=submit click here]'''

	~~<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>~~

	== Deposition of Scandium Nitride ==		== Deposition of Scandium Nitride ==

Eves at 11:56, 9 November 2023

2023-11-09T11:56:03Z

← Older revision		Revision as of 13:56, 9 November 2023
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	* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (ScN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (ScN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)

	At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.		At the moment (October 2023) we have a 4-inch Sc target (0.250" thick, bonded to Cu) for PC3 Src1.

Eves: /* Deposition of Scandium Nitride */

2023-11-09T11:55:40Z

Deposition of Scandium Nitride

← Older revision		Revision as of 13:55, 9 November 2023
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	The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:		The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (Sc) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (ScN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)

	At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.		At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.

Eves at 11:00, 9 November 2023

2023-11-09T11:00:32Z

← Older revision		Revision as of 13:00, 9 November 2023
Line 9:		Line 9:
	The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:		The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive RF Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (Sc) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (Sc) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)

	At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.		At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.

Eves at 10:59, 9 November 2023

2023-11-09T10:59:56Z

← Older revision		Revision as of 12:59, 9 November 2023
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	<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>		<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>

	== Deposition of ~~Niobium Titanium~~ Nitride ==		== Deposition of Scandium Nitride ==

	Deposition of ScN can only be done by reactive sputtering using Sc target.		Deposition of ScN can only be done by reactive sputtering using Sc target.
Line 9:		Line 9:
	The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:		The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

	* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive RF Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (Sc) using reactive RF sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)		* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive RF Sputtering in Cluster Lesker PC3\|Deposition of Scandium Nitride (Sc) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)

	At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.		At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.

Eves: Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride&action=submit click here]''' Unless otherwise stated, this page is written by DTU Nanolab internal == Deposition of Niobium Titanium Nitride == Deposition of ScN can only be done by reactive sputtering using Sc target. The on..."

2023-11-09T10:44:41Z

Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride&action=submit click here]''' Unless otherwise stated, this page is written by DTU Nanolab internal == Deposition of Niobium Titanium Nitride == Deposition of ScN can only be done by reactive sputtering using Sc target. The on..."

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride&action=submit click here]'''

 Unless otherwise stated, this page is written by DTU Nanolab internal

== Deposition of Niobium Titanium Nitride ==

Deposition of ScN can only be done by reactive sputtering using Sc target.

The only tool for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.:

* [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive RF Sputtering in Cluster Lesker PC3|Deposition of Scandium Nitride (Sc) using reactive RF sputtering]] in Sputter-System Metal-Nitride(PC3) Source 1 (4-inch target)

At the moment (October 2023) we have a 4-inch Sc target (0.250" thick bonded to Cu) for PC3 Src1.