Specific Process Knowledge/Thin film deposition/Deposition of NiFe - Revision history

Eves at 15:55, 28 July 2025

2025-07-28T15:55:42Z

Reet at 08:14, 9 June 2023

2023-06-09T08:14:51Z

← Older revision		Revision as of 10:14, 9 June 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiFe click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiFe click here]'''

	''Contents by DTU Nanolab staff except where otherwise noted''		''Contents by DTU Nanolab staff except where otherwise noted.''

	=Deposition of NiFe alloy=		=Deposition of NiFe alloy=

Reet at 08:14, 9 June 2023

2023-06-09T08:14:41Z

← Older revision		Revision as of 10:14, 9 June 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiFe click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiFe click here]'''

			''Contents by DTU Nanolab staff except where otherwise noted''

	=Deposition of NiFe alloy=		=Deposition of NiFe alloy=

Reet: /* Stress in films deposited at high temperature */

2022-09-09T15:33:07Z

Stress in films deposited at high temperature

← Older revision		Revision as of 17:33, 9 September 2022
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	==Stress in films deposited at high temperature==		==Stress in films deposited at high temperature==
	In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar (a type of NiFe alloy) deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer ~~used~~ in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system].		In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar (a type of NiFe alloy) deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer allowed in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system].

	Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.		Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.

Reet: /* Stress in films deposited at high temperature */

2020-03-26T12:07:49Z

Stress in films deposited at high temperature

← Older revision		Revision as of 14:07, 26 March 2020
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	==Stress in films deposited at high temperature==		==Stress in films deposited at high temperature==
	In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer used in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system].		In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar (a type of NiFe alloy) deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer used in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system].

	Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.		Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.

Reet: /* Stress in films deposited at high temperature */

2020-03-26T12:06:37Z

Stress in films deposited at high temperature

← Older revision		Revision as of 14:06, 26 March 2020
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	==Stress in films deposited at high temperature==		==Stress in films deposited at high temperature==
	In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr.		In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer used in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system].

	Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.		Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.

Reet: /* Stress in films deposited at high temperature */

2020-03-26T11:43:27Z

Stress in films deposited at high temperature

← Older revision		Revision as of 13:43, 26 March 2020
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	==Stress in films deposited at high temperature==		==Stress in films deposited at high temperature==
	In 2017, Radu Malureanu measured a tensile stress of about 100 MPa on thin films of Invar deposited at 600 °C. Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here].		In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr.

			Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.

Reet at 10:48, 25 March 2020

2020-03-25T10:48:40Z

← Older revision		Revision as of 12:48, 25 March 2020
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	=Deposition of NiFe alloy=		=Deposition of NiFe alloy=
	NiFe has been deposited in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker\|Sputter System (Lesker)]] here at Nanolab. ~~Below you~~ will find ~~some results of varying~~ the deposition ~~parameters~~ in ~~that particular setup~~. ~~You can find more information on~~ the ~~process~~ parameters used by others in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.		NiFe has been deposited in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker\|Sputter System (Lesker)]] here at Nanolab.
			You will find information on the pressure, max power and expected deposition rate [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker#List_of_available_targets_for_the_Sputter-System.28Lesker.29_.2803_June_2013.29 here] in LabAdviser.
			To see all the deposition parameters used in that machine by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.

			Below you will find some results on optimizing the film crystalline quality for NiFe by Bjarke Thomas Dalslet. Bjarke also investigated the surface roughness of NiFe as a function of change in the substrate bias, but found little variation.

	==Film quality optimization==		==Film quality optimization==

Reet: /* Deposition of NiFe alloy */

2020-03-24T12:31:20Z

Deposition of NiFe alloy

← Older revision		Revision as of 14:31, 24 March 2020
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	=Deposition of NiFe alloy=		=Deposition of NiFe alloy=
	NiFe has been deposited in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker\|Sputter System (Lesker)]] here at Nanolab. Below you will find some results of varying the deposition parameters. You can find more information on the process parameters used by others in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.		NiFe has been deposited in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker\|Sputter System (Lesker)]] here at Nanolab. Below you will find some results of varying the deposition parameters in that particular setup. You can find more information on the process parameters used by others in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.

	==Film quality optimization==		==Film quality optimization==

Reet at 12:25, 24 March 2020

2020-03-24T12:25:56Z

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiFe click here]'''
-==Deposition of Nickel Iron alloy==
+=Deposition of NiFe alloy=
-Nickel Iron alloy, e.g., Invar, has been sputter deposited in the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Sputter-system (Lesker)]] here at Nanolab.
+==Film quality optimization==
-You will find detailed results of varying the process parameters when sputtering Ni-Fe in the Lesker sputter system [[/Sputtering of NiFe in the Lesker sputter system|here]].
+The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing.

← Older revision		Revision as of 17:55, 28 July 2025
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	To see all the deposition parameters used in that machine by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.		To see all the deposition parameters used in that machine by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.

	Below you will find some results on optimizing the film crystalline quality for NiFe by Bjarke Thomas Dalslet. Bjarke also investigated the surface roughness of NiFe as a function of change in the substrate bias, but found ~~little~~ variation.		Below you will find some results on optimizing the film crystalline quality for NiFe by Bjarke Thomas Dalslet. Bjarke also investigated the surface roughness of NiFe as a function of change in the substrate bias, but found slight variation.

	==Film quality optimization==		==Film quality optimization==

	''By Bjarke Thomas Dalslet @Nanotech.dtu.dk''		''By Bjarke Thomas Dalslet @Nanotech.dtu.dk''

	The Lesker CMS 18 sputter system can produce films ~~in a wide range~~ of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing.		The Lesker CMS 18 sputter system can produce films of varying qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing.

	Strain estimations ~~was~~ done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films using low angle x-ray diffraction, for various substrates. It was found that the strain of the film influenced the resistance (R) and anisotropic magneto resistance (AMR) of the films (this relationship is also documented in literature); A Ta interface layer reduced R and increased AMR on both Si and SiO<math>_2</math> substrates while reducing strain.		Strain estimations were done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films using low-angle x-ray diffraction, for various substrates. It was found that the strain of the film influenced the resistance (R) and anisotropic magneto resistance (AMR) of the films (this relationship is also documented in literature); A Ta interface layer reduced R and increased AMR on both Si and SiO<math>_2</math> substrates while reducing strain.

	This study was then done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films deposited on 3 nm Ta on top of a SiO<math>_2</math> substrate, using R and AMR as an indication of strain. As seen in the tables, applying a substrate bias increases AMR and conductance (1/R). ~~An equivalent~~ effect is ~~seen~~ when ~~heating~~ the substrate during deposition. This heating can also be done after deposition without ~~loosing~~ the ~~effect~~.		This study was then done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films deposited on 3 nm Ta on top of a SiO<math>_2</math> substrate, using R and AMR as an indication of strain. As seen in the tables, applying a substrate bias increases AMR and conductance (1/R). A similar effect is observed when the substrate is heated during deposition. This heating can also be done after deposition without losing the impact.

	{\| {{table}} border="1" cellspacing="0" cellpadding="8"		{\| {{table}} border="1" cellspacing="0" cellpadding="8"
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	==Stress in films deposited at high temperature==		==Stress in films deposited at high temperature==
	In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar (a type of NiFe alloy) deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer allowed in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system].
			In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar (a type of NiFe alloy) deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high temperature is no longer allowed in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system].

	Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.		Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general.