Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide - Revision history

Eves: /* ALD Deposition of Hafnium Oxide */

2025-07-28T16:08:26Z

ALD Deposition of Hafnium Oxide

← Older revision		Revision as of 18:08, 28 July 2025
Line 18:		Line 18:

	More information about hafnium oxide deposition can be found here:		More information about hafnium oxide deposition can be found here:


	*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD deposition of HfO<sub>2</sub> in ALD1]]		*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD deposition of HfO<sub>2</sub> in ALD1]]

Eves: /* ALD Deposition of Hafnium Oxide */

2025-07-28T16:08:19Z

ALD Deposition of Hafnium Oxide

← Older revision		Revision as of 18:08, 28 July 2025
Line 17:		Line 17:
	Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.		Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.

	More information about hafnium oxide deposition can be found here: ~~for~~ [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD1]] ~~and for~~ [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD2 ~~(PEALD)~~]].		More information about hafnium oxide deposition can be found here:


			*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD deposition of HfO<sub>2</sub> in ALD1]]

			*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD deposition of HfO<sub>2</sub> in ALD2]].

	==Deposition of hafnium oxide==		==Deposition of hafnium oxide==

Eves at 16:06, 28 July 2025

2025-07-28T16:06:24Z

← Older revision		Revision as of 18:06, 28 July 2025
Line 5:		Line 5:

	<br clear="all" />		<br clear="all" />


	=Hafnium oxide (HfO₂)=		=Hafnium oxide (HfO₂)=

Eves: /* Deposition of Hafnium Oxide */

2025-07-28T16:06:15Z

Deposition of Hafnium Oxide

← Older revision		Revision as of 18:06, 28 July 2025
Line 16:		Line 16:
	Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications.		Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications.

	== Deposition of Hafnium Oxide ==		== ALD Deposition of Hafnium Oxide ==
	Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.		Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.

Eves: /* Hafnium oxide (HfO₂) */

2025-07-28T16:05:29Z

Hafnium oxide (HfO₂)

← Older revision		Revision as of 18:05, 28 July 2025
Line 13:		Line 13:
	In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.		In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.
	Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.		Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.
	Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a ~~worthwhile~~ material for MEMS passivation, diffusion barriers, biocompatible protective layers, and harsh~~-environment coatings~~.		Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a suitable material for MEMS passivation, diffusion barriers, biocompatible protective layers, and coatings in harsh environments.
	Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone thin~~-film material~~ across semiconductor, photonic, and engineering applications.		Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications.

	== Deposition of Hafnium Oxide ==		== Deposition of Hafnium Oxide ==
	Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1~~, as the ALD2 is mainly dedicated to nitride deposition~~.		Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.

	More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD2 (PEALD)]].		More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD2 (PEALD)]].

Eves at 16:05, 28 July 2025

2025-07-28T16:05:09Z

← Older revision		Revision as of 18:05, 28 July 2025
Line 5:		Line 5:

	<br clear="all" />		<br clear="all" />


			=Hafnium oxide (HfO₂)=

			Hafnium oxide (HfO₂) is a wide‑bandgap, high‑κ dielectric (κ ≈ 20–25) valued for its large breakdown field, thermal/chemical stability, and excellent CMOS compatibility.
			It is deposited by magnetron sputtering for dense optical and protective coatings, and by atomic layer deposition (ALD) when ultra-thin, conformal, and thickness-precise films are required on high-aspect-ratio structures, such as FinFETs, 3D NAND, and trench capacitors.
			In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.
			Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.
			Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a worthwhile material for MEMS passivation, diffusion barriers, biocompatible protective layers, and harsh-environment coatings.
			Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone thin-film material across semiconductor, photonic, and engineering applications.

	== Deposition of Hafnium Oxide ==		== Deposition of Hafnium Oxide ==
	Thin films of hafnium oxide, HfO<sub>2</sub>, can ~~both~~ be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated ~~for~~ nitride deposition.		Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated to nitride deposition.

	More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD2 (PEALD)]].		More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD2 (PEALD)]].

Reet at 09:35, 9 June 2023

2023-06-09T09:35:54Z

← Older revision		Revision as of 11:35, 9 June 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Hafnium_Oxide click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Hafnium_Oxide click here]'''
	<!-- Replace "http://labadviser.danchip.dtu.dk/..." wih the link to the Labadviser page-->		<!-- Replace "http://labadviser.danchip.dtu.dk/..." wih the link to the Labadviser page-->

			''All contents by Nanolab staff.''

	<br clear="all" />		<br clear="all" />

Eves: /* Deposition of Hafnium Oxide */

2022-01-20T15:19:46Z

Deposition of Hafnium Oxide

← Older revision		Revision as of 17:19, 20 January 2022
Line 7:		Line 7:
	Thin films of hafnium oxide, HfO<sub>2</sub>, can both be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.		Thin films of hafnium oxide, HfO<sub>2</sub>, can both be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.

	More information about hafnium oxide deposition can be found here: for [[~~Specific Process Knowledge~~/~~Thin film deposition~~/~~ALD Picosun R200~~/~~HfO2 deposition using ALD~~\|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD2 (PEALD)]].		More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page\|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2\|ALD2 (PEALD)]].

	==Deposition of hafnium oxide==		==Deposition of hafnium oxide==

Pevo: /* Deposition of hafnium oxide */

2018-05-14T12:01:15Z

Deposition of hafnium oxide

← Older revision		Revision as of 14:01, 14 May 2018
Line 16:		Line 16:
	\|-		\|-
	\|-style="background:silver; color:black"		\|-style="background:silver; color:black"
	!		\|

	![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]]		![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]]
	\|		![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD2 (PEALD)]].
	*
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
Line 26:		Line 24:
	\|		\|
	*Atomic Layer Deposition		*Atomic Layer Deposition
			\|
			*(Plasma enhanced) Atomic Layer Deposition
	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	!Stoichiometry		!Stoichiometry
	\|		\|
	*~~HfO2~~		*HfO<sub>2</sub>
	\|		\|
	*		*HfO<sub>2</sub>
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Film Thickness		!Film Thickness
	\|		\|
	* 0 nm - 50 nm		*0 nm - 100 nm
	\|		\|
	*		*0 nm - 50 nm
	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	!Deposition rate		!Deposition rate
	\|		\|
	* 0.~~0827~~ nm/cycle ~~on a flat sample~~		* At 150 <sup>o</sup>C: 0.11 nm/cycle
	* 0.~~954-0.122~~ nm/cycle ~~on a high aspect ratio structures~~		* At 250 <sup>o</sup>C: 0.0827 nm/cycle
	\|		\|
	*		* At 250 <sup>o</sup>C: 0.0804 nm/cycle
			* At 250 <sup>o</sup>C on trenches: 0.954-1.22 nm/cycle
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Step coverage		!Step coverage
			\|
			*Very good.
	\|		\|
	*Very good		*Very good
	\|
	*
	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	!~~Process~~ Temperature		!Temperature window
	\|		\|
	* 150 - 300<sup>o</sup>C		*150 <sup>o</sup>C - 300 <sup>o</sup>C
	\|		\|
	*		*150 <sup>o</sup>C - 300 <sup>o</sup>C
	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	!Substrate size		!Substrate size
	\|		\|
	*Several small samples		*1-5 100 mm wafers (only good uniformity for the top wafer)
	*1-5 50 mm wafers		*1-5 150 mm wafer (only good uniformity for the top wafer)
	*1-5 ~~100~~ mm ~~wafers~~		*1 200 mm wafer
	*1~~-5 150~~ mm wafer		*Several smaller samples
	\|		\|
	*		*1 100 mm wafer
			*1 150 mm wafer
			*1 200 mm wafer
			*Several smaller samples
	\|-		\|-
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
Line 79:		Line 83:
	*Silicon oxide, silicon nitride		*Silicon oxide, silicon nitride
	*Quartz/fused silica		*Quartz/fused silica
	*~~Al, Al<sub>2</sub>O<sub>3</sub>~~		*Metals (use dedicated carrier wafer)
	*Ti, TiO<sub>2</sub>
	*Other metals (use dedicated carrier wafer)
	*III-V materials (use dedicated carrier wafer)		*III-V materials (use dedicated carrier wafer)
	*Polymers (depending on the melting point/deposition temperature, use carrier wafer)		*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
	\|		\|
	*		*Silicon
			*Silicon oxide, silicon nitride
			*Quartz/fused silica
			*Metals (use dedicated carrier wafer)
			*III-V materials (use dedicated carrier wafer)
			*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
	\|-		\|-
	\|}		\|}

Pevo: /* Deposition of hafnium oxide */

2018-05-14T11:48:11Z

Deposition of hafnium oxide

← Older revision		Revision as of 13:48, 14 May 2018
Line 18:		Line 18:
	!		!

	![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|~~ALD~~]]		![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD1]]
	\|		\|
	*		*