Specific Process Knowledge/Thin film deposition/Deposition of Germanium - Revision history

Reet: /* Resistive Thermal evaporation */

2025-07-07T22:27:31Z

Resistive Thermal evaporation

← Older revision		Revision as of 00:27, 8 July 2025
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	==Resistive Thermal evaporation==		==Resistive Thermal evaporation==

			Current process information on Ge thermal evaporation:
	* [[/Thermal Ge evaporation Thermal Evaporator\|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]		* [[/Thermal Ge evaporation Thermal Evaporator\|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]

Reet: /* Resistive Thermal evaporation */

2025-07-07T22:27:00Z

Resistive Thermal evaporation

← Older revision		Revision as of 00:27, 8 July 2025
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	* [[/Thermal Ge evaporation Thermal Evaporator\|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]		* [[/Thermal Ge evaporation Thermal Evaporator\|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]

	Some very instrument specific deposition parameters for a now-decommissioned tool can be found here: * [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]		Some very instrument specific deposition parameters for a now-decommissioned tool can be found here: [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]

	==Ge deposition equipment comparison==		==Ge deposition equipment comparison==

Reet: /* Resistive Thermal evaporation */

2025-07-07T22:26:51Z

Resistive Thermal evaporation

← Older revision		Revision as of 00:26, 8 July 2025
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	==Resistive Thermal evaporation==		==Resistive Thermal evaporation==
	* [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]

	* [[/Thermal Ge evaporation Thermal Evaporator\|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]		* [[/Thermal Ge evaporation Thermal Evaporator\|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]

			Some very instrument specific deposition parameters for a now-decommissioned tool can be found here: * [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]

	==Ge deposition equipment comparison==		==Ge deposition equipment comparison==

Reet: /* Ge deposition equipment comparison */

2025-07-07T22:24:54Z

Ge deposition equipment comparison

← Older revision		Revision as of 00:24, 8 July 2025
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	\|-style="background:silver; color:black"		\|-style="background:silver; color:black"
	!		!
	~~! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])~~
	! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator\|Thermal Evaporator]])		! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator\|Thermal Evaporator]])
	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! General description		! General description
	~~\|Thermal deposition of Ge~~
	\|Thermal deposition of Ge		\|Thermal deposition of Ge
	\|E-beam deposition of Ge		\|E-beam deposition of Ge
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Pre-clean		! Pre-clean
	~~\|none~~
	\|none		\|none
	\|Ar ion etch (only in E-beam evaporator Temescal)		\|Ar ion etch (only in E-beam evaporator Temescal)
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! Layer thickness		! Layer thickness
	~~\|10 Å to about 2000 Å (in total distributed on all loaded wafers)~~
	\|10 Å to about 2000 Å		\|10 Å to about 2000 Å
	\|few nm to about 1 µm*		\|few nm to about 1 µm*
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Deposition rate		! Deposition rate
	~~\|0.4 Å/s - ~ 2 Å/s~~
	\|1 Å/s		\|1 Å/s
	\|1 Å/s - 5 Å/s		\|1 Å/s - 5 Å/s
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! Batch size		! Batch size
	\|
	*24x 2" wafers or
	*6x 4" wafers or
	*6x 6" wafers or
	~~Many small pieces~~
	\|		\|
	*4x 2" wafers or		*4x 2" wafers or
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	! Allowed materials		! Allowed materials
	\|		\|
	Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=~~167 cross-contamination sheet].~~		Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
	\|
	~~Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167~~ cross-contamination sheet].
	\|		\|
	Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].		Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].

Eves: /* Thermal deposition */

2024-02-07T15:15:20Z

Thermal deposition

← Older revision		Revision as of 17:15, 7 February 2024
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	Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.		Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.

	==Thermal ~~deposition~~==		==Resistive Thermal evaporation==
	* [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]		* [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]

Eves: /* Ge deposition equipment comparison */

2024-02-07T15:06:50Z

Ge deposition equipment comparison

← Older revision		Revision as of 17:06, 7 February 2024
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	!		!
	! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])		! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])
			! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator\|Thermal Evaporator]])
	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])
	! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])		! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! General description		! General description
			\|Thermal deposition of Ge
	\|Thermal deposition of Ge		\|Thermal deposition of Ge
	\|E-beam deposition of Ge		\|E-beam deposition of Ge
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Pre-clean		! Pre-clean
			\|none
	\|none		\|none
	\|Ar ion etch (only in E-beam evaporator Temescal)		\|Ar ion etch (only in E-beam evaporator Temescal)
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	! Layer thickness		! Layer thickness
	\|10 Å to about 2000 Å (in total distributed on all loaded wafers)		\|10 Å to about 2000 Å (in total distributed on all loaded wafers)
			\|10 Å to about 2000 Å
	\|few nm to about 1 µm*		\|few nm to about 1 µm*
	\|10 Å to at least 1000 Å		\|10 Å to at least 1000 Å
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	! Deposition rate		! Deposition rate
	\|0.4 Å/s - ~ 2 Å/s		\|0.4 Å/s - ~ 2 Å/s
			\|1 Å/s
	\|1 Å/s - 5 Å/s		\|1 Å/s - 5 Å/s
	\|Depends on deposition parameters		\|Depends on deposition parameters
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	*6x 4" wafers or		*6x 4" wafers or
	*6x 6" wafers or		*6x 6" wafers or
			Many small pieces
			\|
			*4x 2" wafers or
			*3x 4" wafers or
			*1x 6" wafers or
			*1x 8" wafers or
	Many small pieces		Many small pieces
	\|		\|
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	! Allowed materials		! Allowed materials
			\|
			Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
	\|		\|
	Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].		Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].

Eves: /* Thermal deposition */

2024-02-07T15:02:41Z

Thermal deposition

← Older revision		Revision as of 17:02, 7 February 2024
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	* [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]		* [[/Thermal Ge deposition Wordentec\|Thermal deposition of Ge in Wordentec]]

			* [[/Thermal Ge evaporation Thermal Evaporator\|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]]

	==Ge deposition equipment comparison==		==Ge deposition equipment comparison==

Reet: /* Ge deposition equipment comparison */

2024-01-19T14:06:05Z

Ge deposition equipment comparison

← Older revision		Revision as of 16:06, 19 January 2024
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	! Allowed materials		! Allowed materials
	\|		\|
	*Almost any that does not degas ~~at your intended substrate temperature~~. See ~~also~~ the cross-contamination sheet		Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
	\|		\|
	*Almost any that does not degas. See ~~also~~ the cross-contamination sheet		Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].

	\|		\|
	*Almost any that does not degas at your intended substrate temperature. ~~See also the cross-contamination sheet~~		*Almost any that does not degas at your intended substrate temperature.
	\|		\|
	*Almost any that does not degas at your intended substrate temperature. See ~~also the~~ cross-contamination sheets		*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"

Reet: /* Ge deposition equipment comparison */

2024-01-19T14:04:43Z

Ge deposition equipment comparison

← Older revision		Revision as of 16:04, 19 January 2024
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	!		!
	! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])		! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec\|Wordentec]])
	! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|Temescal]])		! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal\|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|E-beam evaporator (10-pockets)]])
	! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])		! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker\|Lesker]])
	! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])		! Sputtering ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system\|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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	! Pre-clean		! Pre-clean
	\|none		\|none
	\|Ar ion beam ~~clean~~		\|Ar ion etch (only in E-beam evaporator Temescal)
	\|RF Ar clean		\|RF Ar clean
	\|RF Ar clean		\|RF Ar clean
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! Layer thickness		! Layer thickness
	\|~~10Å~~ to about ~~2000Å~~ (in total distributed on all loaded wafers)		\|10 Å to about 2000 Å (in total distributed on all loaded wafers)
	\|~~10Å~~ to about ~~1000 nm~~		\|few nm to about 1 µm*
	\|~~10Å~~ to at least 1000 Å		\|10 Å to at least 1000 Å
	\|~~10Å~~ to ?		\|10 Å to ?
	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Deposition rate		! Deposition rate
	\|~~From~~ 0.4 Å/s ~~up to about~~ ~2Å/s		\|0.4 Å/s - ~ 2 Å/s
	\|~~From~~ 1 Å/s ~~up to~~ 5 Å/s		\|1 Å/s - 5 Å/s
	\|Depends on deposition parameters		\|Depends on deposition parameters
	\|Depends on deposition parameters		\|Depends on deposition parameters
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"

	! Allowed ~~substrates~~		! Allowed materials
	\|		\|
	*Almost any that does not degas. See also the cross-contamination sheet		*Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet
	\|		\|
	*Almost any that does not degas. See also the cross-contamination sheet		*Almost any that does not degas. See also the cross-contamination sheet
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	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"

	~~!Allowed materials~~

	\|
	* Silicon oxide
	* Silicon (oxy)nitride
	* Photoresist
	* PMMA
	* Mylar
	* SU-8
	* Metals
	\|
	*Silicon oxide
	*Silicon (oxy)nitride
	*Photoresist
	*PMMA
	*Mylar
	*Metals
	*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
	\|
	*Almost any as above
	\|
	*Almost any as above
	~~\|-style="background:LightGrey; color:black"~~
	~~! Comment~~
	~~\|Recommended for unexposed e-beam resist~~
	\|
	\|
	\|
	\|}		\|}

			'''*''' ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.

Reet: /* Ge deposition equipment comparison */

2023-06-06T13:59:32Z

Ge deposition equipment comparison

← Older revision		Revision as of 15:59, 6 June 2023
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	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"
	! Pre-clean		! Pre-clean
	\|-		\|none
	\|Ar ion beam clean		\|Ar ion beam clean
	\|RF Ar clean		\|RF Ar clean
	\|RF Ar clean		\|RF Ar clean
	\|-		\|-

	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	! Layer thickness		! Layer thickness