Specific Process Knowledge/Thin film deposition/Deposition of CrSi - Revision history

Eves: /* Recipe */

2025-07-28T11:17:59Z

Recipe

← Older revision		Revision as of 13:17, 28 July 2025
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	It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool.		It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool.

	<gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths="~~600px~~" heights="~~500px~~" perrow="2">		<gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths="400px" heights="350px" perrow="2">
	image:eves_closed_dark_space_shield.png\| Closed dark space shield configuration.		image:eves_closed_dark_space_shield.png\| Closed dark space shield configuration.
	image:eves_Si_120W_20211110.png\|Uniformity of deposited Si layer across 6" wafer.		image:eves_Si_120W_20211110.png\|Uniformity of deposited Si layer across 6" wafer.

Eves at 12:25, 2 February 2023

2023-02-02T12:25:24Z

← Older revision		Revision as of 14:25, 2 February 2023
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	<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>		<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>
	All images and photos on this page ~~belonges~~ to <b>DTU Nanolab</b>.<br>		All images and photos on this page belongs to <b>DTU Nanolab</b>.<br>
	The fabrication and characterization described below were conducted in <b>2021-2022 by Evgeniy Shkondin</b> and <b>Henri Jansen, DTU Nanolab</b>.<br></i>		The fabrication and characterization described below were conducted in <b>2021-2022 by Evgeniy Shkondin</b> and <b>Henri Jansen, DTU Nanolab</b>.<br></i>

Eves at 15:38, 1 February 2023

2023-02-01T15:38:27Z

← Older revision		Revision as of 17:38, 1 February 2023
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	<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>		<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>
	All images and photos on this page belonges to <b>DTU Nanolab</b>.<br>		All images and photos on this page belonges to <b>DTU Nanolab</b>.<br>
	The fabrication and characterization described below were conducted in <b>2022 by Evgeniy Shkondin and Henri Jansen, DTU Nanolab</b>.<br></i>		The fabrication and characterization described below were conducted in <b>2021-2022 by Evgeniy Shkondin</b> and <b>Henri Jansen, DTU Nanolab</b>.<br></i>

Eves at 15:37, 1 February 2023

2023-02-01T15:37:36Z

← Older revision		Revision as of 17:37, 1 February 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_CrSi click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_CrSi click here]'''

			<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>
			All images and photos on this page belonges to <b>DTU Nanolab</b>.<br>
			The fabrication and characterization described below were conducted in <b>2022 by Evgeniy Shkondin and Henri Jansen, DTU Nanolab</b>.<br></i>


	=CrSi as a hard mask=		=CrSi as a hard mask=
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	This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used.		This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used.

	~~The deposition and characterization described below were conducted in <b>2021 by Evgeniy Shkondin and Henri Jansen, DTU Nanolab</b>.~~ Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements.		Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements.

	=Recipe=		=Recipe=

Eves at 14:14, 21 December 2022

2022-12-21T14:14:06Z

← Older revision		Revision as of 16:14, 21 December 2022
Line 1:		Line 1:
			'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_CrSi click here]'''

	=CrSi as a hard mask=		=CrSi as a hard mask=

Eves: /* CrSi Sputtering in Sputter-System Metal-Oxide(PC1) */

2022-01-11T22:43:53Z

CrSi Sputtering in Sputter-System Metal-Oxide(PC1)

← Older revision		Revision as of 00:43, 12 January 2022
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	This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used.		This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used.

	The deposition and characterization described below were conducted in <b>2021 by Evgeniy Shkondin, DTU Nanolab</b>. Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements.		The deposition and characterization described below were conducted in <b>2021 by Evgeniy Shkondin and Henri Jansen, DTU Nanolab</b>. Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements.


	=Recipe=		=Recipe=

Eves: Created page with "=CrSi as a hard mask= Cr is of particular interest in the dry etch as it serves as a durable hard mask in the quest to go beyond an aspect ratio of 100 in Si etching. To have..."

2022-01-11T15:20:37Z

Created page with "=CrSi as a hard mask= Cr is of particular interest in the dry etch as it serves as a durable hard mask in the quest to go beyond an aspect ratio of 100 in Si etching. To have..."

New page

=CrSi as a hard mask=

Cr is of particular interest in the dry etch as it serves as a durable hard mask in the quest to go beyond an aspect ratio of 100 in Si etching. To have a Cr pattern the user needs a longer approach. First, the CrSi layer has to be deposited, and then the user has to pattern photoresist. Depending on a feature size a DUV, e-beam, or UV –lithography can be implemented. The photoresist is used to etch the Si layer where the etching stops at the SiCr interface. Finally, a Cr layer is patterned using –F and –O radicals:

The full procedure is described in this article:
J. Vac. Sci. Technol. B 39, 032201 (2021) https://doi.org/10.1116/6.0000922

<gallery caption="The sequence of using CrSi as a hard mask" widths="1000px" heights="500px" perrow="1">
image:eves_Cr_hard_mask_20211220.png| Etch procedure of a 400 nm pitch grating pattern composed of 360 nm thick DUV resist on top of the sample stack: bulk Si + 70 nm Cr + 30 nm polySi + 65 nm Barc. The sample is etched without braking vacuum in the same system in a single run: (a) the initial measures before the etch, (b) after O-based directional Barc etch, (c) directional polySi etch, (d) isotropic polymer strip, (e) directional Cr etch, and (f) the final transfer into the bulk Si. Source: J. Vac. Sci. Technol. B 39, 032201 (2021)
</gallery>

=CrSi Sputtering in Sputter-System Metal-Oxide(PC1)=

This page presents the results of CrSi bilayer deposition using DC (for Cr) and RF (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" Cr and Si. Source #3(DC) and #1(RF) was used.

The deposition and characterization described below were conducted in 2021 by Evgeniy Shkondin, DTU Nanolab. Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements.

=Recipe=

The process in a Sputter-System Metal-Oxide(PC1) is based on two recipes:

* Single run recipe:
PEG2_PC1_Src3_and_Src1_upstream_CrSi
* Batch recipe:
MDC_PC1_Src3Src1-CrSi_UpsreamPEG2

* Deposition mode: Upstream
* Rotation speed: 10 rpm
* Pressure: 3 mTorr
* Power for Cr: 350 W
* Power for Si: 120 W (It is recomended to use 120W for best uniformity and optical constants fitting).
* Deposition rate: 0.33 nm/s for Cr and 0.029 nm/s for Si.
* Deposition temperature: room temperature

As it is mentioned above the DC source is used for Cr and the RF source is for Si.

The depositions of Si (RF) performed with closed dark space shield configuaration (see photography below).

It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool.

<gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths="600px" heights="500px" perrow="2">
image:eves_closed_dark_space_shield.png| Closed dark space shield configuration.
image:eves_Si_120W_20211110.png|Uniformity of deposited Si layer across 6" wafer.
</gallery>

Sample for Si deposition investigation was 6" Si wafer with 300nm SiO2 (from furnace C1 recipe: DRY1100 05:00:00 + 20 min annealing). However, there is a dedicated page for Si sputtering only.

=X-ray Reflectivity Analysis=

 
X-ray reflectivity (XRR) profiles for CrSi films at two different thicknesses (10/10 nm and 30/30 nm) has been obtained using Rigaku XRD SmartLab equipment. The voltage and current settings for the Cu X-ray tube were standard 40kV and 30mA. The incident optics contained a IPS (incident parallel slit) adaptor with 5 ° Soller slit. Other slits: IS=0.03mm RS1=0.03mm and RS2=0.075mm. Step size: 0.01 and measurement time - 5s for each point. Fitting procesure was performed using commercial GlobalFit software assuming the model based on Si substrate with native oxide followed by the deposited CrSi film with thin oxides and moisture surfaces. The results are summarized in a tables below.

<gallery caption="Sample model used in XRR analysis." widths="480px" heights="240px" perrow="1">
image:eves_SiCr_layer_model_20220103.png|Sample considers to have CrSi layer with oxide interlayers and top moisture deposited on natively oxidized silicon.
</gallery>

==10nm/10nm==

{| border="2" cellspacing="2" cellpadding="5" align="center"

|-
!colspan="6" border="none" style="background:silver; color:black;" align="center"| Layer parameter list
|-
|style="background:WhiteSmoke; color:black"|Layer name
|style="background:WhiteSmoke; color:black"|Thickness (nm)
|style="background:WhiteSmoke; color:black"|Density (g/cm3)
|style="background:WhiteSmoke; color:black"|Rougness (nm)
|style="background:WhiteSmoke; color:black"|Delta
|style="background:WhiteSmoke; color:black"|Beta

|-
|Moisture
|0.20
|0.82
|0.41
|style="background:WhiteSmoke; color:black"|2.5278e-6
|style="background:WhiteSmoke; color:black"|5.8699e-8

|-
|SiO2 (native oxide)
|0.53
|1.59
|0.22
|style="background:WhiteSmoke; color:black"|4.7577e-6
|style="background:WhiteSmoke; color:black"|6.2002e-8

|-
|a-Si (sputtered)
|15.46
|2.31
|0.00
|style="background:WhiteSmoke; color:black"|7.5294e-6
|style="background:WhiteSmoke; color:black"|1.7484e-7

|-
|Cr2O3 (interlayer)
|0.30
|6.61
|0.60
|style="background:WhiteSmoke; color:black"|2.0025e-5
|style="background:WhiteSmoke; color:black"|1.3935e-6

|-
|Cr (sputtered)
|11.95
|7.18
|0.00
|style="background:WhiteSmoke; color:black"|2.1109e-5
|style="background:WhiteSmoke; color:black"|2.1710e-6

|-
|SiO2 (native oxide)
|0.78
|2.03
|0.42
|style="background:WhiteSmoke; color:black"|6.4831e-6
|style="background:WhiteSmoke; color:black"|8.4487e-8

|-
|Si (wafer)
|<math>\infty</math>
|2.328
|0.00
|style="background:WhiteSmoke; color:black"|7.5795e-6
|style="background:WhiteSmoke; color:black"|1.7601e-7

|}

<gallery caption="XRR analysis of 10/10nm CrSi bilayer." widths="1500px" heights="500px" perrow="1">
image:eves_SiCr_10_10_20211220.png| X-ray reflectivity. Measurement and Fit.
</gallery>

==30nm/30nm==

{| border="2" cellspacing="2" cellpadding="5" align="center"

|-
!colspan="6" border="none" style="background:silver; color:black;" align="center"| Layer parameter list
|-
|style="background:WhiteSmoke; color:black"|Layer name
|style="background:WhiteSmoke; color:black"|Thickness (nm)
|style="background:WhiteSmoke; color:black"|Density (g/cm3)
|style="background:WhiteSmoke; color:black"|Rougness (nm)
|style="background:WhiteSmoke; color:black"|Delta
|style="background:WhiteSmoke; color:black"|Beta

|-
|Moisture
|0.70
|0.64
|0.1.39
|style="background:WhiteSmoke; color:black"|1.8383e-6
|style="background:WhiteSmoke; color:black"|4.2687e-8

|-
|SiO2 (native oxide)
|2.28
|2.32
|0.87
|style="background:WhiteSmoke; color:black"|7.5375e-6
|style="background:WhiteSmoke; color:black"|9.8229e-8

|-
|a-Si (sputtered)
|30.94
|2.34
|0.00
|style="background:WhiteSmoke; color:black"|7.6152e-6
|style="background:WhiteSmoke; color:black"|1.7684e-7

|-
|Cr2O3 (interlayer)
|0.45
|6.72
|1.13
|style="background:WhiteSmoke; color:black"|2.0379e-5
|style="background:WhiteSmoke; color:black"|1.4181e-6

|-
|Cr (sputtered)
|26.19
|7.09
|0.00
|style="background:WhiteSmoke; color:black"|2.0846e-5
|style="background:WhiteSmoke; color:black"|2.1440e-6

|-
|SiO2 (native oxide)
|1.54
|2.48
|0.42
|style="background:WhiteSmoke; color:black"|8.0544e-6
|style="background:WhiteSmoke; color:black"|1.0497e-7

|-
|Si (wafer)
|<math>\infty</math>
|2.328
|0.04
|style="background:WhiteSmoke; color:black"|7.5795e-6
|style="background:WhiteSmoke; color:black"|1.7601e-7

|}

<gallery caption="XRR analysis of 30/30nm CrSi bilayer." widths="1500px" heights="500px" perrow="1">
image:eves_SiCr_30_30_20211220.png| X-ray reflectivity. Measurement and Fit.
</gallery>