Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride - Revision history

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			=Aluminium Nitride (AlN)=

	Aluminum nitride (AlN) is a wide‑bandgap (~6.2 eV) ceramic that pairs very high thermal conductivity (> 200 W m<sup>-1</sup>K<sup>-1</sup> ), strong piezoelectric and acoustic properties, and a high dielectric breakdown field in a chemically inert, CMOS‑compatible matrix.		Aluminum nitride (AlN) is a wide‑bandgap (~6.2 eV) ceramic that pairs very high thermal conductivity (> 200 W m<sup>-1</sup>K<sup>-1</sup> ), strong piezoelectric and acoustic properties, and a high dielectric breakdown field in a chemically inert, CMOS‑compatible matrix.

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			Aluminum nitride (AlN) is a wide‑bandgap (~6.2 eV) ceramic that pairs very high thermal conductivity (> 200 W m<sup>-1</sup>K<sup>-1</sup> ), strong piezoelectric and acoustic properties, and a high dielectric breakdown field in a chemically inert, CMOS‑compatible matrix.
			It is deposited by reactive magnetron sputtering for dense, c-axis-oriented films widely used in RF devices, and by atomic layer deposition (ALD) when conformal, thickness-precise coatings are required on high-aspect-ratio or temperature-sensitive structures.
			In semiconductor technology, AlN acts as a nucleation or buffer layer for GaN power/high‑frequency devices, a robust passivation and diffusion barrier, and—when alloyed with Sc—to form ferroelectric AlScN for next‑generation non‑volatile FeFETs and piezoelectric MEMS actuators.
			Optically, its transparency from deep-UV to the IR and modest refractive index (~2.1) enable low-loss waveguides, UV LEDs/lasers, and protective or anti-reflective coatings that withstand high optical power and harsh environments.
			AlN’s strong piezoelectricity and high acoustic velocity underpin surface‑ and bulk‑acoustic‑wave filters, film bulk‑acoustic‑resonators, energy harvesters, and high‑Q MEMS resonators used in 5G RF front‑ends and timing devices.
			Beyond electronics and photonics, AlN substrates and thin films offer excellent thermal management for power modules, high-temperature, biocompatible passivation layers for sensors and implants, and mechanically robust coatings for corrosion and wear resistance, thereby cementing its role as a versatile thin-film material across semiconductor, optical, and engineering applications.


	= Deposition of Aluminium Nitride =		= Deposition of Aluminium Nitride =

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Reactive p-DC Sputtering of Aluminium Nitride (AlN)

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	==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==		==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==

	[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium/Sc Sputtering in Cluster Lesker PC3\|Sc]] and Al at different powers to get ScAlN thin films.		[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium/Sc Sputtering in Cluster Lesker PC3\|Sc]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al Sputtering in Cluster Lesker PC3\|Al]] at different powers to get ScAlN thin films.

	==Comparison of the methods for deposition of AlN==		==Comparison of the methods for deposition of AlN==

Eves: /* Reactive p-DC Sputtering of Aluminium Nitride (AlN) */

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Reactive p-DC Sputtering of Aluminium Nitride (AlN)

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	==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==		==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==

	[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both Sc and Al at different powers to get ScAlN thin films.		[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium/Sc Sputtering in Cluster Lesker PC3\|Sc]] and Al at different powers to get ScAlN thin films.

	==Comparison of the methods for deposition of AlN==		==Comparison of the methods for deposition of AlN==

Eves: /* Reactive p-DC Sputtering of Aluminium Nitride (AlN) */

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Reactive p-DC Sputtering of Aluminium Nitride (AlN)

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	==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==		==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==

	[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to dope the AlN with scandium. At DTU Nanolab, there is an option to perform co-sputtering of both Sc and Al at different powers to get ScAlN thin films.		[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3\|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both Sc and Al at different powers to get ScAlN thin films.

	==Comparison of the methods for deposition of AlN==		==Comparison of the methods for deposition of AlN==

Eves: /* Reactive p-DC Sputtering of Aluminium Nitride (AlN) */

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Reactive p-DC Sputtering of Aluminium Nitride (AlN)

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	==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==		==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==

	[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system~~#Process information~~\|~~Deposition conditions and acceptance test results~~]] for ~~sputter~~ deposition of AlN in the Sputter-System Metal-Nitride(PC3).		[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen. The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to dope the AlN with scandium. At DTU Nanolab, there is an option to perform co-sputtering of both Sc and Al at different powers to get ScAlN thin films.

	==Comparison of the methods for deposition of AlN==		==Comparison of the methods for deposition of AlN==

Eves: /* Atomic Layer Deposition of Aluminium Nitride (AlN) */

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Atomic Layer Deposition of Aluminium Nitride (AlN)

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	==Atomic Layer Deposition of Aluminium Nitride (AlN)==		==Atomic Layer Deposition of Aluminium Nitride (AlN)==

			Aluminium Nitride (AlN) can be deposited using the plasma-enhanced atomic layer deposition method from TMA and NH3 precursors. The process is well known, and the following link describes all the details:

	*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2\|AlN deposition using ALD2]]		*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2\|AlN deposition using ALD2]]

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	==Atomic Layer Deposition of Aluminium Nitride (AlN)==		==Atomic Layer Deposition of Aluminium Nitride (AlN)==

			*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2\|AlN deposition using ALD2]]

			==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==

			[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information\|Deposition conditions and acceptance test results]] for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3).

	==Comparison of the methods for deposition of AlN==		==Comparison of the methods for deposition of AlN==
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	~~Further process information can be found here:~~
	*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2\|AlN deposition using ALD2]]		*For further information on AlN deposition using the sputter systems, please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films.
	*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information\|Deposition conditions and acceptance test results]] for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3).
	*For further information on AlN deposition using the sputter systems please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films.

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Deposition of Aluminium Nitride

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	== Deposition of Aluminium Nitride ==		= Deposition of Aluminium Nitride =

	AlN films can be deposited by reactive sputtering or by atomic layer deposition (ALD).		AlN films can be deposited by reactive sputtering or by atomic layer deposition (ALD).

	In sputter systems, AlN can be deposited either by direct sputtering of an AlN target or by reactive sputtering with an Al target in a mixture of argon and nitrogen.		In sputter systems, AlN can be deposited either by direct sputtering of an AlN target or by reactive sputtering with an Al target in a mixture of argon and nitrogen.

			==Atomic Layer Deposition of Aluminium Nitride (AlN)==

	==Comparison of the methods for deposition of AlN==		==Comparison of the methods for deposition of AlN==

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Deposition of Aluminium Nitride

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	== Deposition of Aluminium Nitride ==		== Deposition of Aluminium Nitride ==

	AlN films can be deposited by sputtering or by atomic layer deposition (ALD).		AlN films can be deposited by reactive sputtering or by atomic layer deposition (ALD).

	In ~~the~~ sputter systems AlN can be either ~~deposited~~ by direct sputtering of an AlN target or reactive sputtering with an Al target in ~~mixtures~~ of argon and nitrogen.		In sputter systems, AlN can be deposited either by direct sputtering of an AlN target or by reactive sputtering with an Al target in a mixture of argon and nitrogen.

	==Comparison of the methods for deposition of AlN==		==Comparison of the methods for deposition of AlN==