Specific Process Knowledge/Thin film deposition/Deposition of Alumina - Revision history

Pevo at 10:07, 16 December 2024

2024-12-16T10:07:21Z

← Older revision		Revision as of 12:07, 16 December 2024
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	*1-5 100 mm wafers		*1-5 100 mm wafers
	*1-5 150 mm wafers		*1-5 150 mm wafers
			*1-3 200 mm wafers
	*Several smaller samples		*Several smaller samples
	\|		\|

Eves: /* Deposition of Al2O3 */

2024-02-07T14:31:56Z

Deposition of Al2O3

← Older revision		Revision as of 16:31, 7 February 2024
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	*[[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System(Lesker)]]		*[[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System(Lesker)]]
	*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance\|Sputter-System Metal-Oxide(PC1)]]		*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance\|Sputter-System Metal-Oxide(PC1)]]
	*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2\|Evaporation of ~~Al2O3~~ in E-~~beam evaporator~~ (10-pockets)]]		*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2\|Evaporation of Al<sub>2</sub>O<sub>3</sub> in E-Beam Evaporator (10-pockets)]]

	==Comparison of the methods for deposition of Alumium Oxide==		==Comparison of the methods for deposition of Alumium Oxide==

Eves: /* Deposition of aluminium oxide */

2024-02-07T14:30:47Z

Deposition of aluminium oxide

← Older revision		Revision as of 16:30, 7 February 2024
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	''All text by Nanolab staff''		''All text by Nanolab staff''

	==Deposition of ~~aluminium oxide~~==		==Deposition of Al<sub>2</sub>O<sub>3</sub>==
	Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.		Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.

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	*[[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System(Lesker)]]		*[[Specific Process Knowledge/Thin film deposition/Lesker\|Sputter-System(Lesker)]]
	*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance\|Sputter-System Metal-Oxide(PC1)]]		*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance\|Sputter-System Metal-Oxide(PC1)]]
			*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2\|Evaporation of Al2O3 in E-beam evaporator (10-pockets)]]

	==Comparison of the methods for deposition of Alumium Oxide==		==Comparison of the methods for deposition of Alumium Oxide==

Eves: /* Deposition of aluminium oxide */

2024-02-07T14:27:11Z

Deposition of aluminium oxide

← Older revision		Revision as of 16:27, 7 February 2024
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	==Deposition of aluminium oxide==		==Deposition of aluminium oxide==
	Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.		Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.

	*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]		*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]

Reet: /* Comparison of the methods for deposition of Alumium Oxide */

2024-01-22T13:14:07Z

Comparison of the methods for deposition of Alumium Oxide

← Older revision		Revision as of 15:14, 22 January 2024
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	!Process Temperature		!Process Temperature
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	* ~~Up to 400 °C~~		* room temperature
	\|		\|
	* Up to 600 °C		* Up to 600 °C

Reet: /* Comparison of the methods for deposition of Alumium Oxide */

2024-01-22T13:13:09Z

Comparison of the methods for deposition of Alumium Oxide

← Older revision		Revision as of 15:13, 22 January 2024
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	*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)		*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
	\|		\|
	*expect no ~~or very little~~ step coverage		* We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned.
	\|-		\|-

Reet: /* Deposition of aluminium oxide */

2024-01-19T13:13:56Z

Deposition of aluminium oxide

← Older revision		Revision as of 15:13, 19 January 2024
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	==Deposition of aluminium oxide==		==Deposition of aluminium oxide==
	Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition) or by sputtering. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.		Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.

	*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]		*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]

Reet: /* Comparison of the methods for deposition of Alumium Oxide */

2024-01-19T13:13:31Z

Comparison of the methods for deposition of Alumium Oxide

← Older revision		Revision as of 15:13, 19 January 2024
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	![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-System Metal-Oxide(PC1)]]		![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system\|Sputter-System Metal-Oxide(PC1)]]
	![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD Picosun 200]]		![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200\|ALD Picosun 200]]
			![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator\|10-pocket e-beam evaporator]]
	\|-		\|-

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	\|		\|
	*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>		*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
			\|
			*E-beam evaporation of Al<sub>2</sub>O<sub>3</sub> pellets or of Al in an O<sub>2</sub> flow
	\|-		\|-

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	*Al<sub>2</sub>O<sub>3</sub>, very good		*Al<sub>2</sub>O<sub>3</sub>, very good
			\|
			*Not tested yet
	\|-		\|-

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	\|		\|
	* 0nm - 100 nm		* 0nm - 100 nm
			\|
			*few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber)
	\|-		\|-

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	\|		\|
	*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)		*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
			\|
			* 1-2 Å/s
	\|-		\|-

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	\|		\|
	*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)		*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
			\|
			*expect no or very little step coverage
	\|-		\|-

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	* Up to 600 °C		* Up to 600 °C
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	*150 °C - 350 °C:		*150 °C - 350 °C
			\|
			* Up to 250 °C
	\|-		\|-

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	*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]		*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
			\|

	\|-		\|-

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	*1-5 150 mm wafers		*1-5 150 mm wafers
	*Several smaller samples		*Several smaller samples
			\|
			* chips
			* 1-3 x 100 mm wafers
			* 1-3 x 150 mm wafers
			* 1-3 x 200 mm wafers
	\|-		\|-

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	!'''Allowed materials'''		!'''Allowed materials'''
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	*almost any		*almost any that does not degas
	\|		\|
	*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet].		*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet].
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	*III-V materials (use dedicated carrier wafer)		*III-V materials (use dedicated carrier wafer)
	*Polymers (depending on the melting point/deposition temperature, use carrier wafer)		*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
			\|
			*almost any that does not degas. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]
	\|-		\|-
	\|}		\|}

Reet at 13:37, 1 June 2023

2023-06-01T13:37:41Z

← Older revision		Revision as of 15:37, 1 June 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Alumina click here]'''

			''All text by Nanolab staff''

	==Deposition of aluminium oxide==		==Deposition of aluminium oxide==

Paphol: /* Comparison of the methods for deposition of Alumium Oxide */

2022-08-31T11:51:34Z

Comparison of the methods for deposition of Alumium Oxide

← Older revision		Revision as of 13:51, 31 August 2022
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	* 0.3 nm/min		* 0.3 nm/min
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	* 1.7 nm/min		* About 1.7 nm/min, depends on sputtering parameters
	\|		\|
	*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)		*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)