Specific Process Knowledge/Thin film deposition/ALD Picosun R200 - Revision history

Eves: /* Process information */

2025-07-28T17:04:51Z

Process information

← Older revision		Revision as of 19:04, 28 July 2025
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	== Process information ==		== Process information ==

			=== Recipes ===

	*[[/Standard recipes on the ALD tool\|Standard recipes on the ALD 1 tool]]		*[[/Standard recipes on the ALD tool\|Standard recipes on the ALD 1 tool]]
	*[[/ALD multilayers\|Advanced recipes involving fabrication of multilayers]]		*[[/ALD multilayers\|Advanced recipes involving fabrication of multilayers]]

			=== Process details ===
	*[[/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]]		*[[/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]]
	*[[/TiO2 deposition using ALD\|TiO<sub>2</sub> deposition using ALD 1]]		*[[/TiO2 deposition using ALD\|TiO<sub>2</sub> deposition using ALD 1]]

Eves: /* Equipment performance and process related parameters */

2025-07-28T16:23:10Z

Equipment performance and process related parameters

← Older revision		Revision as of 18:23, 28 July 2025
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	*TiO<sub>2</sub>: 0 - 100 nm		*TiO<sub>2</sub>: 0 - 100 nm
	*HfO<sub>2</sub>: 0 - 100 nm		*HfO<sub>2</sub>: 0 - 100 nm
	<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. ~~Deposition~~ of thicker layers is not allowed, ~~because~~ this ~~will~~ occupy the machine for ~~long time and thus make it available for less~~ users. Long depositions also cause issues and with flakes and particles, ~~which~~ means that the chamber and the pump line will ~~have~~ to be cleaned or ~~changed~~ quite often. Furthermore, the delivery time on precursors is usually quite long. ~~So when you make~~ a sample design, ~~you should~~ avoid steps~~, where you need to deposit~~ thicker layers than 100 nm ~~with~~ ALD, ~~or you can~~ consider~~, if~~ the same material can be deposited using other machines in the cleanroom.</i>		<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. The deposition of thicker layers is not allowed, as this would occupy the machine for an extended period, thereby reducing its availability to fewer users. Long depositions also cause issues, and with flakes and particles, this means that the chamber and the pump line will need to be cleaned or replaced quite often. Furthermore, the delivery time on precursors is usually quite long. When creating a sample design, it is advisable to avoid steps that require depositing thicker layers than 100 nm using ALD. Alternatively, consider whether the same material can be deposited using other machines in the cleanroom.</i>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range

Eves: /* ALD - Atomic layer deposition */

2025-07-28T16:21:17Z

ALD - Atomic layer deposition

← Older revision		Revision as of 18:21, 28 July 2025
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	[[image:ALD.jpg\|300x300px\|right\|thumb\|ALD1, positioned in cleanroom F-2.]]		[[image:ALD.jpg\|300x300px\|right\|thumb\|ALD1, positioned in cleanroom F-2.]]

	The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase) and HfO<sub>2</sub> on different samples. ~~Layer~~ can be up to 100 nm thick, see the table below.		The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase), and HfO<sub>2</sub> on different samples. The layer can be up to 100 nm thick, see the table below.

	Each process ~~is using~~ two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in ~~turns, and in-between~~ each precursor pulse the chamber is purged with nitrogen. All reactions ~~have to~~ take place on the sample surface, ~~thus~~ it is ~~very important~~ that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited ~~atomic~~ layer by ~~atomic~~ layer by ALD.		Each process uses two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turn. Between each precursor pulse, the chamber is purged with nitrogen. All reactions must take place on the sample surface; therefore, it is crucial that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited atomically, layer by layer, by ALD.

	~~In order to~~ ensure ~~that~~ the ALD reactor ~~has the same~~ temperature ~~everywhere~~, it ~~has~~ a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is a vacuum chamber that ~~is isolating~~ the reactor from room air. The space between the two chambers is ~~called~~ an intermediate space (IMS), ~~and this~~ is constantly purged with nitrogen. A sample holder is placed in the reactor chamber.		To ensure the ALD reactor maintains a uniform temperature throughout, it features a dual-chamber structure. The inner chamber is the reactor chamber, and the outer chamber is a vacuum chamber that isolates the reactor from room air. The space between the two chambers is referred to as an intermediate space (IMS), which is constantly purged with nitrogen. A sample holder is placed in the reactor chamber.

	When the reactor chamber is heated up or cooled ~~down~~, it will take some time ~~before~~ the sample holder and the sample ~~reaches~~ the desired temperature. ~~Thus~~, it is ~~important~~ to ~~include~~ a temperature stabilization ~~time in~~ the process recipes.		When the reactor chamber is heated or cooled, it will take some time for the sample holder and the sample to reach the desired temperature. Therefore, it is essential to incorporate a temperature stabilization period into the process recipes.

	The ALD deposition takes place in the reactor chamber. All precursor and nitrogen carrier gas lines are connected to the reactor chamber through separate gas lines. The precursor pulse time is controlled using special ALD valves, that ~~allow~~ very short ~~precursors~~ pulses ~~to be introduced~~ into the ALD reactor ~~and at the same time allow~~ a constant nitrogen purge.		The ALD deposition takes place in the reactor chamber. All precursor and nitrogen carrier gas lines are connected to the reactor chamber through separate gas lines. The precursor pulse time is controlled using special ALD valves that enable the introduction of very short precursor pulses into the ALD reactor while maintaining a constant nitrogen purge.

	The ALD reaction takes place under vacuum, ~~thus~~ a vacuum pump is connected to the bottom of the ALD reactor chamber. The pump is located in the basement.		The ALD reaction takes place under vacuum; thus, a vacuum pump is connected to the bottom of the ALD reactor chamber. The pump is located in the basement.

	The liquid precursors (H<sub>2</sub>O, TMA, TiCl<sub>4</sub> and TEMAHf) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Only four of the precursors (~~normally~~ <sub>2</sub>O, TMA, TEMAHf and TiCl<sub>4</sub>) can be connected at the same time. Ozone is generated ~~by use of~~ an ozone generator ~~that is~~ located on the side of the machine.		The liquid precursors (H<sub>2</sub>O, TMA, TiCl<sub>4</sub>, and TEMAHf) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Only four of the precursors (usually H<sub>2</sub>O, TMA, TEMAHf, and TiCl<sub>4</sub>) can be connected at the same time. Ozone is generated using an ozone generator located on the side of the machine.

	It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch (up to five wafers at a time) or a number of smaller samples. Samples are loaded manually into the sample holder ~~by use of~~ a tweezer. However, for some materials the uniformity will only be good for the top sample(s) in a minibatch holder.		It is possible to change the sample holder so that ALD deposition can take place on different samples, e.g., a small wafer batch (up to five wafers at a time) or a number of smaller samples. Samples are loaded manually into the sample holder using a tweezer. However, for some materials, the uniformity will only be good for the top sample(s) in a minibatch holder.

	A short presentation with some information about the ALD tool can be found [[Media:ProcessMeeting ALD 2013-12-06_1.pdf\|here]].		A short presentation with some information about the ALD tool can be found [[Media:ProcessMeeting ALD 2013-12-06_1.pdf\|here]].

Eves: /* Process information */

2025-07-28T16:18:40Z

Process information

← Older revision		Revision as of 18:18, 28 July 2025
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	*[[/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]]		*[[/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]]
	*[[/TiO2 deposition using ALD\|TiO<sub>2</sub> deposition using ALD 1]]		*[[/TiO2 deposition using ALD\|TiO<sub>2</sub> deposition using ALD 1]]
	*[[/ZnO deposition using ALD\|ZnO deposition using ALD 1~~. ''Obsolete - ZnO should now be deposited in ALD2''~~]]		*[[/ZnO deposition using ALD\|ZnO deposition using ALD 1]]
	*[[/AZO deposition using ALD\|Al-doped ZnO (AZO) deposition using ALD 1~~. ''Obsolete - AZO should now be deposited in ALD2''~~]]		*[[/AZO deposition using ALD\|Al-doped ZnO (AZO) deposition using ALD 1]]
	<!--*[[/HfO2 deposition using ALD\|HfO<sub>2</sub> deposition using ALD 1]]-->		<!--*[[/HfO2 deposition using ALD\|HfO<sub>2</sub> deposition using ALD 1]]-->
	*[[/HfO2 deposition using ALD new page\|HfO<sub>2</sub> deposition using ALD 1]]		*[[/HfO2 deposition using ALD new page\|HfO<sub>2</sub> deposition using ALD 1]]

Pevo: /* Equipment performance and process related parameters */

2024-04-30T08:57:13Z

Equipment performance and process related parameters

← Older revision		Revision as of 10:57, 30 April 2024
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	*1-5 100 mm wafers		*1-5 100 mm wafers
	*1-5 150 mm wafers		*1-5 150 mm wafers
			*1-3 200 mm wafers
	*Several smaller samples		*Several smaller samples
	\|-		\|-

Pevo: /* Equipment performance and process related parameters */

2023-08-15T12:40:21Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:40, 15 August 2023
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	*TiO<sub>2</sub>: 0 - 100 nm		*TiO<sub>2</sub>: 0 - 100 nm
	*HfO<sub>2</sub>: 0 - 100 nm		*HfO<sub>2</sub>: 0 - 100 nm
	<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>		<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range

Pevo: /* Equipment performance and process related parameters */

2023-08-15T12:40:02Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:40, 15 August 2023
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	*TiO<sub>2</sub>: 0 - 100 nm		*TiO<sub>2</sub>: 0 - 100 nm
	*HfO<sub>2</sub>: 0 - 100 nm		*HfO<sub>2</sub>: 0 - 100 nm
	<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>		<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range

Pevo: /* Equipment performance and process related parameters */

2023-08-15T12:37:22Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:37, 15 August 2023
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	*TiO<sub>2</sub>: 0 - 100 nm		*TiO<sub>2</sub>: 0 - 100 nm
	*HfO<sub>2</sub>: 0 - 100 nm		*HfO<sub>2</sub>: 0 - 100 nm
	<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also ~~causes~~ issues and with flakes and particles, which ~~mean~~ that the chamber and the pump line will have to cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same ~~materials~~ can be deposited using other machines in the cleanroom.</i>		<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range

Pevo: /* Equipment performance and process related parameters */

2023-08-15T12:30:57Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:30, 15 August 2023
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	*TiO<sub>2</sub>: 0 - 100 nm		*TiO<sub>2</sub>: 0 - 100 nm
	*HfO<sub>2</sub>: 0 - 100 nm		*HfO<sub>2</sub>: 0 - 100 nm
	<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because ~~they~~ will occupy the machine for long time and thus make it available for less users. Long depositions issues and with flakes and particles, which ~~means~~ that chamber and the pump line will have to cleaned or changed quite often. Furthermore, the delivery time on ~~precursor~~ is usually quite long. So we you make a sample design, you should avoid to steps, where you need to deposit thicker ~~layer~~ than 100 nm with ALD, or you can consider, if the same materials can be deposited using other machines in the cleanroom.</i>		<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also causes issues and with flakes and particles, which mean that the chamber and the pump line will have to cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same materials can be deposited using other machines in the cleanroom.</i>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Process parameter range

Pevo: /* ALD - Atomic layer deposition */

2023-08-15T12:28:51Z

ALD - Atomic layer deposition

← Older revision		Revision as of 14:28, 15 August 2023
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	[[image:ALD.jpg\|300x300px\|right\|thumb\|ALD1, positioned in cleanroom F-2.]]		[[image:ALD.jpg\|300x300px\|right\|thumb\|ALD1, positioned in cleanroom F-2.]]

	The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase) and HfO<sub>2</sub> on different samples.		The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase) and HfO<sub>2</sub> on different samples. Layer can be up to 100 nm thick, see the table below.

	Each process is using two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited atomic layer by atomic layer by ALD.		Each process is using two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited atomic layer by atomic layer by ALD.

← Older revision		Revision as of 18:18, 28 July 2025
Line 40:		Line 40:
	*[[/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]]		*[[/Al2O3 deposition using ALD\|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]]
	*[[/TiO2 deposition using ALD\|TiO<sub>2</sub> deposition using ALD 1]]		*[[/TiO2 deposition using ALD\|TiO<sub>2</sub> deposition using ALD 1]]
	*[[/ZnO deposition using ALD\|ZnO deposition using ALD 1~~. ''Obsolete - ZnO should now be deposited in ALD2''~~]]		*[[/ZnO deposition using ALD\|ZnO deposition using ALD 1]]
	*[[/AZO deposition using ALD\|Al-doped ZnO (AZO) deposition using ALD 1~~. ''Obsolete - AZO should now be deposited in ALD2''~~]]		*[[/AZO deposition using ALD\|Al-doped ZnO (AZO) deposition using ALD 1]]
	<!--*[[/HfO2 deposition using ALD\|HfO<sub>2</sub> deposition using ALD 1]]-->		<!--*[[/HfO2 deposition using ALD\|HfO<sub>2</sub> deposition using ALD 1]]-->
	*[[/HfO2 deposition using ALD new page\|HfO<sub>2</sub> deposition using ALD 1]]		*[[/HfO2 deposition using ALD new page\|HfO<sub>2</sub> deposition using ALD 1]]