Specific Process Knowledge/Thin film deposition/ALD2 (PEALD) - Revision history

Pevo: /* Process information */

2025-11-17T08:54:30Z

Process information

← Older revision		Revision as of 10:54, 17 November 2025
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	*[[/HfO2 deposition using ALD2\| HfO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']]		*[[/HfO2 deposition using ALD2\| HfO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']]

	*[[/SiO2 deposition using ALD2\| SiO<sub>2</sub> deposition using '''ALD 2 (PEALD)''' - The process is obsolete]]

	*[[/AlN deposition using ALD2\| AlN deposition using '''ALD 2 (PEALD)''']]		*[[/AlN deposition using ALD2\| AlN deposition using '''ALD 2 (PEALD)''']]
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	*[[/Al2O3 deposition using plasma ALD2 at room temperature\| Al<sub>2</sub>O<sub>3</sub> deposition using '''ALD 2 (PEALD)''' at room temperature]]		*[[/Al2O3 deposition using plasma ALD2 at room temperature\| Al<sub>2</sub>O<sub>3</sub> deposition using '''ALD 2 (PEALD)''' at room temperature]]

			'''Obsolete process:'''

			*[[/SiO2 deposition using ALD2\| SiO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']]

	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==

Pevo: /* Equipment performance and process related parameters */

2025-11-17T08:53:23Z

Equipment performance and process related parameters

← Older revision		Revision as of 10:53, 17 November 2025
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	=ALD 2 (PEALD)=		=ALD 2 (PEALD)=

	[[Category: Equipment\|Thin film]]		[[index.php?title=Category:Equipment\|Thin film]]
	[[Category: Thin Film Deposition\|ALD]]		[[index.php?title=Category:Thin Film Deposition\|ALD]]


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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm		*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm
	*Nitrides: ~~SiO<sub>2</sub>,~~ AlN, TiN: 0-100 nm		*Nitrides: AlN, TiN: 0-100 nm
	<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>		<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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Pevo: /* Thermal ALD and PEALD */

2025-11-17T08:52:27Z

Thermal ALD and PEALD

← Older revision		Revision as of 10:52, 17 November 2025
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	The precursor pulse time is controlled by special ALD valves that allow very short precursor pulses to be introduced into the ALD reactor chamber and at the same time allow a constant nitrogen or argon flow. Thus, nitrogen and argon are always flowing through the ALD valves into the chamber, independent on whether a precursor pulse is introduced or not.		The precursor pulse time is controlled by special ALD valves that allow very short precursor pulses to be introduced into the ALD reactor chamber and at the same time allow a constant nitrogen or argon flow. Thus, nitrogen and argon are always flowing through the ALD valves into the chamber, independent on whether a precursor pulse is introduced or not.

	At the moment it is possible to deposit Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO~~<sub>2</sub>, SiO~~<sub>2</sub>, AlN and TiN in the ALD. In order to deposit good quality nitride layers with low sheet resistance, the amount of oxygen has to be very low. Thus, the ALD reactor chamber has to be passivated for about three days, before nitride depositions can be done, and oxides and nitrides cannot be deposited at same time.		At the moment it is possible to deposit Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, AlN and TiN in the ALD. In order to deposit good quality nitride layers with low sheet resistance, the amount of oxygen has to be very low. Thus, the ALD reactor chamber has to be passivated for about three days, before nitride depositions can be done, and oxides and nitrides cannot be deposited at same time.

	Samples are loaded through a load lock. 6" and 8" wafers can be loaded directly in the load lock, while 4" wafers and smaller samples have to be placed on a 6" carrier plate or a 6" silicon dummy wafer with an etched recess. It is only possible to load one wafer or carrier plate at a time by use of the load lock.		Samples are loaded through a load lock. 6" and 8" wafers can be loaded directly in the load lock, while 4" wafers and smaller samples have to be placed on a 6" carrier plate or a 6" silicon dummy wafer with an etched recess. It is only possible to load one wafer or carrier plate at a time by use of the load lock.

Pevo: /* Equipment performance and process related parameters */

2023-08-15T12:41:06Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:41, 15 August 2023
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	*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm		*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm
	*Nitrides: SiO<sub>2</sub>, AlN, TiN: 0-100 nm		*Nitrides: SiO<sub>2</sub>, AlN, TiN: 0-100 nm
	<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>		<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter

Pevo: /* Equipment performance and process related parameters */

2023-08-15T12:37:13Z

Equipment performance and process related parameters

← Older revision		Revision as of 14:37, 15 August 2023
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	*Al<sub>2</sub>O<sub>3</sub> - Thermal Al<sub>2</sub>O<sub>3</sub> (mainly backup for ALD1) and Al<sub>2</sub>O<sub>3</sub> using plasma		*Al<sub>2</sub>O<sub>3</sub> - Thermal Al<sub>2</sub>O<sub>3</sub> (mainly backup for ALD1) and Al<sub>2</sub>O<sub>3</sub> using plasma
	*TiO<sub>2</sub> (amorphous or anatase) - Thermal TiO<sub>2</sub> (mainly backup for ALD1) and TiO<sub>2</sub> using plasma		*TiO<sub>2</sub> (amorphous or anatase) - Thermal TiO<sub>2</sub> (mainly backup for ALD1) and TiO<sub>2</sub> using plasma
	*SiO<sub>2</sub> - SiO<sub>2</sub> using plasma (<i>March 2020: SiO<sub>2</sub> depositions gives very bad results</i>)
	*HfO<sub>2</sub> - Thermal HfO<sub>2</sub> (mainly backup for ALD1)		*HfO<sub>2</sub> - Thermal HfO<sub>2</sub> (mainly backup for ALD1)
	*AlN - AlN using plasma		*AlN - AlN using plasma
	*TiN - Thermal TiN and TiN using plamsa		*TiN - Thermal TiN and TiN using plamsa
	Is is not possible to deposit oxides and nitrides at the same time		*ZnO
			*AZO
			All precursors might not be available at the same time.
			Is is not possible to deposit oxides and nitrides at the same time.
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	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Performance		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Performance
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	*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm		*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm
	*Nitrides: SiO<sub>2</sub>, AlN, TiN: 0-100 nm		*Nitrides: SiO<sub>2</sub>, AlN, TiN: 0-100 nm
	<i>As the purpose of ALD 2 is to deposit very thin and uniform layers~~, and because the deposition is very slow~~, the allowed deposition thickness is limited to 100 nm. It is not allowed to make ~~more~~ depositions in the ~~same sample(s)~~ to ~~get~~ a ~~thicker layer. If~~ you ~~want~~ to deposit a thicker ~~layer~~ than 100 nm, you ~~need an approval from one of~~ the ~~responsible persons. It might also~~ be ~~possible to use~~ other machines in the cleanroom ~~for the deposition of the same materials~~</~~sub~~>		<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter

Pevo: /* Thermal ALD and PEALD */

2023-08-15T12:32:17Z

Thermal ALD and PEALD

← Older revision		Revision as of 14:32, 15 August 2023
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	[[image:ALD2.jpg\|450x450px\|right\|thumb\|ALD 2 (PEALD). Positioned in cleanroom F-2.]]		[[image:ALD2.jpg\|450x450px\|right\|thumb\|ALD 2 (PEALD). Positioned in cleanroom F-2.]]

	The ALD 2 (PEALD) is used to deposit very thin and uniform layers of different materials, by use of thermal ALD (Atomic Layer Deposition) or PEALD (Plasma Enhanced ALD).		The ALD 2 (PEALD) is used to deposit very thin and uniform layers of different materials, by use of thermal ALD (Atomic Layer Deposition) or PEALD (Plasma Enhanced ALD). Layers can be up to 100 nm thick, see the table below.

	The ALD deposition takes place in an ALD reactor chamber. In order to ensure that the temperature inside this reactor is the same everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is isolating the reactor chamber from room air. Both the inner and the outer chamber are under vacuum. The space between the two chambers is called an intermediate space (IMS), and the IMS is constantly purged with nitrogen.		The ALD deposition takes place in an ALD reactor chamber. In order to ensure that the temperature inside this reactor is the same everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is isolating the reactor chamber from room air. Both the inner and the outer chamber are under vacuum. The space between the two chambers is called an intermediate space (IMS), and the IMS is constantly purged with nitrogen.
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	[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=365 ALD 2 (PEALD) info page in LabManager]		[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=365 ALD 2 (PEALD) info page in LabManager]


	== Process information ==		== Process information ==

Pevo: /* Equipment performance and process related parameters */

2023-08-11T07:53:06Z

Equipment performance and process related parameters

← Older revision		Revision as of 09:53, 11 August 2023
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	\|style="background:LightGrey; color:black"\|Thickness		\|style="background:LightGrey; color:black"\|Thickness
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	Oxides: *Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm		*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm
	Nitrides: *SiO<sub>2</sub>, AlN, TiN: 0-100 nm		*Nitrides: SiO<sub>2</sub>, AlN, TiN: 0-100 nm
	<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, and because the deposition is very slow, the allowed deposition thickness is limited to 100 nm. It is not allowed to make more depositions in the same sample(s) to get a thicker layer. If you want to deposit a thicker layer than 100 nm, you need an approval from one of the responsible persons. It might also be possible to use other machines in the cleanroom for the deposition of the same materials</sub>		<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, and because the deposition is very slow, the allowed deposition thickness is limited to 100 nm. It is not allowed to make more depositions in the same sample(s) to get a thicker layer. If you want to deposit a thicker layer than 100 nm, you need an approval from one of the responsible persons. It might also be possible to use other machines in the cleanroom for the deposition of the same materials</sub>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter

Pevo: /* Equipment performance and process related parameters */

2023-08-11T07:52:15Z

Equipment performance and process related parameters

← Older revision		Revision as of 09:52, 11 August 2023
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	\|style="background:LightGrey; color:black"\|Thickness		\|style="background:LightGrey; color:black"\|Thickness
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>: ~~Maximum~~ 100 nm ~~(without permission)~~		Oxides: *Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm
	*SiO<sub>2</sub>, AlN, TiN: ~~Maximum 50~~ nm (~~without permission~~)		Nitrides: *SiO<sub>2</sub>, AlN, TiN: 0-100 nm
			<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, and because the deposition is very slow, the allowed deposition thickness is limited to 100 nm. It is not allowed to make more depositions in the same sample(s) to get a thicker layer. If you want to deposit a thicker layer than 100 nm, you need an approval from one of the responsible persons. It might also be possible to use other machines in the cleanroom for the deposition of the same materials</sub>
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	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter

Pevo at 12:54, 6 February 2023

2023-02-06T12:54:56Z

← Older revision		Revision as of 14:54, 6 February 2023
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD2_(PEALD) click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD2_(PEALD) click here]'''

			''This page is written by DTU Nanolab internal''

	=ALD 2 (PEALD)=		=ALD 2 (PEALD)=

Eves: /* Process information */

2022-08-29T19:05:19Z

Process information

← Older revision		Revision as of 21:05, 29 August 2022
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	*[[/TiN deposition using ALD2\| TiN deposition using '''ALD 2 (PEALD)''']]		*[[/TiN deposition using ALD2\| TiN deposition using '''ALD 2 (PEALD)''']]

			*[[/Al2O3 deposition using plasma ALD2 at room temperature\| Al<sub>2</sub>O<sub>3</sub> deposition using '''ALD 2 (PEALD)''' at room temperature]]

	==Equipment performance and process related parameters==		==Equipment performance and process related parameters==