Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD - Revision history

Mmat at 15:00, 21 May 2025

2025-05-21T15:00:30Z

← Older revision		Revision as of 17:00, 21 May 2025
Line 1:		Line 1:
			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''
			<br>
	~~''This page is written by DTU Nanolab internal''~~		<br>


	The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.		The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.

Line 49:		Line 49:
	</gallery>		</gallery>

	Evgeniy Shkondin, DTU Danchip, April-May 2014.		Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), April-May 2014.


Line 73:		Line 73:
	<br clear="all" />		<br clear="all" />

	Evgeniy Shkondin, DTU Danchip, 2014.		Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), 2014.

Pevo at 09:27, 19 June 2023

2023-06-19T09:27:29Z

← Older revision		Revision as of 11:27, 19 June 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''

	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''


	~~Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''~~

	The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.		The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.

Pevo at 09:26, 19 June 2023

2023-06-19T09:26:57Z

← Older revision		Revision as of 11:26, 19 June 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?

			''This page is written by DTU Nanolab internal''


			Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''

	The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.		The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.

Jmli at 20:23, 25 November 2019

2019-11-25T20:23:56Z

← Older revision		Revision as of 22:23, 25 November 2019
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''

	The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.		The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.

Pevo at 10:22, 23 January 2018

2018-01-23T10:22:43Z

← Older revision		Revision as of 12:22, 23 January 2018
Line 6:		Line 6:

	For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).		For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).

Pevo at 10:22, 23 January 2018

2018-01-23T10:22:30Z

← Older revision		Revision as of 12:22, 23 January 2018
Line 6:		Line 6:

	For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).		For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).


	====TiO<sub>2</sub> standard recipe====		====TiO<sub>2</sub> standard recipe====
Line 32:		Line 33:
	\|-		\|-
	\|}		\|}


	====TiO<sub>2</sub> deposition rates====		====TiO<sub>2</sub> deposition rates====
Line 44:		Line 46:

	Evgeniy Shkondin, DTU Danchip, April-May 2014.		Evgeniy Shkondin, DTU Danchip, April-May 2014.


	====TiO<sub>2</sub> results====		====TiO<sub>2</sub> results====
Line 67:		Line 70:

	Evgeniy Shkondin, DTU Danchip, 2014.		Evgeniy Shkondin, DTU Danchip, 2014.


	====TiO<sub>2</sub> deposition on trenches====		====TiO<sub>2</sub> deposition on trenches====

Pevo at 11:47, 28 August 2015

2015-08-28T11:47:43Z

← Older revision		Revision as of 13:47, 28 August 2015
Line 67:		Line 67:

	Evgeniy Shkondin, DTU Danchip, 2014.		Evgeniy Shkondin, DTU Danchip, 2014.

			====TiO<sub>2</sub> deposition on trenches====

			For TiO<sub>2</sub> deposition on trenches more information can be found here:

			*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD\|TiO<sub>2</sub> deposition on trenches using ALD]]

Pevo at 12:59, 4 August 2015

2015-08-04T12:59:50Z

@@ Line 42: / Line 42: @@
 image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C.
 </gallery>
 ====TiO<sub>2</sub> results====
@@ Line 63: / Line 65: @@
 <br clear="all" />
 Evgeniy Shkondin, DTU Danchip, 2014.

Pevo at 07:58, 4 August 2015

2015-08-04T07:58:33Z

← Older revision		Revision as of 09:58, 4 August 2015
Line 64:		Line 64:
	<br clear="all" />		<br clear="all" />

	*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD\|TiO<sub>2</sub> deposition on trenches ~~using ALD]]~~		====TiO<sub>2</sub> deposition on trenches====

			For TiO<sub>2</sub> deposition on trenches more information can be found here:

			*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD\|TiO<sub>2</sub> deposition on trenches using ALD]]

	Below some SEM images of amorphous TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well.		Below some SEM images of amorphous TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well.

Pevo: /* TiO2 results */

2015-08-04T07:54:13Z

TiO2 results

@@ Line 57: / Line 57: @@
 image:TiO2 350C 1250 cycles Si_HF_treated.jpg| Temperature 350 <sup>o</sup>C, 1250 cycles, HF treated.
 </gallery>
 Below some SEM images of amorphous TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well.
@@ Line 73: / Line 83: @@
 image:TiO2 trenches-300C-3.jpg|
 </gallery>