Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace - Revision history

Pevo at 10:07, 30 August 2024

2024-08-30T10:07:35Z

← Older revision		Revision as of 12:07, 30 August 2024
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	The Anneal Oxide furnace (C1) is the used for annealing, ~~wet~~ and dry oxidation of 4" and 6" wafers.		The Anneal Oxide furnace (C1) is the used for annealing, and for dry and wet oxidation of 4" and 6" wafers.

	Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] )~~, which gives a very good oxide quality and uniformity.~~		Water vapour for wet oxidation is generated by use of a steamer, which gives a very good oxide quality and uniformity.

			A new steamer has been installed in August 2024. The new steamer is from Bronkhorst and similar to the one on the E1. The old steamer was from Rasirc.

			<!-- ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] )-->


	==Calculation for wet oxidation==		==Calculation for wet oxidation==

			<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b>


	The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:		The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:
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	==Test of the wet oxidation by steamer==		==Test of the wet oxidation by steamer==

			<b><span style="color:Red">The information is this section is not up-to-date, because it is based on oxidation results obtained with the old Rasirc steamer. This steamer has been replaced with a Bronkhorst steamer in August 2024, and this has slightly affected the oxidation rate for wet oxide.</span></b>

	''by Patama Pholprasit @nanolab in October 2014''		''by Patama Pholprasit @nanolab in October 2014''
	'''		'''

Paphol at 08:45, 15 June 2023

2023-06-15T08:45:07Z

← Older revision		Revision as of 10:45, 15 June 2023
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	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''


			<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


	The Anneal Oxide furnace (C1) is the used for annealing, wet and dry oxidation of 4" and 6" wafers.		The Anneal Oxide furnace (C1) is the used for annealing, wet and dry oxidation of 4" and 6" wafers.

Jmli at 20:26, 25 November 2019

2019-11-25T20:26:13Z

← Older revision		Revision as of 22:26, 25 November 2019
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''

	The Anneal Oxide furnace (C1) is the used for annealing, wet and dry oxidation of 4" and 6" wafers.		The Anneal Oxide furnace (C1) is the used for annealing, wet and dry oxidation of 4" and 6" wafers.
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	==Test of the wet oxidation by steamer==		==Test of the wet oxidation by steamer==
	''by Patama Pholprasit @~~danchip~~ in October 2014''		''by Patama Pholprasit @nanolab in October 2014''
	'''		'''
	'''		'''

Pevo at 07:47, 15 August 2019

2019-08-15T07:47:53Z

← Older revision		Revision as of 09:47, 15 August 2019
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	Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good oxide quality and uniformity.		Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good oxide quality and uniformity.

	RCA cleaning is not required for new silicon wafers. Wafers from the A-stack, B-stack and E-stack furnaces and wafers from PECVD4 can go directly into the furnace. All other processed wafers will have to be RCA cleaned, before they are allowed in the furnace.




	The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.

	==Calculation for wet oxidation==		==Calculation for wet oxidation==

Pevo at 07:43, 15 August 2019

2019-08-15T07:43:35Z

← Older revision		Revision as of 09:43, 15 August 2019
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''

			The Anneal Oxide furnace (C1) is the used for annealing, wet and dry oxidation of 4" and 6" wafers.

			Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good oxide quality and uniformity.

			RCA cleaning is not required for new silicon wafers. Wafers from the A-stack, B-stack and E-stack furnaces and wafers from PECVD4 can go directly into the furnace. All other processed wafers will have to be RCA cleaned, before they are allowed in the furnace.




	The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.		The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.

Paphol: /* Calculation for wet oxidation */

2017-06-08T12:29:21Z

Calculation for wet oxidation

← Older revision		Revision as of 14:29, 8 June 2017
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	The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:		The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:

	[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1)_version_2.xlsx\|'''Calculation for wet oxidation''']] updated on June 2017		[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1)_version_2.xlsx\|'''Calculation for wet oxidation''']] ''updated on June 2017''

	==Test of the wet oxidation by steamer==		==Test of the wet oxidation by steamer==

Paphol: /* Calculation for wet oxidation */

2017-06-08T12:28:47Z

Calculation for wet oxidation

← Older revision		Revision as of 14:28, 8 June 2017
Line 7:		Line 7:
	The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:		The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:

	[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1)_version_2.xlsx\|'''Calculation for wet oxidation''']]		[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1)_version_2.xlsx\|'''Calculation for wet oxidation''']] updated on June 2017

	==Test of the wet oxidation by steamer==		==Test of the wet oxidation by steamer==

Paphol: /* Calculation for wet oxidation */

2017-06-08T10:46:23Z

Calculation for wet oxidation

← Older revision		Revision as of 12:46, 8 June 2017
Line 7:		Line 7:
	The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:		The following links give an approximate oxide time/thickness based on prediction equations from the following experiments:

	[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1).xlsx\|'''Calculation for wet oxidation''']]		[[media:Calculation_for_Wet_oxidation_for_Anneal_Oxide(C1)_version_2.xlsx\|'''Calculation for wet oxidation''']]

	==Test of the wet oxidation by steamer==		==Test of the wet oxidation by steamer==

Paphol at 08:17, 24 January 2017

2017-01-24T08:17:00Z

← Older revision		Revision as of 10:17, 24 January 2017
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxidation_C1_furnace click here]'''


	The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.		The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf\|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before.


	==Calculation for wet oxidation==		==Calculation for wet oxidation==

Bghe: /* Test of the wet oxidation by steamer */

2014-10-24T08:08:40Z

Test of the wet oxidation by steamer

← Older revision		Revision as of 10:08, 24 October 2014
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	==Test of the wet oxidation by steamer==		==Test of the wet oxidation by steamer==
	''by Patama Pholprasit @danchip in October 2014''==		''by Patama Pholprasit @danchip in October 2014''
	'''		'''
	'''		'''