Specific Process Knowledge/Thermal Process/Oxidation - Revision history

Pevo: /* Breakdown voltage measurements */

2025-09-16T12:40:03Z

Breakdown voltage measurements

← Older revision		Revision as of 14:40, 16 September 2025
Line 432:		Line 432:
	</gallery>		</gallery>

	===Breakdown voltage measurements===		==Breakdown voltage measurements==

	In order to evaluate the quality of the oxide layers that can be grown in the oxidation furnaces, some breakdown voltage measurement have been made.		In order to evaluate the quality of the oxide layers that can be grown in the oxidation furnaces, some breakdown voltage measurement have been made.

Pevo at 12:39, 16 September 2025

2025-09-16T12:39:45Z

← Older revision		Revision as of 14:39, 16 September 2025
Line 431:		Line 431:
	image:Oxide_thickness_vs_time_Dry_oxygen_111.JPG\|Dry oxide on <111> wafer. The y-axis is in Å and the x-axis is in minutes.		image:Oxide_thickness_vs_time_Dry_oxygen_111.JPG\|Dry oxide on <111> wafer. The y-axis is in Å and the x-axis is in minutes.
	</gallery>		</gallery>


	===Breakdown voltage measurements===		===Breakdown voltage measurements===

Pevo: /* Breakdown voltage measurements */

2025-09-16T12:39:31Z

Breakdown voltage measurements

← Older revision		Revision as of 14:39, 16 September 2025
Line 435:		Line 435:
	===Breakdown voltage measurements===		===Breakdown voltage measurements===

	~~Breakdown measurements have been done for A1 Boron Drive-in/Pre-dep furnace, A2 Gate Oxide furnace and A3 Phosphorus drive-~~in furnaces ~~in November 2021.~~		In order to evaluate the quality of the oxide layers that can be grown in the oxidation furnaces, some breakdown voltage measurement have been made.
	~~For E1 Oxidation (8") furnace~~, ~~it has~~ been ~~done in Febuary 2022~~.
	The results can be found on this page:		The results can be found on this page:

	*[[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements]]		*[[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements]]

Mmat at 12:28, 17 June 2025

2025-06-17T12:28:56Z

← Older revision		Revision as of 14:28, 17 June 2025
Line 22:		Line 22:
	The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:		The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:

	*[[Specific Process Knowledge/Thermal Process/A1 ~~Furnace Boron drive~~-in\|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]		*[[Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace\|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]
	*[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace\|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]]		*[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace\|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]]

Pevo: /* Comparison of the oxidation furnaces */

2024-03-22T13:04:39Z

Comparison of the oxidation furnaces

← Older revision		Revision as of 15:04, 22 March 2024
Line 68:		Line 68:
	!Generel description		!Generel description
	\|		\|
	*Dry and wet oxidation		*Dry and wet oxidation
	*Boron pre-deposition and boron drive-in are also done in the furnace		*Boron pre-deposition and boron drive-in are also done in the furnace
	\|		\|
Line 77:		Line 77:
	\|		\|
	*Dry and wet oxidation of 100 mm and 150 mm wafers		*Dry and wet oxidation of 100 mm and 150 mm wafers
	*Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.		*Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4
	\|		\|
	*Dry and wet oxidation and annealing of wafers from the wafer bonders and from PECVD4 and PECVD3		*Dry and wet oxidation and annealing of wafers from the wafer bonders and from PECVD4 and PECVD3

Pevo: /* Comparison of the oxidation furnaces */

2024-03-22T13:02:35Z

Comparison of the oxidation furnaces

← Older revision		Revision as of 15:02, 22 March 2024
Line 57:		Line 57:
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Al-Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Al-Anneal furnace (C4)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")\|Oxidation 8" (E1)]]		[[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")\|Oxidation 8" furnace (E1)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace\|Resist Pyrolysis furnace (research tool)]]		[[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace\|Resist Pyrolysis furnace (research tool)]]
Line 67:		Line 67:
	\|-style="background:WhiteSmoke; color:black"		\|-style="background:WhiteSmoke; color:black"
	!Generel description		!Generel description
	\|Dry and wet oxidation. Boron pre-deposition and boron drive-in ~~of boron~~ are also done in the furnace.		\|
	\|Dry oxidation of gate ~~oxide and other very clean~~ oxides.		*Dry and wet oxidation
	\|Dry and wet oxidation. Phosphorous drive-in is also done in the furnace.		*Boron pre-deposition and boron drive-in are also done in the furnace
	\|Dry and wet oxidation of 100 mm and 150 mm wafers~~. Oxidation of new wafers without RCA cleaning.~~ Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.		\|
	\|Dry and wet oxidation and annealing of wafers from ~~Wafer Bonder 02~~ and from PECVD4 and PECVD3.		*Dry oxidation of e.g. gate oxides layers
	\|Dry oxidation of 100 mm wafers and small samples		\|
	\|Dry and wet oxidation of 150 mm and 200 mm wafers		*Dry and wet oxidation
	\|Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists		*Phosphorous drive-in is also done in the furnace
	\|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) ~~and~~ RTH (hydrogenation).		\|
			*Dry and wet oxidation of 100 mm and 150 mm wafers
			*Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.
			\|
			*Dry and wet oxidation and annealing of wafers from the wafer bonders and from PECVD4 and PECVD3
			\|
			*Dry oxidation of 100 mm wafers and small samples
			\|
			*Dry and wet oxidation of 150 mm and 200 mm wafers
			\|
			*Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists
			\|
			*Rapid thermal processing:
			**RTA (annealing)
			**RTO (oxidation)
			**RTN (nitridation)
			**RTH (hydrogenation)
	\|-		\|-

Line 99:		Line 115:
	\|		\|
	*Dry: O<sub>2</sub>		*Dry: O<sub>2</sub>
	*Wet: H<sub>2</sub>O (~~bubbler~~)		*Wet: H<sub>2</sub>O (steamer)
	\|		\|
	*Dry: O<sub>2</sub>		*Dry: O<sub>2</sub>
Line 166:		Line 182:
	*1-30 100 mm wafers		*1-30 100 mm wafers
	\|		\|
	*Small samples on a carrier wafer, horizontal
	*1-30 50 mm wafers		*1-30 50 mm wafers
	*1-30 100 mm wafers		*1-30 100 mm wafers
	*1-30 150 mm wafers		*1-30 150 mm wafers
	\|		\|
	*Small samples on a carrier wafer, horizontal
	*1-30 50 mm wafers		*1-30 50 mm wafers
	*1-30 100 mm wafers		*1-30 100 mm wafers
			*Small samples on a carrier wafer, horizontal
	\|		\|
	*Small samples on a carrier wafer, horizontal
	*1-30 50 mm wafers		*1-30 50 mm wafers
	*1-30 100 mm wafers		*1-30 100 mm wafers
	*1-2 150 wafers, horizontal, less good uniformity		*1-2 150 mm wafers, horizontal, less good uniformity
			*Small samples on a carrier wafer, horizontal
	\|		\|
	*1-50 150 mm wafers		*1-50 150 mm wafers
	*1-25 200 mm wafers		*1-50 200 mm wafers
	\|		\|
	*1-30 50 mm, 100 mm or 150 mm wafers ~~per run~~		*1-30 50 mm wafers
	*~~Smaller~~ samples ~~(placed~~ on a Si carrier ~~wafer)~~		*1-30 100 mm wafers
			*1-30 150 mm wafers
			*Small samples on a carrier wafers, horizontal
	\|		\|
	*Single-wafer process		*Single-wafer process
Line 193:		Line 210:
	!'''Allowed materials'''		!'''Allowed materials'''
	\|		\|
	*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace.		*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace
	\|		\|
	*All wafers have to be RCA cleaned.		*All wafers have to be RCA cleaned
	\|		\|
	*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4.		*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4
	\|		\|
	*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.		*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4
	\|		\|
	*All processed wafers have to be RCA cleaned, except for wafers from ~~Wafer Bonder 02~~ and from PECVD4 and PECVD3		*All processed wafers and samples have to be RCA cleaned, except for wafers from the wafers bonders and from PECVD4 and PECVD3
	\|		\|
	*		*No RCA cleaning required
	\|		\|
	*		*All processed wafers have to be RCA cleaned.
	\|		\|
	*Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed		*Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed

Pevo: /* Oxidation */

2024-03-22T12:51:01Z

Oxidation

← Older revision		Revision as of 14:51, 22 March 2024
Line 4:		Line 4:

	==Oxidation==		==Oxidation==
	At DTU Nanolab we have ~~seven~~ furnaces and one RTP (rapid thermal processors) which can be used for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), ~~Phosphorous~~ Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C4), Oxidation 8" (E1), Resist Pyrolysis furnace and RTP Annealsys.		At DTU Nanolab we have eight furnaces and one RTP (rapid thermal processors) which can be used for thermal oxidation of silicon samples: Boron Drive-in and Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorus Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C4), Oxidation 8" furnace (E1), Resist Pyrolysis furnace and RTP Annealsys.

	Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is ~~slow~~ for dry oxidation.		Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slowest for dry oxidation.

			*Dry oxidation is used to grow 5 nm - 300 nm of silicon oxide. Dry oxidation can be done in the A1, A2, A3, C1, C3, C4, E1 and Resist Pyrolysis furnaces.
			*Wet oxidation is used to grow up to ~3 µm of silicon oxide. Wet oxidation can be done in the A1, A3, C1, C3 and E1 furnaces.

	*Dry oxidation is used to grow 5 nm - 300 nm of oxide in the furnaces: A1, A2, A3, C1, C3, C4, E1 and Resist Pyrolysis furnaces.		Wafers with oxide layers thicker than ~3 µm can normally not be made in the cleanroom and will have to be bought from somewhere else (but check the wafer shop first - there might be some on stock). It is NOT allowed to oxidize the same wafers two times to get a thicker layer than 3 µm without approval.
	*Wet oxidation is used to grow up to ~3 µm of oxide in the furnaces: A1, A3, C1, C3 and E1 furnaces.

	Wafers with oxide layers thicker than >3 µm can normally not be made in the cleanroom and will have to be bought from somewhere else (but check the wafer shop first - there might be some on stock). It is NOT allowed to oxidize the same wafers two ~~time~~ to get a thicker layer than 3 µm without approval.


	Thermal oxidation can done at temperatures up to 1050 C - 1150 C, depending on the furnace - and especially the diameter of the furnace tube. At these high temperatures, the quartz tube in the furnace might start to deform, so therefore the oxidation times are restricted:

			Thermal oxidation can done at temperatures up to 1050 C - 1150 C, depending on the furnace - and especially the diameter of the quartz tube in the furnace. At these high temperatures, the quartz tube might start to deform, so therefore the oxidation times are restricted:

	*A1, A2, A3, C3 and C4 furnaces: Maximum allowed oxidation time at 1150 C: 8 hours		*A1, A2, A3, C3 and C4 furnaces: Maximum allowed oxidation time at 1150 C: 8 hours
	*A1, A2, A3, C1, C3, ~~C3,~~ E1 furnaces: Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)		*A1, A2, A3, C1, C3, C4 and E1 furnaces: Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)
	*Resist Pyrolysis furnace: Maximum allowed oxidation time at 1050 C: 3 hours		*Resist Pyrolysis furnace: Maximum allowed oxidation time at 1050 C: 3 hours


	The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:		The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:


	*[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in\|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]		*[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in\|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]

Pevo: /* Comparison of the oxidation furnaces */

2024-03-22T11:08:20Z

Comparison of the oxidation furnaces

← Older revision		Revision as of 13:08, 22 March 2024
Line 60:		Line 60:
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Al-Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Al-Anneal furnace (C4)]]
	!		!
	[[Oxidation 8" (E1)]]		[[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")\|Oxidation 8" (E1)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace\|Resist Pyrolysis furnace (research tool)]]		[[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace\|Resist Pyrolysis furnace (research tool)]]

Pevo: /* Comparison of the oxidation furnaces */

2024-03-22T11:07:05Z

Comparison of the oxidation furnaces

← Older revision		Revision as of 13:07, 22 March 2024
Line 58:		Line 58:
	[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace\|Anneal Bond furnace (C3)]]		[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace\|Anneal Bond furnace (C3)]]
	!		!
	[[Al-Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Al-Anneal furnace (C4)]]
	!		!
	[[Oxidation 8" (E1)]]		[[Oxidation 8" (E1)]]

Pevo: /* Comparison of the oxidation furnaces */

2024-03-22T11:02:24Z

Comparison of the oxidation furnaces

← Older revision		Revision as of 13:02, 22 March 2024
Line 41:		Line 41:


	{\|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="9" style="text-align:left;"
	\|-		\|-

Line 48:		Line 48:
	\|		\|
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace\|Boron Drive-in + Pre-dep furnace (A1)]]		[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace\|Boron Drive-in and Pre-dep furnace (A1)]]
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace\|Gate Oxide furnace (A2)]]		[[Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace\|Gate Oxide furnace (A2)]]
Line 102:		Line 102:
	\|		\|
	*Dry: O<sub>2</sub>		*Dry: O<sub>2</sub>
	*Wet: H O<sub>2</sub>O (bubbler)		*Wet: H<sub>2</sub>O (bubbler)
	\|		\|
	*Dry: O<sub>2</sub>		*Dry: O<sub>2</sub>
Line 178:		Line 178:
	*1-30 100 mm wafers		*1-30 100 mm wafers
	\|		\|
	*		*Small samples on a carrier wafer, horizontal
			*1-30 50 mm wafers
			*1-30 100 mm wafers
			*1-2 150 wafers, horizontal, less good uniformity
	\|		\|
	*		*1-50 150 mm wafers
			*1-25 200 mm wafers
	\|		\|
	*1-30 50 mm, 100 mm or 150 mm wafers per run		*1-30 50 mm, 100 mm or 150 mm wafers per run
Line 188:		Line 192:
	*Chips on carrier		*Chips on carrier
	*100 mm or 150 mm wafers		*100 mm or 150 mm wafers
	\|-

	\|-		\|-
	\|-style="background:LightGrey; color:black"		\|-style="background:LightGrey; color:black"