Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8") - Revision history

Pevo: /* Overview of the performance of Oxidation (8") furnace and some process related parameters */

2025-09-16T12:53:33Z

Overview of the performance of Oxidation (8") furnace and some process related parameters

← Older revision		Revision as of 14:53, 16 September 2025
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	*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>		*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>
	*Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system.		*Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system.
	* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/E1 furnace break-down voltage measurement results\|Break-down voltage measurement results]]
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	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
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	*Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)		*Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
	*Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C)		*Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C)
			* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/E1 furnace break-down voltage measurement results\|Break-down voltage measurement results]]
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Pevo: /* Overview of the performance of Oxidation (8") furnace and some process related parameters */

2025-09-16T12:51:52Z

Overview of the performance of Oxidation (8") furnace and some process related parameters

← Older revision		Revision as of 14:51, 16 September 2025
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	*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>		*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>
	*Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system.		*Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system.
			* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/E1 furnace break-down voltage measurement results\|Break-down voltage measurement results]]
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance

Pevo: /* Overview of the performance of Oxidation (8") furnace and some process related parameters */

2025-09-16T12:51:19Z

Overview of the performance of Oxidation (8") furnace and some process related parameters

← Older revision		Revision as of 14:51, 16 September 2025
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	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness and quality
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)		*Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)

Pevo: /* Overview of the performance of Oxidation (8") furnace and some process related parameters */

2025-08-04T08:58:00Z

Overview of the performance of Oxidation (8") furnace and some process related parameters

← Older revision		Revision as of 10:58, 4 August 2025
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	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*(1 - 50 ~~100 mm~~ wafers)		*(100 mm wafers - 1-50 wafers)
	*1 - 50 ~~150 mm~~ wafers		*150 mm wafers - 1-50 wafers
	*1 - 25 ~~200 mm~~ wafers		*200 mm wafers - 1-25 wafers
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed

Pevo: /* Overview of the performance of Oxidation (8") furnace and some process related parameters */

2025-08-04T08:56:26Z

Overview of the performance of Oxidation (8") furnace and some process related parameters

← Older revision		Revision as of 10:56, 4 August 2025
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	*N<sub>2</sub>: 0 - 30 slm		*N<sub>2</sub>: 0 - 30 slm
	*O<sub>2</sub>: 0 - 30 slm		*O<sub>2</sub>: 0 - 30 slm
	*Steamer flow : 0 - 12.5 slm (9.5 slm in standard recipes)		*Steamer flow: 0 - 12.5 slm (9.5 slm in standard recipes)
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	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates

Pevo: /* Overview of the performance of Oxidation (8") furnace and some process related parameters */

2025-08-04T08:56:00Z

Overview of the performance of Oxidation (8") furnace and some process related parameters

← Older revision		Revision as of 10:56, 4 August 2025
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	Oxidation:		Oxidation:
	*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>		*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>
	*Wet oxidation using steam~~/H<sub>2</sub>O~~. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system.		*Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system.
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance

Pevo at 08:54, 4 August 2025

2025-08-04T08:54:55Z

← Older revision		Revision as of 10:54, 4 August 2025
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	The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.		The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.

	Both 150 mm and 200 mm wafers can be processed in the furnace. 100 mm wafers can also be processed in the furnace, but they should normally go in one of the other furnaces in the cleanroom instead. To switch between different wafer sizes, the furnace responsible persons will have to ~~switch~~ the quartz boats in the furnace.		Both 150 mm and 200 mm wafers can be processed in the furnace. 100 mm wafers can also be processed in the furnace, but they should normally go in one of the other furnaces in the cleanroom instead. To switch between different wafer sizes, the furnace responsible persons will have to change the quartz boats in the furnace.

	The Oxidation (8") furnace is the top furnace tube in the furnace E-stack, which positioned in cleanroom E-6. New silicon wafers bought from DTU Nanolab can go directly into the furnace. Wafers from the A-stack furnaces, the C1 furnace, the LPCVD furnaces (B- and other E-stack furnaces) and from PECVD4 (not III-V materials) can also go directly into the furnace. All processed wafers have to be RCA cleaned, before they enter the furnace. Please check the cross contamination information in LabManager, before you use the furnace.		The Oxidation (8") furnace is the top furnace tube in the furnace E-stack, which in positioned in cleanroom E-6. New silicon wafers bought from DTU Nanolab can go directly into the furnace. Wafers from the A-stack furnaces, the C1 furnace, the LPCVD furnaces (B- and other E-stack furnaces) and from PECVD4 (not III-V materials) can also go directly into the furnace. All processed wafers have to be RCA cleaned, before they enter the furnace. Please check the cross contamination information in LabManager, before you use the furnace.

	Oxygen is ~~using~~ as oxidant for dry oxidation, and for wet oxidation ~~wafer~~ vapour generated by a Bronkhorst steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.		Oxygen is used as oxidant for dry oxidation, and for wet oxidation water vapour generated by a Bronkhorst steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

	Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).		Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).

Pevo at 08:52, 4 August 2025

2025-08-04T08:52:45Z

← Older revision		Revision as of 10:52, 4 August 2025
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	==Oxidation (8") furnace (E1)==		==Oxidation (8") furnace (E1)==
	[[Image:E1_furnace.JPG\|thumb\|300x300px\|Oxidation (8") furnace (E1). Positioned in cleanroom E-6.''Photo: DTU Nanolab internal'']]		[[Image:E1_furnace.JPG\|thumb\|300x300px\|Oxidation (8") furnace (E1). Positioned in cleanroom E-6. ''Photo: DTU Nanolab internal'']]

	The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.		The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.

Pevo: /* Overview of the performance of Oxidation (8") furnace and some process related parameters */

2025-08-04T08:48:15Z

Overview of the performance of Oxidation (8") furnace and some process related parameters

← Older revision		Revision as of 10:48, 4 August 2025
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	!style="background:silver; color:black;" align="center"\|Purpose		!style="background:silver; color:black;" align="center"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	*Oxidation of 150 mm and 200 mm wafers		*Oxidation of (100 mm), 150 mm and 200 mm wafers
	*Annealing of 150 mm and 200 mm wafers		*Annealing of (100 mm), 150 mm and 200 mm wafers
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	Annealing:		Annealing:
	*Using N<sub>2</sub>		*Using N<sub>2</sub>
	Oxidation:		Oxidation:
	*Dry oxidation using O<sub>2</sub>		*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>
	*Wet oxidation using ~~DI water~~ steam injection system ~~(Bronkhorst)~~		*Wet oxidation using steam/H<sub>2</sub>O. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system.
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry ~~SiO<sub>2</sub>~~: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)		*Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
	*Wet ~~SiO<sub>2</sub>~~: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)		*Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
	\|style="background:LightGrey; color:black"\|Process Temperature		\|style="background:LightGrey; color:black"\|Process Temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*800 - 1100 <sup>o</sup>C		*800 <sup>o</sup>C - 1100 <sup>o</sup>C
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
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	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
			*(1 - 50 100 mm wafers)
	*1 - 50 150 mm wafers		*1 - 50 150 mm wafers
	*1 - 50 200 mm wafers		*1 - 25 200 mm wafers
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed

Pevo: /* Oxidation (8") furnace (E1) */

2025-08-04T08:21:30Z

Oxidation (8") furnace (E1)

← Older revision		Revision as of 10:21, 4 August 2025
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	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''

	[[Category: Equipment \|Thermal C1]]		[[index.php?title=Category:Equipment\|Thermal C1]]
	[[Category: Thermal process\|C1]]		[[index.php?title=Category:Thermal process\|C1]]
	[[Category: Furnaces\|C1]]		[[index.php?title=Category:Furnaces\|C1]]


	==Oxidation (8") furnace (E1)==		==Oxidation (8") furnace (E1)==
	[[Image:E1_furnace.JPG\|thumb\|300x300px\|Oxidation (8") furnace (E1). Positioned in cleanroom E-6/ Photo: DTU Nanolab internal]]		[[Image:E1_furnace.JPG\|thumb\|300x300px\|Oxidation (8") furnace (E1). Positioned in cleanroom E-6.''Photo: DTU Nanolab internal'']]

	The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers~~. Both 150 mm and 200 mm wafers can be processed in the furnace~~.		The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.

	~~The Oxidation (8") furnace is~~ the ~~top~~ furnace ~~tube~~ in the furnace ~~E-stack~~, ~~which positioned~~ in ~~cleanroom E-6. Most~~ of ~~wafers have to be RCA cleaned, before they enter~~ the ~~furnace~~. ~~The only exceptions are brand new wafers~~, ~~wafers from~~ the ~~A-stack furnaces, wafers from C1~~ furnace~~, wafers from the LPCVD furnaces (B- and other E-stack furnaces) and wafers from PECVD4 (not III-V materials). Please check~~ the ~~cross contamination information~~ in ~~LabManager, before you use~~ the furnace.		Both 150 mm and 200 mm wafers can be processed in the furnace. 100 mm wafers can also be processed in the furnace, but they should normally go in one of the other furnaces in the cleanroom instead. To switch between different wafer sizes, the furnace responsible persons will have to switch the quartz boats in the furnace.

	Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.		The Oxidation (8") furnace is the top furnace tube in the furnace E-stack, which positioned in cleanroom E-6. New silicon wafers bought from DTU Nanolab can go directly into the furnace. Wafers from the A-stack furnaces, the C1 furnace, the LPCVD furnaces (B- and other E-stack furnaces) and from PECVD4 (not III-V materials) can also go directly into the furnace. All processed wafers have to be RCA cleaned, before they enter the furnace. Please check the cross contamination information in LabManager, before you use the furnace.

			Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a Bronkhorst steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

	Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).		Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).