Specific Process Knowledge/Thermal Process/Dope with Boron - Revision history

Mmat at 14:21, 3 June 2025

2025-06-03T14:21:20Z

← Older revision		Revision as of 16:21, 3 June 2025
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	{cc-nanolab}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''

Mmat at 14:21, 3 June 2025

2025-06-03T14:21:08Z

← Older revision		Revision as of 16:21, 3 June 2025
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			{cc-nanolab}}
	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''

Mmat: /* Doping with boron */

2025-06-03T14:20:53Z

Doping with boron

← Older revision		Revision as of 16:20, 3 June 2025
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	==Doping with ~~boron=~~=		=Doping with Boron=

	~~''This section is written by DTU Nanolab internal''~~

	The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit/dope silicon wafers with boron.		The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit/dope silicon wafers with boron.

Paphol: /* Doping with boron */

2023-01-31T13:58:26Z

Doping with boron

← Older revision		Revision as of 15:58, 31 January 2023
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	==Doping with boron==		==Doping with boron==

			''This section is written by DTU Nanolab internal''

	The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit/dope silicon wafers with boron.		The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit/dope silicon wafers with boron.

Pevo: /* Doping with boron */

2022-08-26T10:07:52Z

Doping with boron

← Older revision		Revision as of 12:07, 26 August 2022
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	==Doping with boron==		==Doping with boron==

	The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit silicon wafers with boron.		The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit/dope silicon wafers with boron.

	The boron doping is done by use of boron nitride source wafers, that allows boron to diffuse into the silicon wafers. The source wafers have to be RCA1 cleaned and activated, i.e. heated up to at least 1050 <sup>o</sup>C, before the boron pre-deposition is done. The procedure for this can be found in the user manual.		The boron doping is done by use of boron nitride source wafers, that allows boron to diffuse into the silicon wafers. The source wafers have to be RCA1 cleaned and activated, i.e. heated up to at least 1050 <sup>o</sup>C, before the boron pre-deposition is done. The procedure for this can be found in the user manual for the A1 furnace.

	In the furnace, the silicon wafers are positioned in a silicon carbide boat just next to the boron nitride source wafers. The side of the silicon wafers that needs to be doped, has to point towards the source wafers.		In the furnace, the silicon wafers are positioned in a silicon carbide boat just next to the boron nitride source wafers. The side of the silicon wafers that needs to be doped, has to point towards the source wafers.

	The concentration of boron in the ~~wafer~~ after the pre-deposition depends on the process temperature, and the doping depth profile depends of the process time.		The concentration of boron in the wafers after the pre-deposition depends on the process temperature, and the doping depth profile depends of the process time.

	All the graphs shown on this page have been made in 2003. A this time ~~where there was~~ a furnace dedicated only for ~~Boron Pre~~-~~dep~~ (the A2 furnace, which is now a Gate Oxide furnace). The pre-deposition processes were done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.		All the graphs shown on this page have been made in 2003. A this time DTU Nanolab had a furnace dedicated only for boron pre-deposition (the A2 furnace, which is now a Gate Oxide furnace). The pre-deposition processes were done at a temperature of 1125 <sup>o</sup>C and with a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.

	<gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">		<gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">

Pevo: /* Doping with boron */

2022-08-26T10:04:42Z

Doping with boron

← Older revision		Revision as of 12:04, 26 August 2022
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	The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit silicon wafers with boron.		The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit silicon wafers with boron.

	The boron doping is done by use of boron ~~silicate~~ source wafers, that allows boron to diffuse into the silicon wafers. ~~These~~ have to be RCA1 cleaned activated, i.e. heated up to at least 1050 <~~sub~~>C<~~\sub~~>, before the boron pre-deposition is done.		The boron doping is done by use of boron nitride source wafers, that allows boron to diffuse into the silicon wafers. The source wafers have to be RCA1 cleaned and activated, i.e. heated up to at least 1050 <sup>o</sup>C, before the boron pre-deposition is done. The procedure for this can be found in the user manual.

	In the furnace, the silicon wafers are positioned in a silicon carbide boat just next to the boron nitride source wafers. The side of the silicon wafers that ~~should~~ be doped, has to point towards the source wafers.		In the furnace, the silicon wafers are positioned in a silicon carbide boat just next to the boron nitride source wafers. The side of the silicon wafers that needs to be doped, has to point towards the source wafers.

	The concentration of boron in the wafer depends on the process temperature, and the doping depth profile depends of the process time.		The concentration of boron in the wafer after the pre-deposition depends on the process temperature, and the doping depth profile depends of the process time.

	All this ~~figures~~ have been made ~~at the~~ time where there was a furnace only for Boron Pre-dep (furnace A2). The ~~process was~~ done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.		All the graphs shown on this page have been made in 2003. A this time where there was a furnace dedicated only for Boron Pre-dep (the A2 furnace, which is now a Gate Oxide furnace). The pre-deposition processes were done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.

	<gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">		<gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">

Pevo: /* Dope with boron */

2022-08-08T12:45:43Z

Dope with boron

← Older revision		Revision as of 14:45, 8 August 2022
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	==~~Dope~~ with boron==		==Doping with boron==
	The furnace A1 Boron Drive-in and Pre-dep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.

	The concentration of boron in the wafer depends on the process temperature.		The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit silicon wafers with boron.
	~~The~~ depth profile depends of the process time.
			The boron doping is done by use of boron silicate source wafers, that allows boron to diffuse into the silicon wafers. These have to be RCA1 cleaned activated, i.e. heated up to at least 1050 <sub>C<\sub>, before the boron pre-deposition is done.

			In the furnace, the silicon wafers are positioned in a silicon carbide boat just next to the boron nitride source wafers. The side of the silicon wafers that should be doped, has to point towards the source wafers.

			The concentration of boron in the wafer depends on the process temperature, and the doping depth profile depends of the process time.

	All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.		All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.

Jmli at 15:03, 25 November 2019

2019-11-25T15:03:18Z

← Older revision		Revision as of 17:03, 25 November 2019
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	'''Feedback to this page''': '''[mailto:labadviser@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''


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	'''		'''

	To study the uniformity across a wafer that has been boron doped using a pre-deposition process and a short wet oxidation to ~~oxidixe~~ the boron phase layer in the Boron Predep and Drive-in furnace (A1) at DTU ~~Danchip~~.		To study the uniformity across a wafer that has been boron doped using a pre-deposition process and a short wet oxidation to oxidize the boron phase layer in the Boron Predep and Drive-in furnace (A1) at DTU Nanolab.

	'''		'''

Pevo: /* Dope with boron */

2018-01-29T13:53:20Z

Dope with boron

← Older revision		Revision as of 15:53, 29 January 2018
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	All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.		All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.

	<gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">		<gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">
	image:borprofil_1tim.jpg\|Pre-depostion for 1 hour at 1125 °C		image:borprofil_1tim.jpg\|Pre-depostion for 1 hour at 1125 °C
	image:borprofil_6tim.jpg\|Pre-depostion for 6 hour at 1125 °C		image:borprofil_6tim.jpg\|Pre-depostion for 6 hour at 1125 °C
	image:borprofil_16tim.jpg\|Pre-depostion for 16 hour at 1125 °C		image:borprofil_16tim.jpg\|Pre-depostion for 16 hour at 1125 °C

	</gallery>		</gallery>
	<gallery caption="Boron diffusion depth vs. pre-deposition time" widths="400px" heights="300px" perrow="3">		<gallery caption="Boron diffusion depth vs. pre-deposition time" widths="400px" heights="300px" perrow="3">
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	'''		'''

	==Boron pre-deposition==		==Boron pre-deposition==

Pevo at 13:53, 29 January 2018

2018-01-29T13:53:00Z

← Older revision		Revision as of 15:53, 29 January 2018
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	'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''		'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''


	==Dope with boron==		==Dope with boron==