Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace - Revision history

Pevo: /* Overview of the performance of the Aluminium Anneal furnace and some process related parameters */

2025-08-13T08:09:34Z

Overview of the performance of the Aluminium Anneal furnace and some process related parameters

← Older revision		Revision as of 10:09, 13 August 2025
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	[[Category: Equipment \|Thermal C4]]		[[index.php?title=Category:Equipment\|Thermal C4]]
	[[Category: Thermal process\|C4]]		[[index.php?title=Category:Thermal process\|C4]]
	[[Category: Furnaces\|C4]]		[[index.php?title=Category:Furnaces\|C4]]

	=Aluminium Anneal furnace (C4)=		=Aluminium Anneal furnace (C4)=
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	*N<sub>2</sub> (nitrogen): 0-10 SLM		*N<sub>2</sub> (nitrogen): 0-10 SLM
	*O<sub>2</sub> (oxygen): 0-10 SLM		*O<sub>2</sub> (oxygen): 0-10 SLM
	*Forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub>): 0-5 SLM - ~~Being tested~~		*Forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub>): 0-5 SLM - Max 1 hour
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates

Mmat at 14:07, 6 March 2025

2025-03-06T14:07:03Z

← Older revision		Revision as of 16:07, 6 March 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C4_Aluminium_Anneal_furnace click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C4_Aluminium_Anneal_furnace click here]'''

	~~''This page is written by DTU Nanolab internal''~~
	[[Category: Equipment \|Thermal C4]]		[[Category: Equipment \|Thermal C4]]
	[[Category: Thermal process\|C4]]		[[Category: Thermal process\|C4]]
	[[Category: Furnaces\|C4]]		[[Category: Furnaces\|C4]]

	==Aluminium Anneal furnace (C4)==		=Aluminium Anneal furnace (C4)=
	[[Image:C4helstak.jpg \|thumb\|300x300px\|Aluminium Anneal furnace (C4). Positioned in cleanroom B-1. /Photo: DTU Nanolab internal]]		[[Image:C4helstak.jpg \|thumb\|300x300px\|Aluminium Anneal furnace (C4). Positioned in cleanroom B-1. /Photo: DTU Nanolab internal]]

Pevo: /* Overview of the performance of the Aluminium Anneal furnace and some process related parameters */

2024-12-16T10:13:08Z

Overview of the performance of the Aluminium Anneal furnace and some process related parameters

← Older revision		Revision as of 12:13, 16 December 2024
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Annealing in N<sub>2</sub>		*Annealing in N<sub>2</sub>
			*Annealing in forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub> - Being tested)
	*Dry oxidation with O<sub>2</sub>		*Dry oxidation with O<sub>2</sub>
	\|-		\|-
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	*N<sub>2</sub> (nitrogen): 0-10 SLM		*N<sub>2</sub> (nitrogen): 0-10 SLM
	*O<sub>2</sub> (oxygen): 0-10 SLM		*O<sub>2</sub> (oxygen): 0-10 SLM
			*Forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub>): 0-5 SLM - Being tested
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
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	*1-30 4" wafers (or 2" wafers)		*1-30 4" wafers (or 2" wafers)
	*1 6" wafer (2 6" wafers with less good uniformity) - Requires training		*1 6" wafer (2 6" wafers with less good uniformity) - Requires training
	*Small samples placed on a 6" dummy wafer - Requires ~~traning~~		*Small samples placed on a 6" dummy wafer - Requires training
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed
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	\|-		\|-
	\|}		\|}


	==Oxidation uniformity for 6" wafers==		==Oxidation uniformity for 6" wafers==

Pevo: /* Oxidation uniformity for 6" wafers */

2023-12-15T13:54:31Z

Oxidation uniformity for 6" wafers

← Older revision		Revision as of 15:54, 15 December 2023
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	In November 2023 an oxygen (O<sub>2</sub>) mass flow controller was connected to the furnace, so that it became possible to oxidize different wafers and samples in the furnace.		In November 2023 an oxygen (O<sub>2</sub>) mass flow controller was connected to the furnace, so that it became possible to oxidize different wafers and samples in the furnace.

	The C4 furnace is made for processing of 4" wafers placed vertically in a quartz boat. However, it is possible to process 6" wafers (or small ~~sample~~ placed on a 6" wafer), if they are placed horizontally on the boat.		The C4 furnace is made for processing of 4" wafers placed vertically in a quartz boat. However, it is possible to process 6" wafers (or small samples placed on a 6" wafer), if they are placed horizontally on the boat.

	Normally only one 6" wafer is be processed, because the temperature flat zone, i.e. the area where the temperature is uniform, it only a little longer than one quartz boat. ~~The teh~~		Normally only one 6" wafer is being processed, because the temperature flat zone, i.e. the area inside the furnace where the temperature is uniform, is only a little longer than one quartz boat. But because there are two quartz boats available for the furnace, it has also been tried to place a 6" wafer on each boat and oxidize them at the same time as explained here.


			<b>Sample loading:</b>

	It was ~~tried to oxidize~~ two 6" wafers ~~at the same time~~ in the ~~furnace~~.		One 6" wafer was placed on each of the two quartz boats. The wafer flats were pointing towards each other, and the boats were centered above the arrow on the cantilever. The loading procedure is explained in the user manual for the furnace, but users should not do this without training, as the wafers might collide with the furnace tube, when the door closes (the tube diameter is 160 mm, and the wafer diameter is 150 mm). In order improve the temperature uniformity over the two 6" wafers, two 4" dummy wafers were placed in the end of each boat.

			The 6" wafer closest to the furnace door/cleanroom is numbered "w1", and the wafer closest to the furnace/service room is numbered "w2". See the image below.


	<b>Process parameters:</b>		<b>Process parameters:</b>

			For the oxidation, the following process parameters were used:

	* Recipe: "DRY1050"		* Recipe: "DRY1050"
	* Oxidation temperature: 1050 <sup>o</sup>C		* Oxidation temperature: 1050 <sup>o</sup>C
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	[[image:Oxidation test 1.jpg\|600x600px\|left\|thumb\|Two 6" ~~wafer~~ loaded in the C4 furnace. Two 4" dummy wafers are placed in the end of each boat. ]]		<b>Results:</b>

			After the oxidation, the thickness of the oxide layer grown on the 6" wafers was measured in five points on each wafer using the Ellipsometer VASE.

			The measurement results are shown below.

			<i>Pernille Voss Larsen, DTU Nanolab, November 2023</i>

			[[image:Oxidation test 1.jpg\|600x600px\|left\|thumb\|Two 6" wafers loaded in the C4 furnace. Two 4" dummy wafers are placed in the end of each boat.]]

	[[image:Oxidation test 2.jpg \|700x700px\|left\|thumb\|Oxide thickness measured on the two 6" wafers]]		[[image:Oxidation test 2.jpg \|700x700px\|left\|thumb\|Oxide thickness measured on the two 6" wafers]]

Pevo: /* Oxidation uniformity */

2023-12-15T12:22:00Z

Oxidation uniformity

← Older revision		Revision as of 14:22, 15 December 2023
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	\|}		\|}

	==Oxidation uniformity==
			==Oxidation uniformity for 6" wafers==

			In November 2023 an oxygen (O<sub>2</sub>) mass flow controller was connected to the furnace, so that it became possible to oxidize different wafers and samples in the furnace.

			The C4 furnace is made for processing of 4" wafers placed vertically in a quartz boat. However, it is possible to process 6" wafers (or small sample placed on a 6" wafer), if they are placed horizontally on the boat.

			Normally only one 6" wafer is be processed, because the temperature flat zone, i.e. the area where the temperature is uniform, it only a little longer than one quartz boat. The teh



			It was tried to oxidize two 6" wafers at the same time in the furnace.



			<b>Process parameters:</b>
			* Recipe: "DRY1050"
			* Oxidation temperature: 1050 <sup>o</sup>C
			* Oxidation time: 1 h 40 min


			[[image:Oxidation test 1.jpg\|600x600px\|left\|thumb\|Two 6" wafer loaded in the C4 furnace. Two 4" dummy wafers are placed in the end of each boat. ]]

			[[image:Oxidation test 2.jpg \|700x700px\|left\|thumb\|Oxide thickness measured on the two 6" wafers]]

Pevo at 11:01, 15 December 2023

2023-12-15T11:01:49Z

← Older revision		Revision as of 13:01, 15 December 2023
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	\|-		\|-
	\|}		\|}

			==Oxidation uniformity==

Pevo: /* Process knowledge */

2023-11-21T13:54:35Z

Process knowledge

← Older revision		Revision as of 15:54, 21 November 2023
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	==Process knowledge==		==Process knowledge==
	*Annealing: ~~look~~ at the [[Specific Process Knowledge/Thermal Process/Annealing\|Annealing]] page		*Annealing: Look at the [[Specific Process Knowledge/Thermal Process/Annealing\|Annealing]] page
			*Oxidation: Look at the [[Specific Process Knowledge/Thermal Process/Oxidation\|Oxidation]] page

	==Overview of the performance of the Aluminium Anneal furnace and some process related parameters==		==Overview of the performance of the Aluminium Anneal furnace and some process related parameters==

Pevo: /* Overview of the performance of the Aluminium Anneal furnace and some process related parameters */

2023-11-21T13:53:30Z

Overview of the performance of the Aluminium Anneal furnace and some process related parameters

← Older revision		Revision as of 15:53, 21 November 2023
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	\|style="background:LightGrey; color:black"\|Gas flows		\|style="background:LightGrey; color:black"\|Gas flows
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*N<sub>2</sub> (nitrogen): 0-10 ~~slm~~		*N<sub>2</sub> (nitrogen): 0-10 SLM
	*O<sub>2</sub> (oxygen): 0-10 ~~slm~~		*O<sub>2</sub> (oxygen): 0-10 SLM
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
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	*1-30 4" wafers (or 2" wafers)		*1-30 4" wafers (or 2" wafers)
	*1 6" wafer (2 6" wafers with less good uniformity) - Requires training		*1 6" wafer (2 6" wafers with less good uniformity) - Requires training
	*Small samples placed on a 6" dummy wafer - ~~Required~~ traning		*Small samples placed on a 6" dummy wafer - Requires traning
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed
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	*Silicon and quartz samples with		*Silicon and quartz samples with
	**SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>		**SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>
	**Aluminium		**Aluminium. Wafers are allowed to enter the furnace after aluminium lift-off or aluminium etch and resist strip in acetone
	**Al<sub>2</sub>O<sub>3</sub> deposited by ALD		**Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
	*Other materials might be allowed ~~in the furnace~~, but it requires a permission from the Thin Film group		*Other materials might be allowed, but it requires a permission from the Thin Film group
			\|-
	~~wafers with aluminium.~~
	*Silicon wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
	*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
	\|-
	\|}		\|}

Pevo: /* Overview of the performance of the Aluminium Anneal furnace and some process related parameters */

2023-11-21T13:48:36Z

Overview of the performance of the Aluminium Anneal furnace and some process related parameters

← Older revision		Revision as of 15:48, 21 November 2023
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	**Aluminium		**Aluminium
	**Al<sub>2</sub>O<sub>3</sub> deposited by ALD		**Al<sub>2</sub>O<sub>3</sub> deposited by ALD
	*Other materials might be allowed in the furnace, but		*Other materials might be allowed in the furnace, but it requires a permission from the Thin Film group

	wafers with aluminium.		wafers with aluminium.

Pevo: /* Overview of the performance of the Aluminium Anneal furnace and some process related parameters */

2023-11-21T13:48:06Z

Overview of the performance of the Aluminium Anneal furnace and some process related parameters

← Older revision		Revision as of 15:48, 21 November 2023
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	\|style="background:LightGrey; color:black"\|Process Temperature		\|style="background:LightGrey; color:black"\|Process Temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Normally 350-500 <sup>o</sup>C for wafers and samples		*Normally 350-500 <sup>o</sup>C for wafers and samples with aluminium
	*Up to 1150 <sup>o</sup>C for wafers and samples with other materials		*Up to 1150 <sup>o</sup>C for wafers and samples with other materials
	\|-		\|-
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	\|style="background:LightGrey; color:black"\|Gas flows		\|style="background:LightGrey; color:black"\|Gas flows
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*N<sub>2</sub>: 0-10 slm		*N<sub>2</sub> (nitrogen): 0-10 slm
	*O<sub>2</sub>: 0-10 slm		*O<sub>2</sub> (oxygen): 0-10 slm
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
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	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Silicon wafers with aluminium.		*Silicon and quartz samples with
			**SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>
			**Aluminium
			**Al<sub>2</sub>O<sub>3</sub> deposited by ALD
			*Other materials might be allowed in the furnace, but

			wafers with aluminium.
	*Silicon wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD		*Silicon wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
	*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone		*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
	\|-		\|-
	\|}		\|}