Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace - Revision history

Pevo: /* Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters */

2025-10-22T12:28:37Z

Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters

← Older revision		Revision as of 14:28, 22 October 2025
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	[[Category: Equipment \|Thermal C3]]		[[index.php?title=Category:Equipment\|Thermal C3]]
	[[Category: Thermal process\|C3]]		[[index.php?title=Category:Thermal process\|C3]]
	[[Category: Furnaces\|C3]]		[[index.php?title=Category:Furnaces\|C3]]

	==Anneal-bond furnace (C3)==		==Anneal-bond furnace (C3)==
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	*Wafers and samples from PECVD4		*Wafers and samples from PECVD4
	*Wafers and samples from PECVD3 (without any metals)		*Wafers and samples from PECVD3 (without any metals)
	*Wafers from Wafer Bonder 03		*Wafers from Wafer Bonder 02
	*Wafers from Wafer Bonder 02 (without any metals). Use new or dedicated teflon sheets in the wafer bonder		*Wafers from Wafer Bonder 03 (without any metals). Use new or dedicated/clean teflon sheets in the wafer bonder
	\|-		\|-
	\|}		\|}

Pevo: /* Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters */

2025-10-22T09:58:40Z

Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters

← Older revision		Revision as of 11:58, 22 October 2025
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	*Silicon wafers		*Silicon wafers
	*Silicon wafers with layers of silicon oxide or silicon nitride		*Silicon wafers with layers of silicon oxide or silicon nitride
	*Wafers from the ~~LPCVD~~ furnaces		*Wafers from the A1, A3, B-stack, C1 and E1 stack furnaces
	*Wafers from PECVD4		*Wafers and samples from PECVD4
	*Wafers from PECVD3 (without any ~~metal~~)		*Wafers and samples from PECVD3 (without any metals)
	*Wafers from Wafer Bonder 02 (~~assuming they were clean and not have been exposed to~~ any ~~metal when entering~~ the ~~Wafer Bonder 02)~~		*Wafers from Wafer Bonder 03
			*Wafers from Wafer Bonder 02 (without any metals). Use new or dedicated teflon sheets in the wafer bonder
	\|-		\|-
	\|}		\|}

Pevo: /* Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters */

2025-09-16T12:50:53Z

Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters

← Older revision		Revision as of 14:50, 16 September 2025
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	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness and quality
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)		*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
	*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)		*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
			* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/C3 furnace break-down voltage measurement results\|Break-down voltage measurement results]]
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Mmat at 14:02, 6 March 2025

2025-03-06T14:02:04Z

← Older revision		Revision as of 16:02, 6 March 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace click here]'''

	~~''This page is written by DTU Nanolab internal''~~
	[[Category: Equipment \|Thermal C3]]		[[Category: Equipment \|Thermal C3]]
	[[Category: Thermal process\|C3]]		[[Category: Thermal process\|C3]]

Paphol at 13:22, 31 January 2023

2023-01-31T13:22:34Z

← Older revision		Revision as of 15:22, 31 January 2023
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	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace click here]'''

			''This page is written by DTU Nanolab internal''
	[[Category: Equipment \|Thermal C3]]		[[Category: Equipment \|Thermal C3]]
	[[Category: Thermal process\|C3]]		[[Category: Thermal process\|C3]]
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	==Anneal-bond furnace (C3)==		==Anneal-bond furnace (C3)==
	[[Image:C3.JPG\|thumb\|300x300px\|Anneal-bond furnace (C3). Positioned in cleanroom B-1]]		[[Image:C3.JPG\|thumb\|300x300px\|Anneal-bond furnace (C3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]

	The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.		The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.

Pevo: /* Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters */

2020-02-03T13:45:24Z

Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters

← Older revision		Revision as of 15:45, 3 February 2020
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	Oxidation:		Oxidation:
	*Dry oxidation using O<sub>2</sub>		*Dry oxidation using O<sub>2</sub>
	*Wet oxidation using H<sub>2</sub>O generated by a bubbler		*Wet oxidation using H<sub>2</sub>O vapour generated by a bubbler
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance

Pevo: /* Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters */

2020-01-30T14:55:23Z

Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters

← Older revision		Revision as of 16:55, 30 January 2020
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)		*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
	*Wet oxide: ~ 0 nm to 3 µm (23 hours oxidation at 1100 <sup>o</sup>C)		*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Pevo: /* Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters */

2020-01-30T14:53:56Z

Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters

← Older revision		Revision as of 16:53, 30 January 2020
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	\|style="background:LightGrey; color:black"\|Substrate materials allowed		\|style="background:LightGrey; color:black"\|Substrate materials allowed
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Silicon wafers ~~(new wafers or RCA cleaned wafers)~~		*Silicon wafers
	*Silicon wafers with layers of silicon oxide or silicon ~~(oxy)~~nitride ~~(RCA cleaned)~~		*Silicon wafers with layers of silicon oxide or silicon nitride
	*Wafers from the LPCVD furnaces		*Wafers from the LPCVD furnaces
	*Wafers from PECVD4		*Wafers from PECVD4

Pevo at 14:52, 30 January 2020

2020-01-30T14:52:40Z

← Older revision		Revision as of 16:52, 30 January 2020
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	'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=89 Anneal-bond Furnace (C3)]'''		'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=89 Anneal-bond Furnace (C3)]'''


	==Process knowledge==		==Process knowledge==
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	*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing\|Annealing]] page		*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing\|Annealing]] page

	==Overview of the performance of Anneal Bond furnace and some process related parameters==
			==Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters==

	{\| border="2" cellspacing="0" cellpadding="2"		{\| border="2" cellspacing="0" cellpadding="2"
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	*Oxidation of Si wafers		*Oxidation of Si wafers
	*Annealing of processed wafers, eg. bonded wafers from EVG NIL		*Annealing of processed wafers, eg. bonded wafers from EVG NIL
	\|style="background:WhiteSmoke; color:black"\|Oxidation:		\|style="background:WhiteSmoke; color:black"\|
	*Dry		Annealing:
	*Wet~~: with bubbler (water steam + O~~<sub>2</sub>)		*Using N<sub>2</sub>
			Oxidation:
			*Dry oxidation using O<sub>2</sub>
			*Wet oxidation using H<sub>2</sub>O generated by a bubbler
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry ~~SiO<sub>2</sub>~~: ~~50 Å~~ to ~~~2000 Å~~ (it takes too long to grow a thicker oxide)		*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
	*Wet ~~SiO~~<~~sub~~>2</~~sub~~>~~: 50 Å to ~5 µm (it takes too long to grow a thicker oxide~~)		*Wet oxide: ~ 0 nm to 3 µm (23 hours oxidation at 1100 <sup>o</sup>C)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
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	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1 atm		*1 atm (no vacuum)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Gas flows		\|style="background:LightGrey; color:black"\|Gas flows
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	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1-30 100 mm wafers (or 50 mm wafers) ~~per run~~		*1-30 100 mm wafers (or 50 mm wafers)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Substrate materials allowed		\|style="background:LightGrey; color:black"\|Substrate materials allowed

Pevo: /* Anneal-bond furnace (C3) */

2020-01-30T14:38:22Z

Anneal-bond furnace (C3)

← Older revision		Revision as of 16:38, 30 January 2020
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	[[Image:C3.JPG\|thumb\|300x300px\|Anneal-bond furnace (C3). Positioned in cleanroom B-1]]		[[Image:C3.JPG\|thumb\|300x300px\|Anneal-bond furnace (C3). Positioned in cleanroom B-1]]

	The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O2 is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.		The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.

	This furnace is the third tube in the furnace C-stack positioned in cleanroom B-1.		This furnace is the third tube in the furnace C-stack positioned in cleanroom B-1.