Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation - Revision history

Mmat at 14:58, 3 July 2025

2025-07-03T14:58:28Z

← Older revision		Revision as of 16:58, 3 July 2025
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	~~'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III~~-~~V_oxidation click here]'''~~		{{cc-nanolab}}

	~~''This page is written by DTU Nanolab internal''~~

			'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation click here]'''
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	==General Purpose Annealing furnace (C2) ==		==General Purpose Annealing furnace (C2) ==

Pevo at 11:59, 27 May 2025

2025-05-27T11:59:24Z

← Older revision		Revision as of 13:59, 27 May 2025
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	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation click here]'''

	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''

	~~=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>=~~		==General Purpose Annealing furnace (C2) ==

	~~The furnace is being tested.~~

	==General Purpose Annealing furnace (C2)==

	The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.		The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.

	The C2 furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.		The furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.

	~~A permission from the Thin Film group is required~~, ~~before samples are annealed in the furnace~~.		Annealings can be performed in a nitrogen atmosphere, with an nitrogen flow up to 10 SLM.

	An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.		An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.

	~~Annealings can~~ be ~~performed~~ in ~~a nitrogen atmosphere, with nitrogen flow rates adjustable up to 10 SLM~~.		Samples must be able to tolerate the annealing temperature. A permission from the Thin Film group is also required, before samples are annealed in the furnace.

	~~A permission from~~ the ~~Thin Film group is required~~, before samples ~~are~~ annealed in the furnace.		Please also check the cross contamination information in LabManager, before you use the furnace. And note that samples that have been annealed in the furnace are considered "dirty" or "contaminated with metal traces" and are therefore not allowed in any other furnaces afterwards.

	~~Please also check the cross contamination information~~ in ~~LabManager before you use~~ the furnace.		4" wafers can be placed horizontally in a quartz boat in the furnace, and up to two 6" wafer can be placed horizontally on two boats. Small sample are placed on a 6" carrier wafer (with or without a recess) on a quartz boat.

	The furnace is ~~a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate~~, ~~which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time~~ and ~~then~~ the ~~furnace~~ door ~~will automatically open so that the oxidation stops and the sample is ready~~ to be ~~unloaded~~.		The motor for automatic opening and closing of furnace door is broken, and the door therefore has to be opened and closed manually.


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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Up to 30 4" wafers		*Up to 30 4" wafers
	*1 6" wafers (placed horizontally on the ~~boat~~)		*1-2 6" wafers (placed horizontally on the boats)
	*Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)		*Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
	\|-		\|-

Pevo at 11:34, 27 May 2025

2025-05-27T11:34:06Z

← Older revision		Revision as of 13:34, 27 May 2025
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	'''The user manual and contact information can be found in LabManager:'''		'''The user manual and contact information can be found in LabManager:'''

	'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88 ~~III-V Oxidation~~ furnace (C2)]'''		'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88 General Purpose Annealing furnace (C2)]'''

	==Overview of the performance of the General Purpose Annealing furnace and some process related parameters==		==Overview of the performance of the General Purpose Annealing furnace and some process related parameters==

Pevo: /* Overview of the performance of the III-V oxidation furnace and some process related parameters */

2025-05-27T11:33:22Z

Overview of the performance of the III-V oxidation furnace and some process related parameters

← Older revision		Revision as of 13:33, 27 May 2025
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	'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88 III-V Oxidation furnace (C2)]'''		'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=88 III-V Oxidation furnace (C2)]'''

	~~==Process knowledge==~~		==Overview of the performance of the General Purpose Annealing furnace and some process related parameters==
	*[[Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)\|Standard wet oxidation recipe on the III-V oxidation furnace]]

	==Overview of the performance of the ~~III-V oxidation~~ furnace and some process related parameters==

Pevo at 11:32, 27 May 2025

2025-05-27T11:32:43Z

← Older revision		Revision as of 13:32, 27 May 2025
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	*Annealing of different samples and sample materials		*Annealing of different samples and sample materials
	\|-		\|-
	!style="background:silver; color:black" align="center"\|~~Performance~~		!style="background:silver; color:black" align="center" valign="center" rowspan="4"\|Process parameter range
	\|style="background:LightGrey; color:black"\|~~Lateral oxidation rate~~		\|style="background:LightGrey; color:black"\|Annnealing temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~Very sample dependent~~		*Up to 600 <sup>o</sup>C, temperature ramp rate up to 10 <sup>o</sup>C/s
	\|-		\|-
	~~!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range~~		\|style="background:LightGrey; color:black"\|Standby temperature
	\|style="background:LightGrey; color:black"\|~~Process~~ temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~Up to 600 <sup>o</sup>C, temperature ramp rate up to 10~~ <sup>o</sup>C/s		*250 <sup>o</sup>C/s
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
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	*1 atm		*1 atm
	\|-		\|-
	\|style="background:LightGrey; color:black"\|~~Gasses~~ on the system		\|style="background:LightGrey; color:black"\|Gases on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*N<sub>2</sub>		*N<sub>2</sub>, max flow 10 SLM
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Several smaller samples (placed ~~vertically~~ on a ~~quartz plate~~)		*Up to 30 4" wafers
			*1 6" wafers (placed horizontally on the boat)
			*Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~III-V devices~~		*Most materials, but samples must be able to tolerate the annealing temperature, and a permission from the Thin Film group is required
	*Silicon
	\|-		\|-
	\|}		\|}

Pevo: /* Overview of the performance of the III-V oxidation furnace and some process related parameters */

2025-05-27T11:22:23Z

Overview of the performance of the III-V oxidation furnace and some process related parameters

← Older revision		Revision as of 13:22, 27 May 2025
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	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~Wet oxidation~~ of ~~III-V devices~~		*Annealing of different samples and sample materials
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
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	\|style="background:LightGrey; color:black"\|Process temperature		\|style="background:LightGrey; color:black"\|Process temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*~~420~~ <sup>o</sup>C		*Up to 600 <sup>o</sup>C, temperature ramp rate up to 10 <sup>o</sup>C/s
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
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	\|style="background:LightGrey; color:black"\|Gasses on the system		\|style="background:LightGrey; color:black"\|Gasses on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*N<sub>2</sub> (bubbler)
	*N<sub>2</sub>		*N<sub>2</sub>
	\|-		\|-

Pevo: /* General Purpose Annealing furnace (C2) */

2025-05-27T11:19:30Z

General Purpose Annealing furnace (C2)

← Older revision		Revision as of 13:19, 27 May 2025
Line 9:		Line 9:
	==General Purpose Annealing furnace (C2)==		==General Purpose Annealing furnace (C2)==

	The C2 furnace has ~~fromt~~ September 2024 become a general purpose ~~Annealing~~ furnace. It means that it can be used for annealing of different samples and different materials.		The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.

			The C2 furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.

			A permission from the Thin Film group is required, before samples are annealed in the furnace.

			An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.

			Annealings can be performed in a nitrogen atmosphere, with nitrogen flow rates adjustable up to 10 SLM.

	A permission from the Thin Film group is required, before samples are annealed in the furnace.		A permission from the Thin Film group is required, before samples are annealed in the furnace.

	~~III-V Oxidaiont~~ furnace (C2) is being used on August 2019 for wet oxidation of III-V devices instead of [http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)], for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.		Please also check the cross contamination information in LabManager before you use the furnace.

	The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.		The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.

	~~Before use, samples have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.~~

	~~Please check the cross contamination information in LabManager before you use the furnace.~~

	'''The user manual and contact information can be found in LabManager:'''		'''The user manual and contact information can be found in LabManager:'''

Pevo: /* III-V Oxidation furnace (C2) */

2025-05-27T11:04:11Z

III-V Oxidation furnace (C2)

← Older revision		Revision as of 13:04, 27 May 2025
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	The furnace is being tested.		The furnace is being tested.

	==~~III-V Oxidation~~ furnace (C2)==		==General Purpose Annealing furnace (C2)==

	The III-V Oxidaiont furnace (C2) is being used on August 2019 for wet oxidation of III-V devices instead of [http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)], for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.		The C2 furnace has fromt September 2024 become a general purpose Annealing furnace. It means that it can be used for annealing of different samples and different materials.

			A permission from the Thin Film group is required, before samples are annealed in the furnace.

			III-V Oxidaiont furnace (C2) is being used on August 2019 for wet oxidation of III-V devices instead of [http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)], for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

	The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.		The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.

Paphol at 13:23, 31 January 2023

2023-01-31T13:23:11Z

← Older revision		Revision as of 15:23, 31 January 2023
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	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation click here]'''

			''This page is written by DTU Nanolab internal''

	=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>=		=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>=

Pevo: /* Overview of the performance of the III-V oxidation furnace and some process related parameters */

2021-10-05T08:09:38Z

Overview of the performance of the III-V oxidation furnace and some process related parameters

← Older revision		Revision as of 10:09, 5 October 2021
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	\|style="background:LightGrey; color:black"\|Gasses on the system		\|style="background:LightGrey; color:black"\|Gasses on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*N<sub>2</sub> (~~bobler~~)		*N<sub>2</sub> (bubbler)
	*N<sub>2</sub>		*N<sub>2</sub>
	\|-		\|-