Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide - Revision history

Pevo: /* Overview of the performance of Anneal Oxide furnace and some process related parameters */

2025-09-16T12:50:01Z

Overview of the performance of Anneal Oxide furnace and some process related parameters

← Older revision		Revision as of 14:50, 16 September 2025
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	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness and quality
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)		*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)
	*Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)		*Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
			* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/C1 furnace break-down voltage measurement results\|Break-down voltage measurement results]]
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Mmat at 09:51, 3 June 2025

2025-06-03T09:51:37Z

← Older revision		Revision as of 11:51, 3 June 2025
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			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide click here]'''

	~~''This page is written by DTU Nanolab internal''~~

	[[Category: Equipment \|Thermal C1]]		[[Category: Equipment \|Thermal C1]]

Indiogo: /* Anneal-oxide furnace (C1) */

2024-02-14T14:37:32Z

Anneal-oxide furnace (C1)

← Older revision		Revision as of 16:37, 14 February 2024
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	The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.		The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.

	Oxygen is ~~using~~ as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.		Oxygen is used as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

	Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).		Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).
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	'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide furnace (C1)]'''		'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide furnace (C1)]'''


	==Process knowledge==		==Process knowledge==

Paphol at 13:21, 31 January 2023

2023-01-31T13:21:54Z

← Older revision		Revision as of 15:21, 31 January 2023
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	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide click here]'''

			''This page is written by DTU Nanolab internal''

	[[Category: Equipment \|Thermal C1]]		[[Category: Equipment \|Thermal C1]]
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	==Anneal-oxide furnace (C1)==		==Anneal-oxide furnace (C1)==
	[[Image:C1.JPG\|thumb\|300x300px\|Anneal-oxide furnace (C1). Positioned in cleanroom B-1]]		[[Image:C1.JPG\|thumb\|300x300px\|Anneal-oxide furnace (C1). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]

	The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.		The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.

Pevo: /* Process knowledge */

2022-08-26T10:15:29Z

Process knowledge

← Older revision		Revision as of 12:15, 26 August 2022
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	==Process knowledge==		==Process knowledge==
	*Wet oxidation. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace\|here]]		*General information about oxidation. More information can be found on the [[Specific Process Knowledge/Thermal Process/Oxidation\|oxidation page]]
	*Dry oxidation. More information can be found ~~on the~~ [[Specific Process Knowledge/Thermal Process/Oxidation\|~~oxidation page~~]]		*Wet oxidation in the C1 furnace. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace\|here]]
			*Dry oxidation in the C1 furnace. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace\|here]]
	*Annealing. More information can be found on the [[Specific Process Knowledge/Thermal Process/Annealing\|annealing page]]		*Annealing. More information can be found on the [[Specific Process Knowledge/Thermal Process/Annealing\|annealing page]]


	==Overview of the performance of Anneal Oxide furnace and some process related parameters==		==Overview of the performance of Anneal Oxide furnace and some process related parameters==

Pevo at 13:55, 3 February 2020

2020-02-03T13:55:24Z

← Older revision		Revision as of 15:55, 3 February 2020
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	[[Category: Thermal process\|C1]]		[[Category: Thermal process\|C1]]
	[[Category: Furnaces\|C1]]		[[Category: Furnaces\|C1]]


	==Anneal-oxide furnace (C1)==		==Anneal-oxide furnace (C1)==
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	The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.		The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.

	The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to do RCA cleaned before they enter the furnace. The only exceptions are ~~the~~ brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager before you use the furnace.		The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.

	O2 is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is ~~being~~ used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.		Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

	Annealing can be done for silicon ~~samples~~ with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 C).		Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C).

	The oxidation and annealing temperature can be up to 1100 C.		The oxidation and annealing temperature can be up to 1100 <sup>o</sup>C.


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	'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide furnace (C1)]'''		'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide furnace (C1)]'''


	==Process knowledge==		==Process knowledge==
	*Wet oxidation.. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace\|here]]		*Wet oxidation. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace\|here]]
	*Dry oxidation. More information can be found on the [[Specific Process Knowledge/Thermal Process/Oxidation\|oxidation page]]		*Dry oxidation. More information can be found on the [[Specific Process Knowledge/Thermal Process/Oxidation\|oxidation page]]
	*Annealing. More information can be found at the [[Specific Process Knowledge/Thermal Process/Annealing\|annealing page]]		*Annealing. More information can be found on the [[Specific Process Knowledge/Thermal Process/Annealing\|annealing page]]


	==Overview of the performance of Anneal Oxide furnace and some process related parameters==		==Overview of the performance of Anneal Oxide furnace and some process related parameters==
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	Annealing:		Annealing:
	*Using N<sub>2</sub>:		*Using N<sub>2</sub>
	Oxidation:		Oxidation:
	*Dry oxidation using O<sub>2</sub>:		*Dry oxidation using O<sub>2</sub>
	*Wet oxidation using H<sub>2</sub>: O vapour generated by a RASIRC steamer		*Wet oxidation using H<sub>2</sub>O vapour generated by a RASIRC steamer
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)		*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)
	*Wet SiO<sub>2</sub>: ~ 0 nm to ~ 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)		*Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Pevo: /* Overview of the performance of Anneal Oxide furnace and some process related parameters */

2020-02-03T13:49:19Z

Overview of the performance of Anneal Oxide furnace and some process related parameters

← Older revision		Revision as of 15:49, 3 February 2020
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	*Oxidation of 100 mm and 150 mm wafers		*Oxidation of 100 mm and 150 mm wafers
	*Annealing of 100 mm and 150 mm wafers		*Annealing of 100 mm and 150 mm wafers
	\|style="background:WhiteSmoke; color:black"\|Oxidation:		\|style="background:WhiteSmoke; color:black"\|
	*Dry		Annealing:
	*Wet: ~~with~~ RASIRC steamer		*Using N<sub>2</sub>:
			Oxidation:
			*Dry oxidation using O<sub>2</sub>:
			*Wet oxidation using H<sub>2</sub>: O vapour generated by a RASIRC steamer
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry SiO<sub>2</sub>: ~~50Å~~ to ~~~2000Å~~ (it takes too long to grow a thicker oxide)		*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers)
	*Wet SiO<sub>2</sub>: ~~50Å~~ to ~~~5µm~~ (~~it takes too long to grow a thicker oxide~~)		*Wet SiO<sub>2</sub>: ~ 0 nm to ~ 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
	\|style="background:LightGrey; color:black"\|Process Temperature		\|style="background:LightGrey; color:black"\|Process Temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*800-~~1150~~ <sup>o</sup>C		*800-1100 <sup>o</sup>C
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1 atm		*1 atm (no vacuum)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Gas flows		\|style="background:LightGrey; color:black"\|Gas flows
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	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1-30 100 mm or 150 mm wafers (or 50 mm wafers) ~~per run~~		*1-30 100 mm or 150 mm wafers (or 50 mm wafers)
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*New silicon wafers ~~(No need RCA cleaned)~~		*New silicon wafers
	*Silicon wafers with layers of silicon oxide or silicon ~~(oxy)~~nitride (RCA cleaned)		*Silicon wafers with layers of silicon oxide or silicon nitride (RCA cleaned)
	*Wafers from the LPCVD furnaces		*Wafers from the LPCVD furnaces
	*Wafers from PECVD4		*Wafers from PECVD4
	\|-		\|-
	\|}		\|}

Pevo: /* Process knowledge */

2020-02-03T13:43:09Z

Process knowledge

← Older revision		Revision as of 15:43, 3 February 2020
Line 24:		Line 24:

	==Process knowledge==		==Process knowledge==
	*~~WET~~ oxidation~~: with~~ [[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace\|~~steamer~~]]		*Wet oxidation.. More information can be found [[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace\|here]]
	*~~DRY~~ oxidation~~: look at~~ the [[Specific Process Knowledge/Thermal Process/Oxidation\|~~Oxidation~~]] ~~page~~		*Dry oxidation. More information can be found on the [[Specific Process Knowledge/Thermal Process/Oxidation\|oxidation page]]
	*Annealing~~: look~~ at the [[Specific Process Knowledge/Thermal Process/Annealing\|~~Annealing~~]] ~~page~~		*Annealing. More information can be found at the [[Specific Process Knowledge/Thermal Process/Annealing\|annealing page]]

	==Overview of the performance of Anneal Oxide furnace and some process related parameters==		==Overview of the performance of Anneal Oxide furnace and some process related parameters==

Pevo: /* Anneal-oxide furnace (C1) */

2020-02-03T13:31:59Z

Anneal-oxide furnace (C1)

← Older revision		Revision as of 15:31, 3 February 2020
Line 8:		Line 8:
	[[Image:C1.JPG\|thumb\|300x300px\|Anneal-oxide furnace (C1). Positioned in cleanroom B-1]]		[[Image:C1.JPG\|thumb\|300x300px\|Anneal-oxide furnace (C1). Positioned in cleanroom B-1]]

	The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers~~, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2)~~. Both 100 mm and 150 mm wafers can be processed in the furnace.		The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.

	The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.		The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to do RCA cleaned before they enter the furnace. The only exceptions are the brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager before you use the furnace.

			O2 is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is being used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

			Annealing can be done for silicon samples with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 C).

			The oxidation and annealing temperature can be up to 1100 C.

	The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to do RCA cleaned before they enter the furnace. The only exceptions are the brand new wafers, the wafers from A-stack furnaces, the wafers from PECVD4 and the LPCVD furnaces. Please check the cross contamination information in LabManager before you use the furnace

	'''The user manual, technical information and contact information can be found in LabManager:'''		'''The user manual, technical information and contact information can be found in LabManager:'''

Pevo: /* Anneal-oxide furnace (C1) */

2017-08-30T11:18:34Z

Anneal-oxide furnace (C1)

← Older revision		Revision as of 13:18, 30 August 2017
Line 9:		Line 9:

	The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.		The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.

			The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

	The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to do RCA cleaned before they enter the furnace. The only exceptions are the brand new wafers, the wafers from A-stack furnaces, the wafers from PECVD4 and the LPCVD furnaces. Please check the cross contamination information in LabManager before you use the furnace		The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to do RCA cleaned before they enter the furnace. The only exceptions are the brand new wafers, the wafers from A-stack furnaces, the wafers from PECVD4 and the LPCVD furnaces. Please check the cross contamination information in LabManager before you use the furnace