Specific Process Knowledge/Thermal Process/Annealing - Revision history

Mmat at 10:04, 3 June 2025

2025-06-03T10:04:31Z

← Older revision		Revision as of 12:04, 3 June 2025
Line 1:		Line 1:
			{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''
			<br>
	~~''This page is written by DTU Nanolab internal''~~		<br>
	==Annealing==		==Annealing==

Pevo: /* Comparison of the annealing furnaces */

2024-11-07T14:12:00Z

Comparison of the annealing furnaces

← Older revision		Revision as of 16:12, 7 November 2024
Line 76:		Line 76:
	\|		\|
	*350 <sup>o</sup>C - 1150 <sup>o</sup>C		*350 <sup>o</sup>C - 1150 <sup>o</sup>C
	*Max 500 <sup>o</sup>C for wafers and ~~sample~~ with Al		*Max 500 <sup>o</sup>C for wafers and samples with Al
	\|		\|
	*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨		*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨

Pevo: /* Comparison of the annealing furnaces */

2024-11-07T14:11:32Z

Comparison of the annealing furnaces

← Older revision		Revision as of 16:11, 7 November 2024
Line 76:		Line 76:
	\|		\|
	*350 <sup>o</sup>C - 1150 <sup>o</sup>C		*350 <sup>o</sup>C - 1150 <sup>o</sup>C
			*Max 500 <sup>o</sup>C for wafers and sample with Al
	\|		\|
	*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨		*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨

Pevo: /* Comparison of the annealing furnaces */

2024-11-07T14:07:04Z

Comparison of the annealing furnaces

← Older revision		Revision as of 16:07, 7 November 2024
Line 23:		Line 23:
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\|~~Multipurpose Anneal Furnace~~ (research tool)]]		[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\|Resist Pyrolysis (research tool)]]
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]		[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]
Line 35:		Line 35:
	\|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.		\|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.
	\|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.		\|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
	\|Annealing of wafers with Al and ALD deposited ~~AL2O3~~ and ~~TiO2.~~		\|Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
	\|Resist pyrolysis		\|Resist pyrolysis
	\|Rapid thermal processing, usually, annealing (RTA).		\|Rapid thermal processing, usually, annealing (RTA).
Line 50:		Line 50:
	\|		\|
	*N<sub>2</sub>		*N<sub>2</sub>
			*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested)
	\|		\|
	*N<sub>2</sub>		*N<sub>2</sub>
Line 74:		Line 75:
	*700 <sup>o</sup>C - 1150 <sup>o</sup>C		*700 <sup>o</sup>C - 1150 <sup>o</sup>C
	\|		\|
	*~~Up to 500~~ <sup>o</sup>C		*350 <sup>o</sup>C - 1150 <sup>o</sup>C
	\|		\|
	*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨		*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
Line 91:		Line 92:
	!Substrate and Batch size		!Substrate and Batch size
	\|		\|
	*Small samples on a carrier wafer, horizontal
	*1-30 50 mm wafers		*1-30 50 mm wafers
	*1-30 100 mm wafers		*1-30 100 mm wafers
	*1-30 150 mm ~~wafers~~		*1-30 150 mm wafer
			*(Small samples on a carrier wafer, horizontal)
	\|		\|
	*Small samples on a carrier wafer, horizontal
	*1-30 50 mm wafers		*1-30 50 mm wafers
	*1-30 100 mm wafers		*1-30 100 mm wafers
			*Small samples on a carrier wafer, horizontal
	\|		\|
	*1-30 50 mm wafers		*1-30 50 mm wafers
	*1-30 100 mm wafers		*1-30 100 mm wafers
			*1 150 mm wafer
			*Small samples on a carrier wafer, horizontal
	\|		\|
	*1-30 50 mm, 100 mm or 150 mm wafers		*1-30 50 mm, 100 mm or 150 mm wafers
	*1-50 200 mm wafers
	*Small samples on a carrier wafer, horizontal		*Small samples on a carrier wafer, horizontal
	\|		\|
Line 124:		Line 126:
	*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.		*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
	\|		\|
	*Wafers with Al		*Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
	\|		\|
	*Samples for resist pyrolysis.		*Samples for resist pyrolysis.

Pevo: /* Comparison of the annealing furnaces */

2024-11-01T12:33:59Z

Comparison of the annealing furnaces

← Older revision		Revision as of 14:33, 1 November 2024
Line 23:		Line 23:
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]] (research tool)		[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\|Multipurpose Anneal Furnace (research tool)]]
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]		[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]

Pevo at 12:33, 1 November 2024

2024-11-01T12:33:14Z

← Older revision		Revision as of 14:33, 1 November 2024
Line 23:		Line 23:
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]]		[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]] (research tool)
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]		[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]

Pevo at 12:32, 1 November 2024

2024-11-01T12:32:10Z

← Older revision		Revision as of 14:32, 1 November 2024
Line 36:		Line 36:
	\|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.		\|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
	\|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.		\|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
	\|~~Annealing, oxidation and resist~~ pyrolysis ~~of different samples.~~		\|Resist pyrolysis
	\|Rapid thermal processing, usually, annealing (RTA).		\|Rapid thermal processing, usually, annealing (RTA).
	\|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).		\|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
Line 52:		Line 52:
	\|		\|
	*N<sub>2</sub>		*N<sub>2</sub>
	*~~H<sub>2</sub>~~		*(H<sub>2</sub>-N<sub>2</sub> gas mixture)
	*H<sub>2</sub>-N<sub>2</sub> gas mixture
	*Vacuum is possible		*Vacuum is possible
	\|		\|
Line 78:		Line 77:
	\|		\|
	*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨		*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
	*No vacuum: 20 <sup>o</sup>C - ~~1100~~ <sup>o</sup>C		*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
	\|		\|
	*20 <sup>o</sup>C - 1200 <sup>o</sup>C		*20 <sup>o</sup>C - 1200 <sup>o</sup>C
Line 127:		Line 126:
	*Wafers with Al		*Wafers with Al
	\|		\|
	*~~Depends on the furnace quartz ware:~~		*Samples for resist pyrolysis.
	**Clean: Samples ~~that have been RCA cleaned~~		*No metals allowed
	**Metal: Almost all materials, permission is needed
	**Resist (for pyrolysis)
	\|		\|
	*Silicon		*Silicon

Indiogo: /* Comparison of the annealing furnaces */

2024-01-18T14:38:22Z

Comparison of the annealing furnaces

← Older revision		Revision as of 16:38, 18 January 2024
Line 135:		Line 135:
	*Silicon oxides and nitrides		*Silicon oxides and nitrides
	*Quartz		*Quartz
	*Metals - ask for ~~permisson~~		*Metals - ask for permission
	*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.		*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
	\|		\|

Indiogo: /* Comparison of the annealing furnaces */

2024-01-09T14:52:06Z

Comparison of the annealing furnaces

← Older revision		Revision as of 16:52, 9 January 2024
Line 85:		Line 85:
	\|		\|
	*700 <sup>o</sup>C - 1200 <sup>o</sup>C		*700 <sup>o</sup>C - 1200 <sup>o</sup>C
			*Max. 150 <sup>o</sup>C/s
	\|-		\|-

Indiogo: /* Comparison of the annealing furnaces */

2024-01-08T14:05:14Z

Comparison of the annealing furnaces

← Older revision		Revision as of 16:05, 8 January 2024
Line 22:		Line 22:
	!		!
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]
			!
			[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]]
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]		[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]
	!
	~~[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]]~~
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys\| RTP Annealsys (research tool)]]		[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys\| RTP Annealsys (research tool)]]
Line 36:		Line 36:
	\|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.		\|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
	\|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.		\|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
			\|Annealing, oxidation and resist pyrolysis of different samples.
	\|Rapid thermal processing, usually, annealing (RTA).		\|Rapid thermal processing, usually, annealing (RTA).
	~~\|Annealing, oxidation and resist pyrolysis of different samples.~~
	\|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).		\|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
	\|-		\|-
Line 50:		Line 50:
	\|		\|
	*N<sub>2</sub>		*N<sub>2</sub>
	\|
	*Ar
	*N<sub>2</sub>
	*Low vacuum is possible (min. 2/3 mbar)
	\|		\|
	*N<sub>2</sub>		*N<sub>2</sub>
Line 59:		Line 55:
	*H<sub>2</sub>-N<sub>2</sub> gas mixture		*H<sub>2</sub>-N<sub>2</sub> gas mixture
	*Vacuum is possible		*Vacuum is possible
			\|
			*Ar
			*N<sub>2</sub>
			*Low vacuum is possible (min. 2/3 mbar)
	\|		\|
	*Ar		*Ar
Line 76:		Line 76:
	\|		\|
	*Up to 500 <sup>o</sup>C		*Up to 500 <sup>o</sup>C
			\|
			*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
			*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C
	\|		\|
	*20 <sup>o</sup>C - 1200 <sup>o</sup>C		*20 <sup>o</sup>C - 1200 <sup>o</sup>C
	* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer'''		* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer'''
	* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''		* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
	\|
	*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
	*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C
	\|		\|
	*700 <sup>o</sup>C - 1200 <sup>o</sup>C		*700 <sup>o</sup>C - 1200 <sup>o</sup>C
Line 102:		Line 102:
	*1-30 50 mm wafers		*1-30 50 mm wafers
	*1-30 100 mm wafers		*1-30 100 mm wafers
			\|
			*1-30 50 mm, 100 mm or 150 mm wafers
			*1-50 200 mm wafers
			*Small samples on a carrier wafer, horizontal
	\|		\|
	*Single-wafer process		*Single-wafer process
	*Chips on carrier		*Chips on carrier
	*50 mm, 100 mm or 150 mm wafers		*50 mm, 100 mm or 150 mm wafers
	\|
	*1-30 50 mm, 100 mm or 150 mm wafers
	*1-50 200 mm wafers
	*Small samples on a carrier wafer, horizontal
	\|		\|
	*Single-wafer process		*Single-wafer process
Line 125:		Line 125:
	\|		\|
	*Wafers with Al		*Wafers with Al
			\|
			*Depends on the furnace quartz ware:
			**Clean: Samples that have been RCA cleaned
			**Metal: Almost all materials, permission is needed
			**Resist (for pyrolysis)
	\|		\|
	*Silicon		*Silicon
Line 131:		Line 136:
	*Metals - ask for permisson		*Metals - ask for permisson
	*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.		*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
	\|
	*Depends on the furnace quartz ware:
	**Clean: Samples that have been RCA cleaned
	**Metal: Almost all materials, permission is needed
	**Resist (for pyrolysis)
	\|		\|
	*Silicon		*Silicon

← Older revision		Revision as of 14:33, 1 November 2024
Line 23:		Line 23:
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]] (research tool)		[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\|Multipurpose Anneal Furnace (research tool)]]
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]		[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]

← Older revision		Revision as of 14:33, 1 November 2024
Line 23:		Line 23:
	[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]		[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace\|Aluminium Anneal furnace (C4)]]
	!		!
	[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]]		[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing\| Multipurpose Anneal Furnace]] (research tool)
	!		!
	[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]		[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2\| RTP2 Jipelec]]