Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace - Revision history

Pevo: /* Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters */

2025-08-04T13:22:15Z

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

← Older revision		Revision as of 15:22, 4 August 2025
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Phosphorus doping/pre-deposition using POCl<sub>3</sub>		*Phosphorus doping/pre-deposition using POCl<sub>3</sub>
			*Dry oxidation using O<sub>2</sub>. 0-300 nm Si<sub>2</sub>
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
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	*1 atm (atmospheric pressure)		*1 atm (atmospheric pressure)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|~~Gasses~~ on the system		\|style="background:LightGrey; color:black"\|Gases on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|

	*POCl<sub>3</sub>		*POCl<sub>3</sub>
			*O<sub>2</sub>
	*N<sub>2</sub>		*N<sub>2</sub>
	\|-		\|-

Pevo: Text

2025-08-04T12:21:28Z

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Pevo: Text

2025-08-04T12:18:22Z

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← Older revision		Revision as of 14:18, 4 August 2025
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	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''
	[[Category: Equipment \|Thermal A4]]		[[index.php?title=Category:Equipment\|Thermal A4]]
	[[Category: Thermal process\|Furnace]]		[[index.php?title=Category:Thermal process\|Furnace]]
	[[Category: Furnaces\|A4]]		[[index.php?title=Category:Furnaces\|A4]]

	==Phosphorus Pre-dep furnace (A4)==		==Phosphorus Pre-dep furnace (A4)==
	[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]		[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]

	The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to ~~make~~ conductive structures, etch stop layers ~~etc~~. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.		The Phosphorus Pre-dep furnace (A4) is mainly used to dope Si wafers with phosphorus. The furnace can also be used for dry oxidation of Si wafers.

			The A4 furnace is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.

			'''Phosphorous doping of Si wafers'''

			Phosphorus is an n-type dopant that can be diffused into Si wafers (normally p-type) to form an n-type layer near the wafer surface. The doping will change the electrical properties of the silicon, so that for instance conductive structures, etch stop layers can be made.

			The phosphorus doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which a colourless liquid with the chemical formula POCl<sub>3</sub>. Furthermore, an oxygen (O<sub>2</sub>) flow is needed for the doping process.The POCl<sub>3</sub> is stored in a bubbler, and nitrogen (N<sub>2</sub>) gas is flowing though the bubbler.

			There are two primary steps within a phosphorus doping/pre-deposition process: A pre-deposition step and a diffusion/drive-in step (not a drive-in process). The final profile of the doping concentration near the wafer surface depends on the pre-deposition and the drive-in temperatures and times.

			After the phosphorous pre-deposition process, a phosphorus doped silicon oxide layer, i.e. a phosphosilicate glass layer, remains in the surface of the wafers. This layer can be removed by hydroflouric acid (HF) in the BHF etch bath at the RCA cleaning bench. When the phosphosilicate glass layer has been removed, a drive-in process (an annealing or a thermal oxidation) is done.

			Normally, only the phosphorous doping/pre-deposition is done the Phosphorus Pre-dep furnace (A4), while the drive-in process is done in the A3 Phosphorus Drive-in furnace.

			'''Dry oxidation of Si wafers (or phosphorus phase layers created in the phosphorus doping/pre-deposition process)'''

			For dry the dry oxidation processes, oxygen (O<sub>2</sub>) is used as oxidant.

	A4 is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.

Paphol: /* Phosphorus Pre-dep furnace (A4) */

2023-01-31T13:08:35Z

Phosphorus Pre-dep furnace (A4)

← Older revision		Revision as of 15:08, 31 January 2023
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	==Phosphorus Pre-dep furnace (A4)==		==Phosphorus Pre-dep furnace (A4)==
	[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1]]		[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]

	The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.		The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.

Paphol at 13:08, 31 January 2023

2023-01-31T13:08:10Z

← Older revision		Revision as of 15:08, 31 January 2023
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	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace click here]'''

	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''
	[[Category: Equipment \|Thermal A4]]		[[Category: Equipment \|Thermal A4]]

Paphol at 13:07, 31 January 2023

2023-01-31T13:07:56Z

← Older revision		Revision as of 15:07, 31 January 2023
Line 1:		Line 1:
	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace click here]'''
			''This page is written by DTU Nanolab internal''
	[[Category: Equipment \|Thermal A4]]		[[Category: Equipment \|Thermal A4]]
	[[Category: Thermal process\|Furnace]]		[[Category: Thermal process\|Furnace]]

Pevo: /* Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters */

2021-10-05T08:14:36Z

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

← Older revision		Revision as of 10:14, 5 October 2021
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	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Phosphorus pre-deposition using POCl<sub>3</sub>		*Phosphorus doping/pre-deposition using POCl<sub>3</sub>
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Pevo: /* Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters */

2021-10-05T08:14:03Z

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

← Older revision		Revision as of 10:14, 5 October 2021
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	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Phosphorus pre-deposition using ~~POCL~~<sub>3</sub>		*Phosphorus pre-deposition using POCl<sub>3</sub>
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Pevo: /* Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters */

2019-04-01T08:25:10Z

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

← Older revision		Revision as of 10:25, 1 April 2019
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	!style="background:silver; color:black;" align="center"\|Purpose		!style="background:silver; color:black;" align="center"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
			\|style="background:WhiteSmoke; color:black"\|
	*Phosphorus pre-deposition using POCL<sub>3</sub>		*Phosphorus pre-deposition using POCL<sub>3</sub>
	~~\|style="background:WhiteSmoke; color:black"\|~~
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
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	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1 atm		*1 atm (atmospheric pressure)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Gasses on the system		\|style="background:LightGrey; color:black"\|Gasses on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|

	*POCl<sub>3</sub>, N<sub>2</sub>		*POCl<sub>3</sub>
			*N<sub>2</sub>
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1-30 100 mm wafers ~~(or 50 mm wafers) per run~~		*1-30 100 mm wafers
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed

Pevo: /* Phosphorus Pre-dep furnace (A4) */

2019-04-01T08:23:06Z

Phosphorus Pre-dep furnace (A4)

← Older revision		Revision as of 10:23, 1 April 2019
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	==Phosphorus Pre-dep furnace (A4)==		==Phosphorus Pre-dep furnace (A4)==
	[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom 2]]		[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1]]

	The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.		The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.

← Older revision		Revision as of 10:25, 1 April 2019
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	!style="background:silver; color:black;" align="center"\|Purpose		!style="background:silver; color:black;" align="center"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
			\|style="background:WhiteSmoke; color:black"\|
	*Phosphorus pre-deposition using POCL<sub>3</sub>		*Phosphorus pre-deposition using POCL<sub>3</sub>
	~~\|style="background:WhiteSmoke; color:black"\|~~
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
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	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1 atm		*1 atm (atmospheric pressure)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Gasses on the system		\|style="background:LightGrey; color:black"\|Gasses on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|

	*POCl<sub>3</sub>, N<sub>2</sub>		*POCl<sub>3</sub>
			*N<sub>2</sub>
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
	\|style="background:LightGrey; color:black"\|Batch size		\|style="background:LightGrey; color:black"\|Batch size
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1-30 100 mm wafers ~~(or 50 mm wafers) per run~~		*1-30 100 mm wafers
	\|-		\|-
	\| style="background:LightGrey; color:black"\|Substrate materials allowed		\| style="background:LightGrey; color:black"\|Substrate materials allowed

← Older revision		Revision as of 14:21, 4 August 2025
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	==Phosphorus Pre-dep furnace (A4)==		==Phosphorus Pre-dep furnace (A4)==
	[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]		[[Image:A4.JPG\|thumb\|300x300px\|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']]

	The Phosphorus Pre-dep furnace (A4) is mainly used to dope Si wafers with phosphorus. The furnace can also be used for dry oxidation of Si wafers.		The Phosphorus Pre-dep furnace (A4) is mainly used to dope Si wafers with phosphorus. The furnace can also be used for dry oxidation of Si wafers or phosphorus phase layers created in the phosphorus doping/pre-deposition process.

	The A4 furnace is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.		The A4 furnace is the lowest furnace tube in the furnace A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.

	'''Phosphorous doping of Si wafers'''		'''Phosphorous doping of Si wafers'''

	Phosphorus is an n-type dopant that can be diffused into Si wafers (normally p-type) to form an n-type layer near the wafer surface. The doping will change the electrical properties of the silicon, so that for instance conductive structures, etch stop layers can be made.		Phosphorus is an n-type dopant that can be diffused into Si wafers (normally p-type) to form an n-type layer near the wafer surface. The doping will change the electrical properties of the silicon, so that for instance conductive structures and etch stop layers can be made.

	The phosphorus doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which a colourless liquid with the chemical formula POCl<sub>3</sub>. Furthermore, an oxygen (O<sub>2</sub>) flow is needed for the doping process.The POCl<sub>3</sub> is stored in a bubbler, and nitrogen (N<sub>2</sub>) gas is flowing though the bubbler.		The phosphorus doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>. Furthermore, an oxygen (O<sub>2</sub>) flow is needed for the doping process. The POCl<sub>3</sub> is stored in a bubbler, and nitrogen (N<sub>2</sub>) gas is flowing though the bubbler.

	There are two primary steps within a phosphorus doping/pre-deposition process: A pre-deposition step and a diffusion/drive-in step ~~(not a drive-in process)~~. The final profile of the doping concentration near the wafer surface depends on the pre-deposition and the drive-in temperatures and times.		There are two primary steps within a phosphorus doping/pre-deposition process: A pre-deposition step and a diffusion/drive-in step. The final profile of the doping concentration near the wafer surface depends on the pre-deposition and the drive-in temperatures and times.

	After the phosphorous pre-deposition process, a phosphorus doped silicon oxide layer, i.e. a phosphosilicate glass layer, remains in the surface of the wafers. This layer can be removed by hydroflouric acid (HF) in the BHF etch bath at the RCA cleaning bench. When the phosphosilicate glass layer has been removed, a drive-in process (an annealing or a thermal oxidation) is done.		After the phosphorous pre-deposition process, a phosphorus doped silicon oxide layer, i.e. a phosphosilicate glass layer, remains in the surface of the wafers. This layer can be removed by hydroflouric acid (HF) in the BHF etch bath at the RCA cleaning bench. When the phosphosilicate glass layer has been removed, a drive-in process (an annealing or a thermal oxidation) is done.
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	'''Dry oxidation of Si wafers (or phosphorus phase layers created in the phosphorus doping/pre-deposition process)'''		'''Dry oxidation of Si wafers (or phosphorus phase layers created in the phosphorus doping/pre-deposition process)'''

	For ~~dry the~~ dry oxidation processes, oxygen (O<sub>2</sub>) is used as oxidant.		For dry oxidation processes, oxygen (O<sub>2</sub>) is used as oxidant.



	'''The user manual, technical information and contact information can be found in LabManager:'''		'''The user manual, technical information and contact information can be found in LabManager:'''