Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace - Revision history

Pevo: /* Overview of the performance of the phosphorus drive-in furnace and some process related parameters */

2025-09-16T12:49:06Z

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

← Older revision		Revision as of 14:49, 16 September 2025
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	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness and quality
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)		*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
	*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)		*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
			* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A3 furnace break-down voltage measurement results\|Break-down voltage measurement results]]
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Paphol: /* Phosphorus Drive-in furnace (A3) */

2023-01-31T13:04:23Z

Phosphorus Drive-in furnace (A3)

← Older revision		Revision as of 15:04, 31 January 2023
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	==Phosphorus Drive-in furnace (A3)==		==Phosphorus Drive-in furnace (A3)==
	[[Image:A3helstak.jpg\|thumb\|400x400px\|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1]]		[[Image:A3helstak.jpg\|thumb\|400x400px\|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]

	The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation.		The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation.
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	'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=82 Phosphorus Drive-in furnace (A3)]'''		'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=82 Phosphorus Drive-in furnace (A3)]'''


	==Process knowledge==		==Process knowledge==

Paphol at 13:03, 31 January 2023

2023-01-31T13:03:51Z

← Older revision		Revision as of 15:03, 31 January 2023
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	'''Feedback to this page''': '''[mailto:~~labadviser~~@nanolab.dtu.dk Subject=Feed%20back%20from%20page%20http://labadviser.~~nanolab~~.dtu.dk/index.php~~?title=~~Specific_Process_Knowledge~~/Thermal_Process~~/A3_Phosphor_Drive-in_furnace click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/A3_Phosphor_Drive-in_furnace click here]'''

			''This page is written by DTU Nanolab internal''

	[[Category: Equipment \|Thermal A3]]		[[Category: Equipment \|Thermal A3]]
	[[Category: Thermal process\|Furnace]]		[[Category: Thermal process\|Furnace]]
	[[Category: Furnaces\|A3]]		[[Category: Furnaces\|A3]]


	==Phosphorus Drive-in furnace (A3)==		==Phosphorus Drive-in furnace (A3)==

Reet: changed mailto address

2020-07-15T20:59:08Z

changed mailto address

← Older revision		Revision as of 22:59, 15 July 2020
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	'''Feedback to this page''': '''[mailto:~~thinfilm~~@~~danchip~~.dtu.dk?Subject=Feed%20back%20from%20page%20http~~://http~~://labadviser.~~danchip~~.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace click here]'''

	[[Category: Equipment \|Thermal A3]]		[[Category: Equipment \|Thermal A3]]

Reet: /* Quality Control - Recipe Parameters and Limits */ fixed links

2020-07-15T20:57:17Z

Quality Control - Recipe Parameters and Limits: fixed links

← Older revision		Revision as of 22:57, 15 July 2020
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	\|		\|
	*[http://~~www.~~labmanager~~.danchip~~.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>		*[http://labmanager.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>
	*[~~http~~://~~www.~~labmanager~~.danchip~~.dtu.dk/view_binary.php?~~fileId~~=~~1988~~ The newest QC data for wet and dry oxide]<br>		*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=82 The newest QC data for wet and dry oxide]<br>

	{\| {{table}}		{\| {{table}}
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	Numbers from March 2020		Numbers from March 2020
	\|}		\|}


	==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==		==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==

Pevo: /* Overview of the performance of the phosphorus drive-in furnace and some process related parameters */

2020-03-18T13:21:26Z

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

← Older revision		Revision as of 15:21, 18 March 2020
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Silicon wafers (RCA cleaned)		*Silicon wafers (RCA cleaned)
	*Wafers coming ~~form~~ the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace		*Wafers coming from the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace
	\|-		\|-
	\|}		\|}

Pevo: /* Overview of the performance of the phosphorus drive-in furnace and some process related parameters */

2020-03-18T13:21:03Z

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

← Older revision		Revision as of 15:21, 18 March 2020
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	*Thermal oxidation of Si wafers		*Thermal oxidation of Si wafers
	*Driving-in pre-deposited or ion-implanted phosphorus		*Driving-in pre-deposited or ion-implanted phosphorus
	\|style="background:WhiteSmoke; color:black"\|~~Oxidation:~~		\|style="background:WhiteSmoke; color:black"\|
	Thermal oxidation:		Thermal oxidation:
	*Dry oxidation using O<sub>2</sub>		*Dry oxidation using O<sub>2</sub>
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)		*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
	*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)		*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
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	*N<sub>2</sub>		*N<sub>2</sub>
	*O<sub>2</sub>		*O<sub>2</sub>
	*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into ~~water vapour~~ for wet oxidation)		*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into H<sub>2</sub>O for wet oxidation)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Silicon wafers (RCA cleaned)		*Silicon wafers (RCA cleaned)
	*Wafers ~~from the~~ the Phosphorus Pre-dep furnace ~~(A4 )~~can go directly into the furnace		*Wafers coming form the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace
	\|-		\|-
	\|}		\|}

Pevo at 13:18, 18 March 2020

2020-03-18T13:18:42Z

← Older revision		Revision as of 15:18, 18 March 2020
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	Numbers from March 2020		Numbers from March 2020
	\|}		\|}


	==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==		==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==

Pevo: /* Overview of the performance of the phosphorus drive-in furnace and some process related parameters */

2020-03-18T13:17:52Z

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

← Older revision		Revision as of 15:17, 18 March 2020
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	!style="background:silver; color:black;" align="center"\|Purpose		!style="background:silver; color:black;" align="center"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	*~~Drive-in~~ of ~~phosphorous~~		*Thermal oxidation of Si wafers
	*~~Oxidation of silicon~~		*Driving-in pre-deposited or ion-implanted phosphorus
	*Oxidation of phosphorous phase layers
	\|style="background:WhiteSmoke; color:black"\|Oxidation:		\|style="background:WhiteSmoke; color:black"\|Oxidation:
	*Dry		Thermal oxidation:
	*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)		*Dry oxidation using O<sub>2</sub>
			*Wet oxidation using H<sub>2</sub>O vapour
			Driving-in pre-deposited or ion-implanted phosphorus
			*Dry or wet oxidation recipes are normally used for this purpose
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry ~~SiO<sub>2</sub>~~: ~~50 Å to~~ ~~~2000 Å~~ (it takes too long to grow a thicker oxide ~~layer~~)		*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
	*Wet ~~SiO~~<~~sub~~>2</~~sub~~>~~: 50 Å to ~3 µm (it takes too long to grow a thicker oxide layer~~)		*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range
	\|style="background:LightGrey; color:black"\|Process Temperature		\|style="background:LightGrey; color:black"\|Process Temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*800-1150 <sup>o</sup>C		*800 <sup>o</sup>C - 1150 <sup>o</sup>C
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*1 atm		*1 atm (no vacuum)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Gasses on the system		\|style="background:LightGrey; color:black"\|Gasses on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*O<sub>2</sub>, N<sub>2</sub> and H<sub>2</sub>		*N<sub>2</sub>
			*O<sub>2</sub>
			*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into water vapour for wet oxidation)
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates		!style="background:silver; color:black" align="center" valign="center" rowspan="2"\|Substrates
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Silicon wafers (RCA cleaned)		*Silicon wafers (RCA cleaned)
	*Wafers from the the Phosphorus Pre-dep furnace can go directly into the furnace		*Wafers from the the Phosphorus Pre-dep furnace (A4 )can go directly into the furnace
	\|-		\|-
	\|}		\|}

Pevo: /* Quality Control - Recipe Parameters and Limits */

2020-03-18T13:13:53Z

Quality Control - Recipe Parameters and Limits

← Older revision		Revision as of 15:13, 18 March 2020
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	! QC Recipe:		! QC Recipe:
	! ~~Wet1050~~		! WET1050
	! ~~Dry1050~~		! DRY1050
	\|-		\|-
	\| H<sub>2</sub> flow		\| H<sub>2</sub> flow
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	and over the boat)		and over the boat)
	\|-		\|-
	!~~Dry1050~~		!DRY1050
	\|110-116 nm		\|110-116 nm
	\|3 %		\|3 %
	\|-		\|-
	!~~Wet1050~~		!WET1050
	\|305-321 nm		\|305-321 nm
	\|5 %		\|5 %