Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace - Revision history

Pevo: /* Overview of the performance of the Gate Oxide furnace and some process related parameters */

2025-09-16T12:48:16Z

Overview of the performance of the Gate Oxide furnace and some process related parameters

← Older revision		Revision as of 14:48, 16 September 2025
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	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance
	\|style="background:LightGrey; color:black"\|Film thickness		\|style="background:LightGrey; color:black"\|Film thickness and quality
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)		*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)

Pevo: /* Overview of the performance of the Gate Oxide furnace and some process related parameters */

2025-09-16T12:46:20Z

Overview of the performance of the Gate Oxide furnace and some process related parameters

← Older revision		Revision as of 14:46, 16 September 2025
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	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)		*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
			* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A2 furnace break-down voltage measurement results\|Break-down voltage measurement results]]
	\|-		\|-
	!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range		!style="background:silver; color:black" align="center" valign="center" rowspan="3"\|Process parameter range

Pevo: /* Overview of the performance of the Gate Oxide furnace and some process related parameters */

2025-08-04T07:56:24Z

Overview of the performance of the Gate Oxide furnace and some process related parameters

← Older revision		Revision as of 09:56, 4 August 2025
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	Oxidation of silicon wafers (e.g. gate oxide layers)		Oxidation of silicon wafers (e.g. gate oxide layers)
	\|style="background:WhiteSmoke; color:black"\|Oxidation:		\|style="background:WhiteSmoke; color:black"\|Oxidation:
	*Dry oxidation using O<sub>2</sub>		*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>
	\|-		\|-
	!style="background:silver; color:black" align="center"\|Performance		!style="background:silver; color:black" align="center"\|Performance

Pevo: Text

2025-08-04T07:54:39Z

Text

← Older revision		Revision as of 09:54, 4 August 2025
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	[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']]		[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']]

	The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).		The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is a very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).

	Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.		Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.

Pevo: /* Overview of the performance of the Gate Oxide furnace and some process related parameters */

2025-08-04T07:53:02Z

Overview of the performance of the Gate Oxide furnace and some process related parameters

← Older revision		Revision as of 09:53, 4 August 2025
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	!style="background:silver; color:black;" align="center"\|Purpose		!style="background:silver; color:black;" align="center"\|Purpose
	\|style="background:LightGrey; color:black"\|		\|style="background:LightGrey; color:black"\|
	*Oxidation of silicon wafers (e.g. gate oxide layers)		Oxidation of silicon wafers (e.g. gate oxide layers)
	\|style="background:WhiteSmoke; color:black"\|Oxidation:		\|style="background:WhiteSmoke; color:black"\|Oxidation:
	*Dry oxidation using O<sub>2</sub>		*Dry oxidation using O<sub>2</sub>
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	\|style="background:LightGrey; color:black"\|Process Temperature		\|style="background:LightGrey; color:black"\|Process Temperature
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*800-1150 <sup>o</sup>C		*800 <sup>o</sup>C - 1150 <sup>o</sup>C
	\|-		\|-
	\|style="background:LightGrey; color:black"\|Process pressure		\|style="background:LightGrey; color:black"\|Process pressure
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	*1 atm (no vacuum)		*1 atm (no vacuum)
	\|-		\|-
	\|style="background:LightGrey; color:black"\|~~Gasses~~ on the system		\|style="background:LightGrey; color:black"\|Gases on the system
	\|style="background:WhiteSmoke; color:black"\|		\|style="background:WhiteSmoke; color:black"\|
	*N<sub>2</sub>		*N<sub>2</sub>

Pevo: Text

2025-08-04T07:49:56Z

Text

← Older revision		Revision as of 09:49, 4 August 2025
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	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''
	[[Category: Equipment \|Thermal A2]]		[[index.php?title=Category:Equipment\|Thermal A2]]
	[[Category: Thermal process\|Furnace]]		[[index.php?title=Category:Thermal process\|Furnace]]
	[[Category: Furnaces\|A2]]		[[index.php?title=Category:Furnaces\|A2]]
	==Gate Oxide furnace (A2)==		==Gate Oxide furnace (A2)==
	[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]		[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']]

	The Gate Oxide furnace (A2) is a Tempress horizontal furnace for oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin thermal oxide located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).		The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).

	Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.		Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.

	This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk ~~contanination~~ (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.		This furnace is the second upper furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contamination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

Paphol: /* Gate Oxide furnace (A2) */

2023-01-31T09:27:00Z

Gate Oxide furnace (A2)

← Older revision		Revision as of 11:27, 31 January 2023
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	[[Category: Furnaces\|A2]]		[[Category: Furnaces\|A2]]
	==Gate Oxide furnace (A2)==		==Gate Oxide furnace (A2)==
	[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1]]		[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]

	The Gate Oxide furnace (A2) is a Tempress horizontal furnace for oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin thermal oxide located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).		The Gate Oxide furnace (A2) is a Tempress horizontal furnace for oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin thermal oxide located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).

Paphol at 09:26, 31 January 2023

2023-01-31T09:26:05Z

← Older revision		Revision as of 11:26, 31 January 2023
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	[[Category: Thermal process\|Furnace]]		[[Category: Thermal process\|Furnace]]
	[[Category: Furnaces\|A2]]		[[Category: Furnaces\|A2]]


	==Gate Oxide furnace (A2)==		==Gate Oxide furnace (A2)==
	[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1]]		[[Image:borpredep.jpg\|thumb\|300x300px\|Gate Oxide furnace (A2). Positioned in cleanroom B-1]]

Paphol at 09:13, 31 January 2023

2023-01-31T09:13:44Z

← Older revision		Revision as of 11:13, 31 January 2023
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	''This page is written by DTU Nanolab internal''		''This page is written by DTU Nanolab internal''

	[[Category: Equipment \|Thermal A2]]		[[Category: Equipment \|Thermal A2]]
	[[Category: Thermal process\|Furnace]]		[[Category: Thermal process\|Furnace]]

Paphol at 09:13, 31 January 2023

2023-01-31T09:13:33Z

← Older revision		Revision as of 11:13, 31 January 2023
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	'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace click here]'''		'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace click here]'''

			''This page is written by DTU Nanolab internal''

	[[Category: Equipment \|Thermal A2]]		[[Category: Equipment \|Thermal A2]]