Specific Process Knowledge/Lithography/nLOF - Revision history

Jehem at 11:26, 20 April 2026

2026-04-20T11:26:07Z

← Older revision		Revision as of 13:26, 20 April 2026
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	{{~~:Specific Process Knowledge/Lithography/authors_generic~~}}		{{cc-nanolab}}

	'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/nLOF click here]'''		'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/nLOF click here]'''

Taran: /* Post-exposure bake */

2025-04-09T08:13:13Z

Post-exposure bake

← Older revision		Revision as of 10:13, 9 April 2025
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	The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness.		The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness.


	===PEB baking time investigation===		===PEB baking time investigation===

Taran: /* Post-exposure bake */

2025-04-09T08:13:01Z

Post-exposure bake

← Older revision		Revision as of 10:13, 9 April 2025
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	*PEB temperature: 110°C		*PEB temperature: 110°C
	*PEB time: 60 s		*PEB time: 60 s


	The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness.		The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness.

Taran: /* Development */

2025-04-09T08:10:20Z

Development

← Older revision		Revision as of 10:10, 9 April 2025
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	Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A quick test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.		Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A quick test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.

	A small report on the ~~tests~~ can be found here: [[media:nLOF_solventdev_2024.pdf\|'''nLOF solvent development 2024''']].		A small report on the test can be found here: [[media:nLOF_solventdev_2024.pdf\|'''nLOF solvent development 2024''']].

Taran: /* Solvent development */

2025-04-09T07:59:01Z

Solvent development

← Older revision		Revision as of 09:59, 9 April 2025
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	===Solvent development===		===Solvent development===
	Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A ~~small~~ test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.		Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A quick test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.

	A small report on the tests can be found here: [[media:nLOF_solventdev_2024.pdf\|'''nLOF solvent development 2024''']].		A small report on the tests can be found here: [[media:nLOF_solventdev_2024.pdf\|'''nLOF solvent development 2024''']].

Taran at 07:58, 9 April 2025

2025-04-09T07:58:20Z

← Older revision		Revision as of 09:58, 9 April 2025
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	===Solvent development===		===Solvent development===
	Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A small test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.		Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A small test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.
	A small report on the tests can be found here:
			A small report on the tests can be found here: [[media:nLOF_solventdev_2024.pdf\|'''nLOF solvent development 2024''']].

Taran: /* Development */

2025-04-09T07:56:57Z

Development

← Older revision		Revision as of 09:56, 9 April 2025
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	*Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min		*Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min

			A 2 µm nLOF resist film is fully developed in ~30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut).

	A ~~2 µm~~ nLOF ~~resist film is fully developed in ~30 s in 2~~.~~38% TMAH (AZ 726 MIF). However,~~ the ~~development~~ can be ~~continued to 60 s in order to get a more negative resist profile (due to increased under-cut).~~		===Solvent development===
			Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A small test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.
			A small report on the tests can be found here:

Jehem: /* PEB baking time investigation */

2025-04-09T07:11:27Z

PEB baking time investigation

← Older revision		Revision as of 09:11, 9 April 2025
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	These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile).		These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile).

	A small report on the tests can be found here:~~<br>~~ [[media:nLOF_PEBtime_2019.pdf\|'''nLOF PEB time 2019''']].		A small report on the tests can be found here: [[media:nLOF_PEBtime_2019.pdf\|'''nLOF PEB time 2019''']].

	==Development==		==Development==

Jehem: /* PEB baking time investigation */

2025-04-09T07:11:12Z

PEB baking time investigation

← Older revision		Revision as of 09:11, 9 April 2025
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	These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile).		These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile).

	A small report on the tests can be found [[media:nLOF_PEBtime_2019.pdf\|'''~~here~~''']].		A small report on the tests can be found here:<br> [[media:nLOF_PEBtime_2019.pdf\|'''nLOF PEB time 2019''']].

	==Development==		==Development==

Jehem: /* PEB baking time investigation */

2025-04-09T07:10:10Z

PEB baking time investigation

← Older revision		Revision as of 09:10, 9 April 2025
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	==PEB baking time investigation==		===PEB baking time investigation===
	While 60 s @ 110°C is adequate for Si substrates, less thermally conductive substrates (glass, III-V materials, chips bonded to carrier), have shown problems using the standard PEB recipe.<br>		While 60 s @ 110°C is adequate for Si substrates, less thermally conductive substrates (glass, III-V materials, chips bonded to carrier), have shown problems using the standard PEB recipe.<br>
	These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile).		These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile).