Specific Process Knowledge/Lithography/UVExposure/aligner MLA3 - Revision history

Jehem: /* Aligner: Maskless 03 */

2026-01-13T11:54:32Z

Aligner: Maskless 03

← Older revision		Revision as of 13:54, 13 January 2026
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	==Aligner: Maskless 03==		=Aligner: Maskless 03=
	[[File:Aligner MLA 3.jpg\|400px\|thumb\|Aligner: Maskless 03 is located in E-5.]]		[[File:Aligner MLA 3.jpg\|400px\|thumb\|Aligner: Maskless 03 is located in E-5.]]
	MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.		MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.
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	Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=464 LabManager] - '''requires login'''		Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=464 LabManager] - '''requires login'''

	===Exposure dose and defocus===		==Exposure dose and defocus==
	[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_03\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_03\|Information on UV exposure dose]]

	===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing\|Process information]]===		==[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing\|Process information]]==
	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_technology\|Exposure technology]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_technology\|Exposure technology]]
	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Process_Parameters\|Process Parameters]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Process_Parameters\|Process Parameters]]
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	*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment\|Alignment]]		*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment\|Alignment]]

	===Quality Control (QC)===		==Quality Control (QC)==
	{\| border="1" cellspacing="2" cellpadding="2" colspan="3"		{\| border="1" cellspacing="2" cellpadding="2" colspan="3"
	\|bgcolor="#98FB98" \|'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Dose and Defoc'''		\|bgcolor="#98FB98" \|'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Dose and Defoc'''
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	<br/>		<br/>

	=== Equipment performance and process related parameters ===		==Equipment performance and process related parameters==

	{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"		{\|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

Jehem: /* Exposure dose and defocus */

2026-01-12T09:56:04Z

Exposure dose and defocus

← Older revision		Revision as of 11:56, 12 January 2026
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	===Exposure dose and defocus===		===Exposure dose and defocus===
	[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_03\|Information on UV exposure dose]]		[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_03\|Information on UV exposure dose]]

	===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing\|Process information]]===		===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing\|Process information]]===

Jehem: Created page with "==Aligner: Maskless 03== Aligner: Maskless 03 is located in E-5. MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020. '''Special features:''' Backside Alignment Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate *Separate conversion PC (Power PC) Link to information about alignment mark design. '''[http..."

2026-01-12T09:16:27Z

Created page with "==Aligner: Maskless 03== 400px|thumb|Aligner: Maskless 03 is located in E-5. MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020. '''Special features:''' *Backside Alignment *Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate *Separate conversion PC (Power PC) Link to information about alignment mark design. '''[http..."

New page

==Aligner: Maskless 03==
[[File:Aligner MLA 3.jpg|400px|thumb|Aligner: Maskless 03 is located in E-5.]]
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.

'''Special features:'''
*Backside Alignment
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*Separate conversion PC (Power PC)

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].

'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]'''

Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=464 LabManager] - '''requires login'''

===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_03|Information on UV exposure dose]]

===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment|Alignment]]

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=464 The QC procedure for Aligner: Maskless 03 (MLA3)] - '''requires login''' 
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=464 The newest QC data for Aligner: Maskless 03 (MLA3)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:300px"

! QC Recipe:
! Dose and defocus test on 1.5µm AZ5214E
|-
|Dose test
|Last QC value ± 20 mJ/cm2 (9 steps total)
|-
|Defoc test
|Last QC value ± 8 (9 steps total)
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 03 (MLA3)
|-
|Dose
|none
|-
|Defoc
|none
|-
|}
|-
|}
Dose and defoc values are reported in the QC data sheet.
|}
 
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=464 The QC procedure for Aligner: Maskless 03 (MLA3)] - '''requires login''' 
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=464 The newest QC data for Aligner: Maskless 03 (MLA3)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:300px"

! QC Recipe:
! Alignment accuracy test
|-
|Topside alignment
|Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.

Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
|-
|Backside alignment
|Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.

Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 03 (MLA3)
|-
|Topside alignment error
|>0.5µm
|-
|Backside alignment error
|>1µm
|-
|}
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
 

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"

!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
405nm (laser diode array)
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
Pneumatic
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1 µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment, ±0.5µm
*Backside alignment, ±1.0µm
*Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm2 area)

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 150x150 mm2
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm2
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
 Total height variation across the substrate must be less than ±90 µm - including wafer bow
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}